Synthesis of Critical Point Energies for 1 MeV Electron Irradiated P-Type Silicon

1992 ◽  
Vol 279 ◽  
Author(s):  
Onofrio L. Russo ◽  
Katherine A. Dumas ◽  
Michael H. Herman
Keyword(s):  
Electron Beam ◽  
Critical Point ◽  
Low Energy ◽  
Main Structure ◽  
Line Shapes ◽  
Type Silicon ◽  
Boron Doped ◽  
Composite Spectra ◽  
Lorentz Line ◽  
P Type

ABSTRACTThe critical point energies, E0, E1 and the Lorentz broadening parameter, Γ, for boron doped p-type silicon were obtained by electrolyte-electroreflectance (EER) at 297K and electron beam electroreflectance (EBER) at 297K and 88K. Electron irradiated samples for fluences of 1014 and 1016 e-/cm2 were compared to the samples before irradiation. The value of the low energy weaker structure, Eo and the higher energy main structure, Ei are obtained by the synthesis of two Lorentz line shapes to fit the experimentally obtained composite spectra. The values as determined by EER were all found to increase with radiation as expected. The values for Eo as found by EBER were consistent with those of EER but those of E1 were not.

Effects of Electron Radiation on the Optical Constants of P-Type Silicon

1993 ◽  
Vol 302 ◽  
Author(s):  
Onofrio L. Russo ◽  
Katherine A. Dumas
Keyword(s):  
Critical Point ◽  
Spectroscopic Ellipsometry ◽  
Critical Points ◽  
Line Shape ◽  
Optical Constants ◽  
Electron Radiation ◽  
Main Structure ◽  
Type Silicon ◽  
Lorentz Line ◽  
P Type

ABSTRACTThe optical constants n and k are determined for p-type silicon at the Eo and El and critical point energies for one MeV electron irradiated samples. The value for fluences of 1014 and 1016 e−/cm2 are compared to samples before irradiation. The real, ε1 and imaginary,ε2 components of the dielectric function, ε, used to find n and k, were obtained by measurement of tanψ and δ using spectroscopic ellipsometry (SE). The data show that changes in δ, in particular, are greater in the region about Eo than of E1. This is consistent with electrolyte electroreflectance (EER) results in which the Lorentz line shape is narrower for Eo than for E1. The value of n is found to increase and k to decrease with e- radiation at the critical points, although, neither does so monotonically. The change in n at the Eo critical point is greater than at the higher energy main structure E1 whereas, k is a slower varying function in this region.

On the recombination behaviour of iron in moderately boron-doped p-type silicon

1996 ◽  
Vol 62 (4) ◽  
pp. 345-353 ◽  
Author(s):  
D. Walz ◽  
J.-P. Joly ◽  
G. Kamarinos
Keyword(s):  
Type Silicon ◽  
Boron Doped ◽  
P Type

A phosphorous doped (n-type) carbon/boron doped (p-type) silicon photovoltaic solar cell from a natural source

Carbon ◽  
1999 ◽  
Vol 37 (3) ◽  
pp. 531-533 ◽  
Author(s):  
Kalaga Murali Krishna ◽  
Tetsuo Soga ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Solar Cell ◽  
Natural Source ◽  
Photovoltaic Solar Cell ◽  
Type Silicon ◽  
Boron Doped ◽  
P Type

Introduction of Electrical Defects in P-Type Silicon due to Electron-Beam and RF Sputtering Metallization Processes

1983 ◽  
Vol 25 ◽  
Author(s):  
O. Paz ◽  
F. D. Auret
Keyword(s):  
Electron Beam ◽  
Deep Level ◽  
Rf Sputtering ◽  
Electron Beam Evaporation ◽  
Defect States ◽  
Type Silicon ◽  
Carrier Recombination ◽  
Electron Beam Induced Current ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTDefects introduced in p-type silicon during RF sputter deposition of Ti-W and electron-beam evaporation of hafnium were investigated using I-V, deep level transient spectroscopy and electron-beam induced current techniques. DLTS measurements indicate the presence of several deposition and evaporation induced defect states. H(0.35) at EV + .35 eV and H(0.38) were the most prominent defects. Minority carrier diffusion length results taken after annealing showed that in the case of the Hf contacts the damage was annealed out while in the case of Ti-W it was not. These differences in carrier recombination are traced to the concentration of H(0.35). Sputtering or evaporation induced damage also increased the barrier height. This observed increase was modeled assuming the introduction of donor-like defects.

Sign in / Sign up

Export Citation Format

Share Document