Microstructures at the Interface Between a-Axis Oriented YBa2Cu3O7−x and NdGaO3(110) Substrate

1992 ◽  
Vol 275 ◽  
Author(s):  
Hiromi Takahashi ◽  
Norio Homma ◽  
Satoru Okayama ◽  
Tadataka Morishita
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Tensile Stress ◽  
Cross Section ◽  
Lattice Mismatch ◽  
The Other ◽  
Oriented Film ◽  
Transmission Electron ◽  
Small Lattice ◽  
Orientational Relationship

ABSTRACTThe interface between an a-axis oriented YBa2Cu3O7-x film and a NdGaO3(110) substrate has been investigated by cross-section transmission electron microscopy (TEM). The orientational relationship between the a-axis oriented film and substrate is YBa2Cu3O7-x[001] / NdGaO3[001]. This preferentially c-axis aligned direction of the YBa2Cu3O7-x film would be caused by a very small lattice mismatch (0.1%) between b(=a) lattice constant of YBa2Cu3O7-x and of the pseudo-cubic sub-lattices in NdGaO3 at a substrate temperature of 750°C. Two kinds of imperfections have been observed in the crystal lattice of YBa2Cu3O7-x near the interface; One is the deviation of YBa2Cu3O7-x [301] from NdGaO3 [111]. The other type is pair dislocations with a positive and negative Burgers vectors in the YBa2Cu3O7-x (103) planes. These two kinds of defects at the interface would be act to reduce the tensile stress within a distance of about l.lnm from the substrate interface.

Epitaxial Growth of BaF2 on Semiconductor Substrates

1982 ◽  
Vol 18 ◽  
Author(s):  
J. M. Phillips ◽  
L. C. Feldman ◽  
J. M. Gibson ◽  
M. L. Mcdonald
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
The Other ◽  
Misfit Dislocations ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Semiconductor Substrates

We used Rutherford backscattering and channeling and transmission electron microscopy (TEM) to study the epitaxial growth of BaF2 vacuum deposited onto InP(100), InP(111), Ge(100) and Ge(111). We observed no epitaxy in BaF2 on Ge(100). The other three cases all show epitaxy, with quality ranging from poor for BaF2 on InP(111) through fair for BaF2 on InP(100) to excellent for BaF2 on Ge(111). Epitaxial quality depends strongly on substrate temperature for BaF2 on Ge(l11). TEM analysis indicates that there are neither misfit dislocations nor coherence at the BaF2–Ge(111) interface in spite of the 9.1% lattice mismatch.

scholarly journals Amorphization and the Effect of Implanted Ions in Sic

1994 ◽  
Vol 373 ◽  
Author(s):  
L. L. Snead ◽  
S. J. Zinkle
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Volume Change ◽  
Room Temperature ◽  
Threshold Dose ◽  
The Other ◽  
Ion Chemistry ◽  
Transmission Electron ◽  
Ion Species

AbstractThe effects of implanted ion chemistry and displacement damage on the amorphization threshold dose of SiC were studied using cross-section transmission electron microscopy. Room temperature as well as 200 and 400°C irradiations were carried out with 3.6 MeV Fe, 1.8 MeV Cl, 1 MeV He or 0.56 MeV Si ions. The room temperature amorphization threshold dose in irradiated regions well separated from the implanted ions was found to range from 0.3 to 0.5 dpa for the four different ion species. The threshold dose for amorphization in the He, Si and Fe ion-implanted regions was also σ0.3 to 0.5 dpa. On the other hand, the amorphization threshold in the Climplanted region was only about 0.1 dpa. The volume change associated with amorphization was σ17&. No evidence for amorphization was obtained in specimens irradiated at 200 or 400°C.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

The use of an energy-filtering electron microscope to reduce chromatic aberration in images of thick biological specimens

1986 ◽  
Vol 44 ◽  
pp. 88-91
Author(s):  
L. D. Peachey ◽  
J. P. Heath ◽  
G. Lamprecht
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Cross Section ◽  
Electron Scattering ◽  
Chromatic Aberration ◽  
Image Resolution ◽  
Incident Electron Energy ◽  
Energy Filtering ◽  
Transmission Electron

Biological specimens of cells and tissues generally are considerably thicker than ideal for high resolution transmission electron microscopy. Actual image resolution achieved is limited by chromatic aberration in the image forming electron lenses combined with significant energy loss in the electron beam due to inelastic scattering in the specimen. Increased accelerating voltages (HVEM, IVEM) have been used to reduce the adverse effects of chromatic aberration by decreasing the electron scattering cross-section of the elements in the specimen and by increasing the incident electron energy.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Microstructure of SrTiO3 Thin Films as Single Layer and Incorporated in Yba2Cu3O7-x/SrTiO3 Multilayers

1995 ◽  
Vol 401 ◽  
Author(s):  
L. Ryen ◽  
E. Olssoni ◽  
L. D. Madsen ◽  
C. N. L. Johnson ◽  
X. Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Lattice Mismatch ◽  
Single Layer ◽  
Transmission Electron ◽  
Tilt Boundaries ◽  
Interfacial Dislocations ◽  
The Individual ◽  
Film Substrate

AbstractEpitaxial single layer (001) SrTiO3 films and an epitaxial Yba2Cu3O7-x/SrTiO3 multilayer were dc and rf sputtered on (110)rhombohedral LaAIO3 substrates. The microstructure of the films was characterised using transmission electron microscopy. The single layer SrTiO3 films exhibited different columnar morphologies. The column boundaries were due to the lattice mismatch between film and substrate. The boundaries were associated with interfacial dislocations at the film/substrate interface, where the dislocations relaxed the strain in the a, b plane. The columns consisted of individual subgrains. These subgrains were misoriented with respect to each other, with different in-plane orientations and different tilts of the (001) planes. The subgrain boundaries were antiphase or tilt boundaries.The individual layers of the Yba2Cu3O7-x/SrTiO3 multilayer were relatively uniform. A distortion of the SrTiO3 unit cell of 0.9% in the ‘001’ direction and a Sr/Ti ratio of 0.62±0.04 was observed, both in correspondence with the single layer SrTiO3 films. Areas with different tilt of the (001)-planes were also present, within each individual SrTiO3 layer.

Asymmetric Cracking in Znse/ZnSxSel−x Superlattices Grown by Molecular Bean Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
Richard J. Dalby ◽  
John Petruzzello
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Expansion ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Sulfur Concentration ◽  
Transmission Electron ◽  
Theoretical Predictions ◽  
Superlattice Layer

ABSTRACTOptical and transmission electron microscopy have been used to study cracks appearing in ZnSe/ZnSxSe1−x (x ∼ 0.38) superlattices grown by Molecular Beam Epitaxy. It Is shown that when a fracture occurs it is confined, in most cases, to the superlattice and propagates along <011> cleavage directions in these <001> oriented epilayers. Cracks were not observed in all superlattices and their onset is discussed in relation to sulfur concentration, overall superlattice height, individual superlattice layer thicknesses, and stress, tensile or compressive, due to lattice mismatch and thermal expansion differences between buffer layer and superlattice. It was found that by adjusting the controllable parameters, cracks in the superlattices could be eliminated. Orientation and density of these features have been related to asynnmetric cracking associated with the zincblende structure of these II-VI materials. Experimental results are shown to be in agreement with theoretical predictions of critical heights for the onset of cracking.

TEM Study of strain states in III-V semiconductor epitaxial layers.

2001 ◽  
Vol 673 ◽  
Author(s):  
André ROCHER ◽  
Anne PONCHET ◽  
Stéphanie BLANC ◽  
Chantal FONTAINE
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Lattice Mismatch ◽  
Thick Layer ◽  
Misfit Strain ◽  
Gasb Layer ◽  
Transmission Electron ◽  
Moiré Fringes ◽  
Square Array ◽  
Plane View

ABSTRACTThe strain states induced by a lattice mismatch in epitaxial systems have been studied by Transmission Electron Microscopy (TEM) using the moiré fringe technique on plane view samples. For the GaSb/(001)GaAs system, moiré patterns suggest that the GaSb layer is free of stress and homogeneously relaxed by a perfect square array of Lomer dislocations. A 10 nm thick layer of GaInAs (20% In concentration) grown on (001)GaAs does not give any moiré fringes for all low-index Bragg reflections: this result indicates that the effective misfit strain does not correspond to the theoretical one described by the elastic theory. Segregation effects are expected to play an important role in the relaxation of the misfit strain.

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