On the recombination behaviour of iron in moderately boron-doped p-type silicon

1996 ◽  
Vol 62 (4) ◽  
pp. 345-353 ◽  
Author(s):  
D. Walz ◽  
J.-P. Joly ◽  
G. Kamarinos
Keyword(s):  
Type Silicon ◽  
Boron Doped ◽  
P Type

A phosphorous doped (n-type) carbon/boron doped (p-type) silicon photovoltaic solar cell from a natural source

Carbon ◽  
1999 ◽  
Vol 37 (3) ◽  
pp. 531-533 ◽  
Author(s):  
Kalaga Murali Krishna ◽  
Tetsuo Soga ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Solar Cell ◽  
Natural Source ◽  
Photovoltaic Solar Cell ◽  
Type Silicon ◽  
Boron Doped ◽  
P Type

On the recombination behaviour of iron in moderately boron-doped p-type silicon

1996 ◽  
Vol 62 (4) ◽  
pp. 345-353 ◽  
Author(s):  
D. Walz ◽  
J. -P. My ◽  
G. Kamarinos
Keyword(s):  
Type Silicon ◽  
Boron Doped ◽  
P Type

scholarly journals Hydrogen-related defects in boron doped p-type silicon

2010 ◽  
Vol 8 (3) ◽  
pp. 705-708 ◽  
Author(s):  
H. Malmbekk ◽  
L. Vines ◽  
E. V. Monakhov ◽  
B. G. Svensson
Keyword(s):  
Type Silicon ◽  
Boron Doped ◽  
P Type

Synthesis of Critical Point Energies for 1 MeV Electron Irradiated P-Type Silicon

1992 ◽  
Vol 279 ◽  
Author(s):  
Onofrio L. Russo ◽  
Katherine A. Dumas ◽  
Michael H. Herman
Keyword(s):  
Electron Beam ◽  
Critical Point ◽  
Low Energy ◽  
Main Structure ◽  
Line Shapes ◽  
Type Silicon ◽  
Boron Doped ◽  
Composite Spectra ◽  
Lorentz Line ◽  
P Type

ABSTRACTThe critical point energies, E0, E1 and the Lorentz broadening parameter, Γ, for boron doped p-type silicon were obtained by electrolyte-electroreflectance (EER) at 297K and electron beam electroreflectance (EBER) at 297K and 88K. Electron irradiated samples for fluences of 1014 and 1016 e-/cm2 were compared to the samples before irradiation. The value of the low energy weaker structure, Eo and the higher energy main structure, Ei are obtained by the synthesis of two Lorentz line shapes to fit the experimentally obtained composite spectra. The values as determined by EER were all found to increase with radiation as expected. The values for Eo as found by EBER were consistent with those of EER but those of E1 were not.

Growth and Nitridation of Silicon-Dioxide Films on Silicon-Carbide

1997 ◽  
Vol 470 ◽  
Author(s):  
Denis Sweatman ◽  
Sima Dimitrijev ◽  
Hui-Feng Li ◽  
Philip Tanner ◽  
H. Barry Harrison
Keyword(s):  
Silicon Carbide ◽  
Silicon Dioxide ◽  
Wide Bandgap ◽  
Device Fabrication ◽  
Nitrogen Doped ◽  
Wide Bandgap Semiconductor ◽  
Type Silicon ◽  
Boron Doped ◽  
P Type ◽  
Mos Device

ABSTRACTSilicon-carbide offers great potential as a wide bandgap semiconductor for electronic applications. A good quality oxide dielectric will allow MOS device fabrication and in particular N-channel mosfets for their higher electron mobility. To date oxides on N-type silicon-carbide (nitrogen doped) have exhibited excellent characteristics while on P-type (aluminium or boron doped) the characteristics are poor. This paper presents results for the oxidation and subsequent nitridation of N and P-type silicon-carbide. It illustrates the role that nitrogen at the interface has in improving the trap densities and that nitric oxide provides the nitrogen well. Nitrous oxide, previously used to nitride silicon dioxide on silicon, is shown to substantially deteriorate the interface density of states for both N and P-type substrates.

scholarly journals Boron Doped SiOx Dielectrics for Bifacial n-type and p-type Silicon Solar Cells

2015 ◽  
Vol 77 ◽  
pp. 470-477 ◽  
Author(s):  
Prabal Goyal ◽  
Elias Urrejola ◽  
Junegie Hong ◽  
Alain Madec
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Type Silicon ◽  
Boron Doped ◽  
P Type

Interaction between hydrogen and the Fe-B pair in boron-doped p-type silicon

2011 ◽  
Vol 99 (5) ◽  
pp. 052106 ◽  
Author(s):  
C. K. Tang ◽  
L. Vines ◽  
B. G. Svensson ◽  
E. V. Monakhov
Keyword(s):  
Type Silicon ◽  
Boron Doped ◽  
P Type
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