Synthesis of Cupric Oxide Films using Mass-Separated Low-Energy O+ Beams

1992 ◽  
Vol 268 ◽  
Author(s):  
R. Kita ◽  
T. Hase ◽  
R. Itti ◽  
M. Sasaki ◽  
T. Morishita
Keyword(s):  
Flux Density ◽  
Room Temperature ◽  
Oxygen Plasma ◽  
Cupric Oxide ◽  
Ambient Pressure ◽  
Ion Beams ◽  
Low Energy ◽  
Epitaxial Relationship ◽  
Order Of Magnitude ◽  
Relationship Of

ABSTRACTWe report the epitaxial growth of CuO thin films prepared by lowenergy and high-density O+ ion beams mass-separated from an oxygen plasma. We have successfully produced O+ beams of 50 μA/cm2 while maintaining an ambient pressure of 3×10−9 Torr during the growth. CuO grows on MgO(100) with epitaxial relationship of (111)CuO // (100)MgO and [110]CuO // [110]MgO at room temperature and even under conditions where the flux density of O+ beams is at least one order of magnitude lower than the minimum flux density of O2 required to form CuO.

Isotopic quantum effects in the structure of liquid ethanol

2002 ◽  
Vol 80 (9) ◽  
pp. 1059-1068 ◽  
Author(s):  
B Tomberli ◽  
C J Benmore ◽  
J Neuefeind ◽  
P A Egelstaff
Keyword(s):  
Room Temperature ◽  
Gamma Ray ◽  
Ambient Pressure ◽  
High Energy ◽  
Radiation Scattering ◽  
Structure Factors ◽  
Structural Differences ◽  
Order Of Magnitude ◽  
Total Structure Factor ◽  
Total Structure

High-energy electromagnetic-radiation-scattering techniques have been used to measure the structural differences between five isotopic samples of ethanol (CH3CH2OH, CD3CD2OD, CD3CH2OH, CH3CH2OD, and CH3CD2OH) at room temperature and ambient pressure. The differences in the X-ray structure factors between several pairs of isotopes, ΔSX(Q), are shown to have maximum amplitudes that are on the order of a few percent compared to the total structure factor for CH3CH2OH. Our uncertainties are an order of magnitude smaller than those of early gamma-ray measurements on methanol (C.J. Benmore and P.A. Egelstaff. J. Phys. Condens. Matter, 8, 9429 (1996)). These studies have shown that isotopic structural differences in room-temperature ethanol vary as a function of substitution site and are in qualitative agreement with similar differences found in liquid methanol. PACS Nos.: 61.20-p, 61.25E, 61.10-E

scholarly journals SURFACE MORPHOLOGY AND SPUTTERING OF FeCrAl COATING ON STEEL EXPOSED TO LOW-ENERGY DEUTERIUM PLASMAS

2019 ◽  
pp. 190-194
Author(s):  
V.N. Voyevodin ◽  
G.D. Tolstolutskaya ◽  
A.V. Nikitin ◽  
R.L. Vasilenko ◽  
A.S. Kuprin ◽  
...  
Keyword(s):  
Pure Iron ◽  
Room Temperature ◽  
Nitrogen Atmosphere ◽  
Low Energy ◽  
Vacuum Arc ◽  
Published Data ◽  
Deuterium Plasma ◽  
X Ray ◽  
Order Of Magnitude ◽  
Sputtering Yields

Processes of sputtering and surface modification of FeCrAl coatings deposited on steel by vacuum arc was studied under the influence of low-energy (500 eV) deuterium plasma with fluence (4⋅1024) D+/m2 at room temperature. It was determined the composition of coatings by an energy dispersive X-ray spectrometer allowed to establish that the elements in the coatings are distributed more evenly when it coated in a nitrogen atmosphere. Results of erosion studies indicated that the sputtering yields for deuterium on coatings are 1.3…0.45 at./ion and at least two-three times less in comparison with initial alloys and published data for pure iron and chromium. For coatings deposited in a nitrogen atmosphere found that the obtained sputtering coefficients are almost an order of magnitude smaller in comparison with published data for pure iron and chromium and only 1.8 times higher compared to tungsten.

CRYSTAL GROWTH OF OXIDE THIN FILMS USING MASS-SEPARATED LOW-ENERGY O+ ION BEAMS

1994 ◽  
Vol 08 (01n02) ◽  
pp. 183-205 ◽  
Author(s):  
RYUSUKE KITA
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Oxide Thin Films ◽  
High Quality ◽  
Mbe Growth ◽  
A New Technique

A new technique developed for growing high-quality oxide thin films by molecular beam epitaxy (MBE) is described. The technique uses low-energy and high density O + ion beams mass-separated from an oxygen plasma, as an oxidation source. Since O + ion beams have great oxidation ability and kinetic energy, the technique enables us to grow oxide films by MBE not only under ultrahigh vacuum comparable to the environment where semiconductors are prepared, but also at low temperatures. The application of the technique to the MBE growth of CuO, BaO, SrO and Sr–Cu–O thin films is also described.

Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer

2004 ◽  
Vol 19 (9) ◽  
pp. 2725-2729 ◽  
Author(s):  
Atsushi Sasaki ◽  
Jin Liu ◽  
Wakana Hara ◽  
Shusaku Akiba ◽  
Keisuke Saito ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Room Temperature ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
Heteroepitaxial Structure ◽  
Temperature Growth ◽  
X Ray ◽  
Relationship Of

Room-temperature epitaxy of AlN thin films on sapphire (0001) substrates was achieved by pulsed laser deposition using an epitaxial NiO ultrathin buffer layer (approximately 6 nm thick). Four-circle x-ray diffraction analysis indicates a double heteroepitaxial structure of AlN (0001)/NiO(111)/sapphire (0001) with the epitaxial relationship of AlN [10-10] ‖ NiO [11-2] ‖ sapphire [11-20]. The surface morphology of room-temperature grown AlN thin films was found to be atomically smooth and nanostepped, reflecting the surface of the ultrasmooth sapphire substrate with 0.2-nm-high steps.

scholarly journals DEUTERIUM TRAPPING AND SPUTTERING OF TUNGSTEN COATINGS EXPOSED TO LOW-ENERGY DEUTERIUM PLASMA

2020 ◽  
pp. 54-59
Author(s):  
G.D. Tolstolutskaya ◽  
A.S. Kuprin ◽  
A.V. Nikitin ◽  
I.E. Kopanets ◽  
V.N. Voyevodin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Low Energy ◽  
Deuterium Plasma ◽  
Martensitic Steels ◽  
Order Of Magnitude ◽  
Cathodic Arc Evaporation ◽  
Deuterium Retention ◽  
Sputtering Yields ◽  
Arc Evaporation ◽  
Cathodic Arc

Processes of sputtering, surface modification and deuterium retention of tungsten coatings were studied under the influence of low-energy (500 eV) deuterium plasma with fluence (21024 D+/m2) at room temperature. The method of cathodic arc evaporation was used to deposit W and WN-coatings on stainless steel. Results of erosion studies indicated that the sputtering yields for coatings WN and W are 3.110-3 and 4.810-3 at./ion, respectively, and at least two times larger compared to bulk W but almost an order of magnitude smaller compared to ferritic martensitic steels. The total D retentions of W coatings were on the order of 51019 D/m2 and around one orders of magnitude lower than that of WN.

Effect of pressure on the superionic argyrodite Ag7GeSe5I

2008 ◽  
Vol 42 (1) ◽  
pp. 93-100 ◽  
Author(s):  
Stéphanie Albert ◽  
Julien Haines ◽  
Dominique Granier ◽  
Annie Pradel ◽  
Michel Ribes
Keyword(s):  
Room Temperature ◽  
Conduction Mechanism ◽  
Ambient Pressure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Effect Of Pressure ◽  
A Value ◽  
Conduction Pathway ◽  
Order Of Magnitude ◽  
Pseudo Potential

The effect of pressure on both the structure and the electrical conductivity of the superionic Ag7GeSe5I phase has been studied at room temperature (i) by powder X-ray diffraction from 0.1 MPa to 10 GPa, (ii) by single-crystal X-ray diffraction from 0.1 MPa to 2 GPa and (iii) by impedance spectroscopy from 0.1 MPa to 1.5 GPa. The decrease in conductivity of about one order of magnitude when the pressure increases up to 1.5 GPa can be explained by compression of the cell. For a pressure increase up to 10 GPa, compression of the cell is about 6% in volume. The compressibility of the cell affects mainly two sites,i.e.I and one of the two Ag sites. Both sites have a very largeBisothat increases even further with pressure, to reach a value close to 11.5 Å2at 1.5 GPa. The occupancy of both Ag sites changes with pressure and becomes similar above 0.8 GPa. On the whole, it appears that the conduction mechanism is affected by pressure. While the conduction pathway is not changed, the limiting jump for ionic diffusion changes from an intercluster jump with a pseudo-potential barrier of about 257 meV at ambient pressure to an indirect jump with a pseudo-potential value of 240 meV at 1.8 GPa.

STEM and ELS Observation of Early Oxide Formation on the Surface of Cr Thin Films

1980 ◽  
Vol 38 ◽  
pp. 412-413
Author(s):  
Fumio Watari ◽  
J. M. Cowley
Keyword(s):  
Thin Films ◽  
Optical System ◽  
Room Temperature ◽  
Oxide Formation ◽  
Initial Nucleation ◽  
Diffraction Patterns ◽  
Relationship Of ◽  
Multiple Twinning ◽  
Moderately High Temperature

STEM coupled with the optical system was used for the investigation of the early oxidation on the surface of Cr. Cr thin films (30 – 1000Å) were prepared by evaporation onto the polished or air-cleaved NaCl substrates at room temperature and 45°C in a vacuum of 10−6 Torr with an evaporation speed 0.3Å/sec. Rather thick specimens (200 – 1000Å) with various preferred orientations were used for the investigation of the oxidation at moderately high temperature (600 − 1100°C). Selected area diffraction patterns in these specimens are usually very much complicated by the existence of the different kinds of oxides and their multiple twinning. The determination of the epitaxial orientation relationship of the oxides formed on the Cr surface was made possible by intensive use of the optical system and microdiffraction techniques. Prior to the formation of the known rhombohedral Cr2O3, a thin spinel oxide, probably analogous to γ -Al203 or γ -Fe203, was formed. Fig. 1a shows the distinct epitaxial growth of the spinel (001) as well as the rhombohedral (125) on the well-oriented Cr(001) surface. In the case of the Cr specimen with the (001) preferred orientation (Fig. 1b), the rings explainable by spinel structure appeared as well as the well defined epitaxial spots of the spinel (001). The microdif fraction from 20A areas (Fig. 2a) clearly shows the same pattern as Fig. Ia with the weaker oxide spots among the more intense Cr spots, indicating that the thickness of the oxide is much less than that of Cr. The rhombohedral Cr2O3 was nucleated preferably at the Cr(011) sites provided by the polycrystalline nature of the present specimens with the relation Cr2O3 (001)//Cr(011), and by further oxidation it grew into full coverage of the rest of the Cr surface with the orientation determined by the initial nucleation.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

Luminescence Properties of Europium-Doped Yttrium Oxides Derived from Their Dodecylsulfate-Templated Mesostructure and Nanotube Forms

2003 ◽  
Vol 775 ◽  
Author(s):  
Tsuyoshi Kijima ◽  
Kenichi Iwanaga ◽  
Tomomi Hamasuna ◽  
Shinji Mohri ◽  
Mitsunori Yada ◽  
...  
Keyword(s):  
Room Temperature ◽  
Broad Band ◽  
Concentration Quenching ◽  
Precipitation Method ◽  
Homogeneous Precipitation ◽  
Bulk Materials ◽  
Main Band ◽  
Homogeneous Precipitation Method ◽  
Order Of Magnitude ◽  
Weak Luminescence

AbstractEuropium-doped hexagonal-mesostructured and nanotubular yttrium oxides templated by dodecylsulfate species as well as surfactant free bulk oxides were synthesized by the homogeneous precipitation method. All the as grown nanostructured or bulk materials with amorphous or poorly crystalline frameworks showed weak luminescence bands at room temperature. On calcination at 1000°C these materials were converted into highly crystalline yttrium oxides, resulting in a total increase in intensity of all the bands by one order of magnitude. In the hexagonal-mesostructured system, the main band due to the 5D0-7F2 transition for the calcined phases showed a sharp but asymmetrical multiplet splitting indicating multiple Eu sites. Concentration quenching was found at a Eu content of 3 mol% or above for these phases. In contrast, the main emission for the calcined solids in the nanotubular system occurred as poorly resolved broad band and the intensity of the main band at higher Eu content was significantly enhanced compared with those for the other two systems.

Temperature Dependence of the Self-Assembled Styrene Based Random Ionomers in Aqueous Solution

2003 ◽  
Vol 775 ◽  
Author(s):  
Sung-Hwa Oh ◽  
Ju-Myung Song ◽  
Joon-Seop Kim ◽  
Hyang-Rim Oh ◽  
Jeong-A Yu
Keyword(s):  
Partition Coefficients ◽  
Room Temperature ◽  
Aqueous Media ◽  
The Self ◽  
Spectroscopic Methods ◽  
Ion Content ◽  
Repeat Units ◽  
Notable Effect ◽  
Order Of Magnitude ◽  
Experimental Errors

AbstractSolution behaviors of poly(styrene-co-sodium methacrylate) were studied by fluorescence spectroscopic methods using pyrene as a probe. The mol% of methacrylate was in the range 3.6–9.4. Water and N,N-dimethylforamide(DMF) mixture was used as a solvent (DMF/water = 0.2 mol %). The critical micelle (or aggregation) concentrations of ionomers and the partition coefficients of pyrene were obtained the temperature range 10–80°C. At room temperature, the values of CMCs (or CACs) were in the range 4.7 ×10-6 5.3 ×10-6 g/mL and we could not find any notable effect of the content of ionic repeat units within the experimental errors. Unlike CMCs, as the ion content increased, partitioning of pyrene between the hydrophobic aggregates and an aqueous media decreased from 1.5 ×105 to 9.4 ×104. As the temperature increased from 10 to 80 °C, the values of CMCs increased less than one order of magnitude. While, the partition coefficients of pyrene decreased one order of magnitude and the effect of the ion content became negligible.

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