Electronic Structure of Pd doped InP

1992 ◽  
Vol 272 ◽  
Author(s):  
P. K. Khowash
Keyword(s):  
Electronic Structure ◽  
Density Of States ◽  
Cluster Model ◽  
Local Density ◽  
Energy Spectra ◽  
Valence Band Edge ◽  
Metal Impurities ◽  
Structure Of Metal ◽  
Self Consistent ◽  
Small Magnetic Moment

ABSTRACTThe electronic structure of metal impurities in III-V semiconductors are interesting because of their ability to create deep centers. We use a spin unrestricted self-consistent local density theory in a cluster model to calculate the charge distributions, one electron energy spectra and the density of states for pure InP and Pd doped InP, substituted at the In site. The pure semiconductor gap is calculated to be 1.44 eV in excellent agreement with the experimental value of 1.41 eV. A small magnetic moment of 0.561μB appears on the Pd site. The impurity introduces a levels of t2 character at 0.01 and 0.04 eV above the valence band edge.

Electronic Structure vs Phase in Al3V

1988 ◽  
Vol 141 ◽  
Author(s):  
J.-H. Xu
Keyword(s):  
Electronic Structure ◽  
Bulk Modulus ◽  
Total Energy ◽  
Crystal Structures ◽  
Lattice Constant ◽  
Density Of States ◽  
Phase Stability ◽  
Local Density ◽  
Young Modulus ◽  
Good Agreement

AbstractThe electronic structure of Al3V vs its two different crystal structures (DO22 and Ll2) were investigated using local density total energy approach. The calculated results of the total energy showed that in Al3V the tetragonal DO22 phase is energetically favored as compared to the cubic Ll2 phase, the total energy in the former case is about 60 mRy/F.U. lower than that in the later case. The calculated lattice constant (a=3.72 Å, c=8.20 Å) is in fairly good agreement with experiment (a=3.778 Å, c=8.326 Å),and the bulk modulus (1.3 Mbar) is comparable with the experimental Young modulus (150 GPa) for Al3Ti. Furthermore, it is interesting to note that the density of states at EF in the tetragonal DO22 phase (0.14 states/eV-F.U.) is about one order magnitude smaller than that in the Ll2 phase (2.89 states/eV-F.U.). The electronic structure of Al3V seems to be fairly satisfactory in explaining its phase stability.

First-principles Study of the Electronic Structure and Local Moment Interactions in PuAm Alloy

2008 ◽  
Vol 1104 ◽  
Author(s):  
Myung Joon Han ◽  
Xiangang Wan ◽  
Sergej Y Savrasov
Keyword(s):  
Electronic Structure ◽  
First Principles ◽  
Local Density ◽  
Exchange Interactions ◽  
Kondo Lattice ◽  
First Principles Calculations ◽  
Correlation Effects ◽  
Self Consistent ◽  
5F Electrons ◽  
Zero Moment

AbstractExpected to provide a clue about the origin of zero moment in the bulk phase of Plutonium, Pu1-xAmx alloys have attracted a great attention, in which upon doping the system transforms from the Kondo lattice to the diluted impurity limit. To understand the electronic structure and the magnetic properties of Pu in different crystal environments, we performed fully self-consistent first-principles calculations of the PuAm system based on the local density approximation (LDA) combined with static (LDA+U) and dynamic corrections (LDA+DMFT) for on-site electron correlations. The electronic structure strongly depends on the level of approximation for correlation effects. The exchange interactions between Pu 5f electrons and the Kondo screening strength were estimated and compared, which provide a new insight to Pu magnetism.

Electronic Structure Calculations of Pure and Oxidized Copper Clusters Using Jellium and MO - LCAO Models

1994 ◽  
Vol 351 ◽  
Author(s):  
Henrik Gronbeck ◽  
Mats Andersson ◽  
Arne Rosen
Keyword(s):  
Electronic Structure ◽  
Molecular Oxygen ◽  
Local Density ◽  
Electronic Structure Calculations ◽  
Jellium Model ◽  
Copper Clusters ◽  
Self Consistent ◽  
Structure Calculations

ABSTRACTA self consistent jellium approach to the chemisorption of molecular oxygen on copper clusters is investigated and compared with local density MO - LCAO calculations. The jellium model is found to be well suited for chemisorption studies and the results explain the main trends in the measured chemisorption properties of O2 on copper clusters.

Electronic Properties of Diamond/Nickel and Diamond/Boron Nitride Interfaces

1989 ◽  
Vol 162 ◽  
Author(s):  
Warren E. Pickett ◽  
Steven C. Erwin
Keyword(s):  
Electronic Structure ◽  
Boron Nitride ◽  
Density Functional ◽  
Schottky Barrier Height ◽  
Local Density ◽  
Self Consistent ◽  
Small Lattice ◽  
Local Density Functional ◽  
Structure And Bonding ◽  
Bonding Characteristics

ABSTRACTWe present self-consistent local density functional calculations of the electronic structure and bonding characteristics of an ideal diamond/Ni (001) interface and an unrelaxed diamond/BN (110) interface. At this stage the small lattice mismatches are not taken into account. Results include predictions of the band line-ups across the interfaces: the Schottky barrier height in the former case and the valence and conduction band discontinuities in the latter case.

The Mechanism of Slow Component Suppression in Lanthanum Doped Barium Fluoride Crystal

1994 ◽  
Vol 348 ◽  
Author(s):  
Gu Mu ◽  
Chen Lingyan ◽  
Li Qing ◽  
Wang Liming ◽  
Xiang Kaihua
Keyword(s):  
Electronic Structures ◽  
Cluster Model ◽  
Local Density ◽  
Slow Component ◽  
Barium Fluoride ◽  
Molecular Cluster ◽  
Entire System ◽  
Scintillation Light ◽  
Hartree Fock ◽  
Self Consistent

ABSTRACTThe electronic structures of pure BaF2 crystal and lanthanum doped BaF2 crystal have been calculated in a self-consistent molecular-cluster model. The cluster is embedded in the crystal lattice and the entire system treatediteratively in the Hartree-Fock-Slater local-density theory. As lanthanum doped BaF2 is concerned, the obtained results revealed that the F1–i which is introduced by the lanthanum may contribute to the suppression ofthe slow component in the scintillation light of BaF2 crystal.

Calculations of the Electronic Structure of Vacancies in a-Si:H

1992 ◽  
Vol 291 ◽  
Author(s):  
Ariel A. Valladares ◽  
L. Enrique Sansores
Keyword(s):  
Electronic Structure ◽  
Charge Density ◽  
Density Of States ◽  
Energy Gap ◽  
Local Density ◽  
Amorphous Solids ◽  
Local Density Of States ◽  
Hydrogen Atoms ◽  
Hartree Fock ◽  
Cluster Calculations

ABSTRACTThe electronic structure of random clusters has been used in the literature as representative of the electronic structure of random solids. In this work a calculation of the local density of states (LDOS) and charge density contours for clusters of the type XSi20H28 with X an Si atom, a vacancy or 4 hydrogen atoms, has been carried out. The method used was a pseudopotential SCF Hartree-Fock and the HONDO program. It is found that the generation of a vacancy in the center of the cluster (removal of the central Si atom), introduces p-like states in the energy gap of the LDOS for the region near the center of the cluster. The saturation of the dangling bonds of the vacancy with 4 hydrogen atoms removes the states within the gap. These results are also borne out by the charge density contours, thereby reinforcing the importance of amorphous cluster calculations in the understanding of the electronic structure of amorphous solids.

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