Defect Creation and Electron Trapping in Single Crystal and Sintered Alumina by Electron Beam Irradiation

1992 ◽  
Vol 279 ◽  
Author(s):  
D. L. Carroll ◽  
D. L. Doering ◽  
P. Xiong-Skiba
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Electron Beam Irradiation ◽  
Thermionic Emission ◽  
Charge Trapping ◽  
Binding Energies ◽  
Electron Trapping ◽  
Excess Charge ◽  
Beam Irradiation ◽  
Core Electron

ABSTRACTElectron beam irradiation of oxides produces electron trapping states which store excess charge. Thermionic emission of this charge occurs during heating with emission peak temperatures related to binding mechanisms and energies. We present thermionic emission results which show both intrinsic and beam induced trapping states in OC-Al2O3 (sapphire) and sintered alumina. Five states have been identified with thermionic emission peaks at temperatures between -50°C and 500°C. Two states are electron beam induced and occur only for electron beam energies above fixed thresholds. These thresholds appear to correlate to with the Is core electron binding energies for oxygen and aluminum. The emission peaks from the sintered material are about 10 fold greater in intensity and slightly broadened in comparison to the single crystal. This suggests that structure plays an important role in charge trapping. Emission was also extremely sensitive to sample treatments such as annealing before electron irradiation.

Defect Engineering and Characterization in Oxide Surfaces using Electron Beam Irradiation

1993 ◽  
Vol 316 ◽  
Author(s):  
D. L. Doering ◽  
K. H. Siek ◽  
P. Xiong-Skiba ◽  
D. L. Carroll
Keyword(s):  
Electron Beam ◽  
Electron Emission ◽  
Electron Beam Irradiation ◽  
Defect Formation ◽  
Ion Beam ◽  
Thermionic Emission ◽  
Binding Energies ◽  
Excess Charge ◽  
Beam Irradiation ◽  
Defect Creation

ABSTRACTElectron beam irradiation at energies between 0.5 and 4 keV has been found to produce defects in oxide materials including SiO2, Al2O3 and ZrO2. These defects trap excess charge in the materials and affect their electronic and optical properties. Measurements of the thermally stimulated exoelectron emission following irradiation provides information on relative defect concentrations, defect creation mechanisms, electron trap binding energies, electron emission mechanisms and annealing properties of these materials. Electron emission during sample heating occurs via a variety of mechanisms including the thermionic emission of excess charge from defects at temperatures characteristic of each trap binding energy. By measuring relative trap concentrations as a function of beam parameters, we have identified electron beam energy thresholds for the creation of some types of defects which correlate with core level electronic transitions. Also, electron emission which occurs during defect annealing or diffusion to a surface shows the conditions for the elimination of defects. The ability to control and characterize defect formation and annihilation provides the possibility of engineering specific surface defect conditions. In addition, defect creation by electronic processes is very selective as compared with momentum transfer in ion beam damage of surfaces.

Electron-beam irradiation alters bond strength in zinc oxide single crystal

2020 ◽  
Vol 116 (11) ◽  
pp. 111902
Author(s):  
Hiroyuki Hirakata ◽  
Kyohei Sano ◽  
Takahiro Shimada
Keyword(s):  
Zinc Oxide ◽  
Electron Beam ◽  
Bond Strength ◽  
Single Crystal ◽  
Electron Beam Irradiation ◽  
Beam Irradiation

Production of Ultrafine Single-Crystal Copper Wires through Electron Beam Irradiation of Cu-containing Zeolite X

2005 ◽  
Vol 631 (2-3) ◽  
pp. 443-447 ◽  
Author(s):  
Paul A. Anderson ◽  
Michael J. Edmondson ◽  
Peter P. Edwards ◽  
Ian Gameson ◽  
P. Jill Meadows ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Zeolite X ◽  
Single Crystal Copper

Quantitative estimation of electron beam irradiation damage of polyethylene single crystal using imaging plate

1992 ◽  
Vol 50 (1) ◽  
pp. 382-383
Author(s):  
T. Oikawa ◽  
D. Shindo ◽  
J. Kudoh ◽  
S. Aita ◽  
M. Kersker
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Electron Beam Irradiation ◽  
Quantitative Estimation ◽  
Irradiation Damage ◽  
Imaging Plate ◽  
Beam Irradiation ◽  
Polyethylene Single Crystal ◽  
Diffraction Patterns ◽  
Intensity Fading

The degree of electron beam irradiation damage is estimated from the intensity fading of diffraction spots and the lattice spacing increase of the specimen. Previously, qualitative estimatin of the damage was made for beam-sensitive specimens, e.g., polymers and biomolecules. In the present study, the degree of irradiation damage was estimated by quantitative measurement of the intensity of electron diffraction patterns, using the Imaging Plate (IP). Polyethylene single crystal, which is a typical material for polymers, was used as a specimen.

Generation of excess charge carriers in molecularly doped polymers by electron-beam irradiation

2008 ◽  
Vol 42 (1) ◽  
pp. 29-35 ◽  
Author(s):  
A. P. Tyutnev ◽  
V. S. Saenko ◽  
R. Sh. Ikhsanov ◽  
V. N. Abramov ◽  
E. D. Pozhidaev
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Charge Carriers ◽  
Excess Charge ◽  
Beam Irradiation ◽  
Doped Polymers
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