Preparation and Characterization of PbTiO3 and PbZrO3 Films from Oxide Multilayers

1991 ◽  
Vol 243 ◽  
Author(s):  
Chen C. Li ◽  
Seshu B. Desu
Keyword(s):  
Beam Energy ◽  
Ion Beam ◽  
Deposition Process ◽  
Deposition Technique ◽  
Post Deposition Annealing ◽  
Annealing Temperatures ◽  
Excellent Control ◽  
Oriented Phase ◽  
Post Deposition

AbstractPbTiO3 and PbZrO3 thin films were successfully fabricated from oxide multilayers by employing ion-assisted deposition process (IAD). Excellent control of the film thickness and composition were achieved by using the multilayer deposition technique. A (001)-oriented phase was found in the PbTiO3 films at 550°C with 300 and 600eV Ar+ ion bombardment. Very fine equiaxial grain size of 0.2μm was seen in the IAD deposited PbTiO3 films, which is independent of the Ar+ ion beam energy. The optical properties of the PbTiO3 films were studied for different energies of Ar+ ion beam and for various post-deposition annealing temperatures. PbTiO3 films with packing density of near unity (≅0.99) were obtained at temperatures as low as 600°C.

scholarly journals Control of Structural and Magnetic Properties of Polycrystalline Co2FeGe Films via Deposition and Annealing Temperatures

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1229
Author(s):  
Andrii Vovk ◽  
Sergey A. Bunyaev ◽  
Pavel Štrichovanec ◽  
Nikolay R. Vovk ◽  
Bogdan Postolnyi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Post Deposition Annealing ◽  
Structure Variation ◽  
Annealing Temperatures ◽  
Damping Parameter ◽  
Soft Ferromagnetic ◽  
Thin Polycrystalline ◽  
Post Deposition

Thin polycrystalline Co2FeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (TS) and post-deposition annealing (Ta) on structure, static and dynamic magnetic properties were systematically studied. It is shown that elevated TS (Ta) promote formation of ordered L21 crystal structure. Variation of TS (Ta) allow modification of magnetic properties in a broad range. Saturation magnetization ~920 emu/cm3 and low magnetization damping parameter α ~ 0.004 were achieved for TS = 573 K. This in combination with soft ferromagnetic properties (coercivity below 6 Oe) makes the films attractive candidates for spin-transfer torque and magnonic devices.

Optimized screen-printing and SEM-FIB characterization of YSZ thin films for Solid Oxide Fuel Cells and gas sensors devices

2004 ◽  
Vol 822 ◽  
Author(s):  
A. Morata ◽  
A. Tarancón ◽  
G. Dezanneau ◽  
F. Peiró ◽  
J. R. Morante
Keyword(s):  
Experimental Design ◽  
Screen Printing ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Deposition Process ◽  
Technological Parameters ◽  
Significant Information ◽  
Screen Printing Technique ◽  
Final Porosity

AbstractIn the present work, the screen printing technique has been used to deposit thick films of Zr0.84Y016O1.92 (8YSZ). In order to control the final porosity in view of a specific application (SOFCs or gas sensor), an experimental design based on analysis of variances (ANOVA) has been carried out. From this, we were able to determine the influence of several technological parameters on films porosity and grain size. The films obtained have been analysed with both Scanning Electron Microscopy (SEM) and Focused Ion Beam (FIB) combined with SEM. We show that only the combination of experimental design and advanced observation technique such as Focused Ion Beam allowed us to extract significant information for the improvement of the deposition process.

Evaluation Of 2.0 nm Grown and Deposited Dielectrics in 0.1 μm PMOSFETs

1998 ◽  
Vol 525 ◽  
Author(s):  
A. Srivastava ◽  
H. H. Heinisch ◽  
E. Vogel ◽  
C. Parker ◽  
C. M. Osburn ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characterization ◽  
Deposition Process ◽  
Gate Oxides ◽  
Boron Doped ◽  
Excellent Control ◽  
Lower Temperature ◽  
Boron Penetration

ABSTRACTThe quality and composition of ultra-thin 2.0 nm gate dielectrics advocated for the 0.1 μm technology regime is expected to significantly impact gate tunneling currents, P+-gate dopant depletion effects and boron penetration into the substrate in PMOSFETs. This paper presents a comparative assessment of alternative grown and deposited gate dielectrics in sub-micron fabricated devices. High quality rapid-thermal CVD oxides and oxynitrides are examined as alternatives to conventional furnace grown gate oxides. An alternative gate process using in-situ boron doped and RTCVD deposited poly-Si is explored. PMOSFETs with Leff down to 0.06 μm were fabricated using a 0.1 μm technology. Electrical characterization of fabricated devices revealed excellent control of gate-boron depletion with the in-situ gate deposition process in all devices. Boron penetration of 2.0 nm gate oxides was effectively controlled by the use of a lower temperature RTA process. The direct tunneling leakage, although significant at these thicknesses, was less than 1 mA/cm2 at Vd = −1.2 V for all dielectrics. MOSFETs with comparable drive currents and excellent junction and off-state leakages were obtained with each dielectric.

scholarly journals Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge)/Aluminium Oxide (Al2O3)

2019 ◽  
Vol 48 (6) ◽  
pp. 1195-1199 ◽  
Author(s):  
Siti Kudnie Sahari ◽  
Nik Amni Fathi Nik Zaini Fathi ◽  
Azrul Azlan Hamzah ◽  
Norsuzailina Mohamed Sutan ◽  
Zaidi Embong ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Aluminium Oxide ◽  
Post Deposition Annealing ◽  
Annealing Temperatures ◽  
Post Deposition
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