Thermal and Collisional Effects on the Intrinsic Stress in Nitride Layers Deposited by Ion-Beam Based Techniques

1992 ◽  
Vol 268 ◽  
Author(s):  
M.A. Djouadi ◽  
D. BOUCHIER
Keyword(s):  
Deposition Temperature ◽  
Room Temperature ◽  
Ion Beam ◽  
Intrinsic Stress ◽  
Post Deposition Annealing ◽  
Superficial Zone ◽  
Recoil Atoms ◽  
Nitride Layers ◽  
Post Deposition

ABSTRACTIn IBAD BN and RIBSD Si3N4 layers deposited at room temperature, the internal stress can always be reduced below -1 GPa by a post-deposition annealing. When the deposition temperature is increased up to 600°C, the stress in Si3N4 layers is not significantly reduced and, in IBAD BN films, it is even greater than expected from the development of the thermal stress, which indicates that no relaxation of the stress occurs during deposition. This implies that the spatial extent of the ion peening effect may largely exceed the penetration depth of ions and of recoil atoms in the solid. In order to confirm this hypothesis, sequences of deposition/in situ annealing/deposition have been performed. In RIBSD films, the relaxation of the annealed sublayer can be observed. In IBAD films, the deposition of the upper layer results in an increase of the stress in the superficial zone of the annealed sublayer.

Preparation and Characterization of PbTiO3 and PbZrO3 Films from Oxide Multilayers

1991 ◽  
Vol 243 ◽  
Author(s):  
Chen C. Li ◽  
Seshu B. Desu
Keyword(s):  
Beam Energy ◽  
Ion Beam ◽  
Deposition Process ◽  
Deposition Technique ◽  
Post Deposition Annealing ◽  
Annealing Temperatures ◽  
Excellent Control ◽  
Oriented Phase ◽  
Post Deposition

AbstractPbTiO3 and PbZrO3 thin films were successfully fabricated from oxide multilayers by employing ion-assisted deposition process (IAD). Excellent control of the film thickness and composition were achieved by using the multilayer deposition technique. A (001)-oriented phase was found in the PbTiO3 films at 550°C with 300 and 600eV Ar+ ion bombardment. Very fine equiaxial grain size of 0.2μm was seen in the IAD deposited PbTiO3 films, which is independent of the Ar+ ion beam energy. The optical properties of the PbTiO3 films were studied for different energies of Ar+ ion beam and for various post-deposition annealing temperatures. PbTiO3 films with packing density of near unity (≅0.99) were obtained at temperatures as low as 600°C.

Electron Microscopy of Ion Deposited Thin Films of the Oxides of Titanium

1985 ◽  
Vol 62 ◽  
Author(s):  
A. B. Harker ◽  
D. G. Howitt ◽  
P. J. Hood ◽  
P. Kobrin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Ion Beam ◽  
Phase 1 ◽  
Equilibrium Phase ◽  
Free Standing ◽  
Fine Mesh ◽  
Voltage Electron ◽  
Post Deposition

ABSTRACTThe reactive ion beam deposition of ceramic films onto unheated substrates can produce amorphous films with essentially molecular mixing. The annealing and hot isotatic pressing (hipping) of these films to produce crystalline phases have reproducable effects which are sensitive to the temperature and the density of the film. Experiments with titanium oxides indicate that it is principally the equilibrium phases that are formed and that hipping can be used to encourage the same transformations at lower temperatures.Thin films of titanium oxide close to the stoichiometry of TiO2 were deposited onto unheated substrates of sodium chloride. Some of the films were removed from the substrate by floating them off in water and the remainder were either annealed or hipped to induce crystallization. The anneals were performed either in air or argon and the hipping was done under an argon pressure of about twenty thousand pounds per square inch. Several of the free standing films were annealed in the same atmospheres on nickel grids. All the specimens were prepared for transmission electron microscopy by the same floating technique and were examined in a Philips 400 T.E.M. at 125 keV. The as deposited films were amorphous and showed no visible texture other than that derived from a small amount of porosity. The films were sufficiently conductive that they could be examined directly in the T.E.M. without carbon coating provided they were supported on a grid of fairly fine mesh. One specimen was also examined in the Kratos 1.5 MeV high voltage electron microscope at the National Center for Electron Microscopy. The specimen was annealed in vacuum using an in-situ hot stage to directly observe the behavior of the film.The post deposition annealing and hipping of these films reproducibly induced the crystallization of anatase below 800°C. This is the equilibrium phase [1] and the extent to which the films transformed and the morphology of the growing crystallites were determined principally by the film thickness. There was little difference between the responses of free standing films and films left on the salt substrate. They tended to transform at about the same temperature, which was reproduced in the in-situ hot stage experiment and the microsructures which formed were very similar. The dependence upon thickness was also reflected in all the microstructures of the different post deposition treatments and it was possible to complete the transformations that were very sluggish in some of the films by hipping them at the same temperatures.

Deposition of Tungsten Boride by Ion Beam Sputtering

1990 ◽  
Vol 181 ◽  
Author(s):  
F. Meyer ◽  
D. Bouchier ◽  
V. Stambouli ◽  
G. Gautherin
Keyword(s):  
Substrate Temperature ◽  
Diffusion Barrier ◽  
Room Temperature ◽  
Bulk Material ◽  
Ion Beam ◽  
Schottky Diodes ◽  
Thick Layer ◽  
Intrinsic Stress ◽  
Tungsten Boride ◽  
Deposition Conditions

ABSTRACTRefractory metal compounds, such as nitrides or borides, are attractive candidates for diffusion barrier between silicon and aluminium in VLSI technology. We studied tungsten boride films deposited on silicon (100) by ion beam sputter deposition (IBSD).The tungsten boride films were prepared by sputtering a W2B5 target by argon ions with energy ranging from 0.5 to 2keV. The substrate temperature was varied from room temperature to 630°C. Finally, the films were patterned by selective wet etching in order to characterize the resulting Schottky diodes. We observed that a boron loss occurs during deposition, probably due to the backscattering of sputtered boron on previously deposited W atoms. By in situ AES analysis, we verified that a 5 nm thick layer acts as a diffusion barrier for silicon up to about 630°C, for all deposition conditions. The films properties were found to depend weakly on the primary ion energy and on the substrate temperature. All the films have resistivity at room temperature in the range of about 250 µΩ cm. The measured density, in the range of 12 g/cm3, is very close to that of WB2 bulk material, while the intrinsic stress of the films remains compressive and in the range of -lGPa. This value is notably lower than what we measured for pure tungsten prepared under similar deposition conditions.

Room Temperature Nitridation and Oxidation of Si, Ge and Mbegrown Sige Using Low Energy Ion Beams (0.1-1 Kev).

1991 ◽  
Vol 223 ◽  
Author(s):  
O. Vancauwenberghe ◽  
O. C. Hellman ◽  
N. Herbots ◽  
J. L. Olson ◽  
W. J. Tan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Film Properties ◽  
Dielectric Thin Films ◽  
Ion Energy ◽  
Insulating Films ◽  
Ion Energies ◽  
Energy Dependent

ABSTRACTDirect Ion Beam Nitridation (IBN) and Oxidation (IBO) of Si, Ge, and Si0.8Ge0.2 were investigated at room temperature as a function of ion energy. The ion energies were selected between 100 eV and 1 keV to establish the role of energy on phase formation and film properties. Si0.8Ge0.2 films were grown by MBE on Si (100) and transferred in UHV to the ion beam processing chamber. The modification of composition and chemical binding was measured as a function of ion beam exposure by in situ XPS analysis. The samples were nitridized or oxidized using until the N or O 1s signal reached saturation for ion doses between 5×1016 to 1×1017 ions/cm2. Combined characterization by XPS, SEM, ellipsometry and cross-section TEM showed that insulating films of stoichiometric SiO2 and Si-rich Si3N4 were formed during IBO and IBN of Si at all energies used. The formation of Ge dielectric thin films by IBO and IBN was found to be strongly energy dependent and insulating layers could be grown only at the lower energies (E ≤ 200 eV). In contrast to pure Ge, insulating SiGe-oxide and SiGe-nitride were successfully formed on Si0.8Ge0.20.2 at all energies studied.

Interval Annealing During Alternating Pulse Deposition

2004 ◽  
Vol 811 ◽  
Author(s):  
J.F. Conley ◽  
D.J. Tweet ◽  
Y. Ono ◽  
G. Stecker
Keyword(s):  
Thin Films ◽  
Interfacial Layer ◽  
Bulk Material ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Equivalent Thickness ◽  
Layer Deposition ◽  
Pulse Deposition ◽  
Post Deposition

AbstractThin films deposited via atomic layer deposition at low temperature tend to be less dense than bulk material and typically require high temperature post deposition annealing for densification and removal of unreacted precursor ligands. We have found that improved film densification can be achieved by interval annealing, in which in-situ moderate temperature (∼420°C) rapid thermal anneals are performed after every n deposition cycles. HfO2 film density and refractive index were found to increase with decreasing anneal interval (more frequent annealing). The highest density films could be achieved only by every-cycle annealing and could not be achieved by post deposition annealing. The densified every cycle annealed films have been shown to have improved equivalent thickness and leakage and decreased interfacial layer thickness.

Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition

MRS Advances ◽  
2017 ◽  
Vol 2 (29) ◽  
pp. 1557-1562 ◽  
Author(s):  
Y. Hibino ◽  
S. Ishihara ◽  
N. Sawamoto ◽  
T. Ohashi ◽  
K. Matsuura ◽  
...  
Keyword(s):  
Extinction Coefficient ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Post Deposition Annealing ◽  
Sputtering Deposition ◽  
X Ray ◽  
Tauc Plot ◽  
Plot Analysis ◽  
Sputtering Power ◽  
Post Deposition

ABSTRACTWe report the synthesis of MoS2(1-x)Te2x by co-sputtering deposition and effect of mixture on its bandgap. The deposition was carried out at room temperature, and the sputtering power on individual MoS2 and MoTe2 targets were varied to obtain films with different compositions. Investigation with X-ray photoelectron spectroscopy confirmed the formation of Mo-Te and Mo-S bonds after post-deposition annealing (PDA), and one of the samples exhibited composition ratio of Mo:S:Te = 1:1.2:0.8 and 1:1.9:0.1 achieving 1:2 ratio of metal to chalcogen. Bandgap of MoS1.2Te0.8 and MoS1.9Te0.1 was evaluated with Tauc plot analysis from the extinction coefficient obtained by spectroscopic ellipsometry measurements. The obtained bandgaps were 1.0 eV and 1.3 eV. The resulting bandgap was lower than that of bulk MoS2 and higher than that of bulk MoTe2 suggesting mixture of both materials was achieved by co-sputtering.

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