Production of Ultrafine Single-Crystal Copper Wires through Electron Beam Irradiation of Cu-containing Zeolite X

2005 ◽  
Vol 631 (2-3) ◽  
pp. 443-447 ◽  
Author(s):  
Paul A. Anderson ◽  
Michael J. Edmondson ◽  
Peter P. Edwards ◽  
Ian Gameson ◽  
P. Jill Meadows ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Zeolite X ◽  
Single Crystal Copper

Electron-beam irradiation alters bond strength in zinc oxide single crystal

2020 ◽  
Vol 116 (11) ◽  
pp. 111902
Author(s):  
Hiroyuki Hirakata ◽  
Kyohei Sano ◽  
Takahiro Shimada
Keyword(s):  
Zinc Oxide ◽  
Electron Beam ◽  
Bond Strength ◽  
Single Crystal ◽  
Electron Beam Irradiation ◽  
Beam Irradiation

Defect Creation and Electron Trapping in Single Crystal and Sintered Alumina by Electron Beam Irradiation

1992 ◽  
Vol 279 ◽  
Author(s):  
D. L. Carroll ◽  
D. L. Doering ◽  
P. Xiong-Skiba
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Electron Beam Irradiation ◽  
Thermionic Emission ◽  
Charge Trapping ◽  
Binding Energies ◽  
Electron Trapping ◽  
Excess Charge ◽  
Beam Irradiation ◽  
Core Electron

ABSTRACTElectron beam irradiation of oxides produces electron trapping states which store excess charge. Thermionic emission of this charge occurs during heating with emission peak temperatures related to binding mechanisms and energies. We present thermionic emission results which show both intrinsic and beam induced trapping states in OC-Al2O3 (sapphire) and sintered alumina. Five states have been identified with thermionic emission peaks at temperatures between -50°C and 500°C. Two states are electron beam induced and occur only for electron beam energies above fixed thresholds. These thresholds appear to correlate to with the Is core electron binding energies for oxygen and aluminum. The emission peaks from the sintered material are about 10 fold greater in intensity and slightly broadened in comparison to the single crystal. This suggests that structure plays an important role in charge trapping. Emission was also extremely sensitive to sample treatments such as annealing before electron irradiation.

Quantitative estimation of electron beam irradiation damage of polyethylene single crystal using imaging plate

1992 ◽  
Vol 50 (1) ◽  
pp. 382-383
Author(s):  
T. Oikawa ◽  
D. Shindo ◽  
J. Kudoh ◽  
S. Aita ◽  
M. Kersker
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Electron Beam Irradiation ◽  
Quantitative Estimation ◽  
Irradiation Damage ◽  
Imaging Plate ◽  
Beam Irradiation ◽  
Polyethylene Single Crystal ◽  
Diffraction Patterns ◽  
Intensity Fading

The degree of electron beam irradiation damage is estimated from the intensity fading of diffraction spots and the lattice spacing increase of the specimen. Previously, qualitative estimatin of the damage was made for beam-sensitive specimens, e.g., polymers and biomolecules. In the present study, the degree of irradiation damage was estimated by quantitative measurement of the intensity of electron diffraction patterns, using the Imaging Plate (IP). Polyethylene single crystal, which is a typical material for polymers, was used as a specimen.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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