Temperature and Frequency Dependence of the Infrared Absorption in Three Kinds of Bi-Based Compounds

1992 ◽  
Vol 275 ◽  
Author(s):  
Y. Hayashi ◽  
Y. Harada ◽  
H. Sasakura ◽  
M. Nagayama
Keyword(s):  
Absorption Band ◽  
Infrared Absorption ◽  
Far Infrared ◽  
Infrared Region ◽  
Free Carrier Absorption ◽  
Phonon Modes ◽  
Superconducting Compounds ◽  
Carrier Absorption ◽  
Absorption Measurements ◽  
Made In

ABSTRACTInfrared absorption measurements have been made in three kinds of Bi compounds of a high-Tc family mainly by making use of powdered samples. Two of them are superconductors with Tc's of 108 K and 82 K, respectively, and the remaining one is a semiconductor. In each of the superconducting compounds, there appears Mid-Infrared absorption band: No such absorption band is found in the semiconducting compound. At Far-Infrared region, many absorption peaks due to phonons are clearly detected in all of these samples. Some of the phonon modes have been identified. At very low energy region, free carrier absorption appears in superconductors. Only this part of the absorption shows a temperature dependence. Absorption intensity decreases as the temperature decreases.

scholarly journals Measurement of Far-Infrared Absorption for Amorphous Silicates between 27 and 400 μm

1991 ◽  
Vol 126 ◽  
pp. 121-124
Author(s):  
Chiyoe Koike ◽  
Hiroshi Shibai
Keyword(s):  
Absorption Band ◽  
Infrared Absorption ◽  
Far Infrared ◽  
Infrared Region ◽  
Infrared Extinction

AbstractThe far-infrared extinction of various silicates was measured in the 27 - 400 μm range of wavelength. The SiO2content of our samples distributes between 45 and 100 weight (wt.)%. There is no distinct absorption band in the far-infrared region and the extinction decreases in proportion toλ−1.4.

Free Carrier Absorption in P-Type Epitaxial Si and GaAs Films for far-Infrared Detection

1997 ◽  
Vol 484 ◽  
Author(s):  
A. O. U. Perera ◽  
W. Z. Shen ◽  
M. O. Tanner ◽  
K. L. Wang ◽  
W. Schaff
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Far Infrared ◽  
Infrared Region ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Absorption Data ◽  
Carrier Absorption ◽  
P Type

AbstractWe report the investigation of free-carrier absorption characteristics for epitaxially grown p-type thin films in the far-infrared region (50 ∼ 200 μm), where homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si and three GaAs thin films were grown by MBE over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The freehole absorption is found to be almost independent of the wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors. The detector responsivity follows the quantum efficiency predicted by concentration dependence of the free carrier absorption coefficient.

High-pressure far-infrared absorption measurements on La1−xCaxMnO3−δ by means of synchrotron radiation

2006 ◽  
Vol 49 (1-2) ◽  
pp. 92-95
Author(s):  
A. Sacchetti ◽  
M. Cestelli Guidi ◽  
E. Arcangeletti ◽  
P. Postorino ◽  
A. Nucara ◽  
...  
Keyword(s):  
High Pressure ◽  
Synchrotron Radiation ◽  
Infrared Absorption ◽  
Far Infrared ◽  
Absorption Measurements

Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications

2001 ◽  
Vol 89 (6) ◽  
pp. 3295-3300 ◽  
Author(s):  
A. L. Korotkov ◽  
A. G. U. Perera ◽  
W. Z. Shen ◽  
J. Herfort ◽  
K. H. Ploog ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Far Infrared ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption

Far-Infrared Absorption Measurements of Polypeptides and Cytochromecby THz Radiation

2002 ◽  
Vol 75 (5) ◽  
pp. 1083-1092 ◽  
Author(s):  
Kohji Yamamoto ◽  
Keisuke Tominaga ◽  
Hiroaki Sasakawa ◽  
Atsuo Tamura ◽  
Hidetoshi Murakami ◽  
...  
Keyword(s):  
Infrared Absorption ◽  
Far Infrared ◽  
Thz Radiation ◽  
Absorption Measurements

Far-Infrared Absorption in Bulk Samples of Superconducting d-h.c.p. Lanthanum

1972 ◽  
Vol 50 (20) ◽  
pp. 2549-2551
Author(s):  
L. W. Kry ◽  
D. Hemming
Keyword(s):  
Infrared Absorption ◽  
Far Infrared ◽  
A Value ◽  
Gap Width ◽  
Absorption Measurements

Far-infrared absorption measurements have been made on bulk samples of d-h.c.p. lanthanum and the results indicate a gap width, 2Δ, of 11.6 ± 0.3 cm−1 or 1.44 ± 0.04 meV. Using a value of Tc = 4.87 ± 0.02 °K, taken from the literature, this gives 2Δ = (3.43 ± 0.09)kTc.

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