New Patternable Materials for Electronic Packaging

1992 ◽  
Vol 264 ◽  
Author(s):  
Michael Popall ◽  
Jürgen Kappel ◽  
Monika Pilz ◽  
Jochen Schulz
Keyword(s):  
Protective Coatings ◽  
Dielectric Strength ◽  
Processing Parameters ◽  
Direct Writing ◽  
Organically Modified ◽  
Passivation Layers ◽  
Copper Aluminum ◽  
High Dielectric ◽  
Low Permittivity ◽  
High Bulk

AbstractNew inorganic-organic copolymers (ORMOCERs – ORganically MOdified CERamics) were developed as protective coatings for electronic and optical devices, as patternable insulation and passivation layers for electronics, e. g. MCM's, and as possible interconnects and waveguides for micro optics.Depending on the chemical composition and the processing parameters, their important features are low permittivity constants (eR ≤ 3.2), high bulk resistance (RD > 1016 Ωcm), high dielectric strength (ED ≤ 400 V/μm), refractive index around 1.48, optical transparency in the range of 400 – 1300 nm, and good adhesion to numerous substrates, such as Al2O3, glass, silicon, copper, aluminum, steel, polyimides, polyesters and epoxides.The materials can be applied using standard technology. They are patterned by laser direct writing, photolithographic, screen printing or embossing technologies.

scholarly journals Inorganic-Organic Composites (Ormocers) as Structured Layers for Microelectronics

1990 ◽  
Vol 180 ◽  
Author(s):  
Michael Popall ◽  
Henning Meyer ◽  
Helmut Schmidt ◽  
Jochen Schulz
Keyword(s):  
System Integration ◽  
Signal Transmission ◽  
Sol Gel ◽  
Unsaturated Hydrocarbon ◽  
Direct Laser ◽  
Organically Modified ◽  
Integration Techniques ◽  
Edge Quality ◽  
Low Permittivity ◽  
High Bulk

ABSTRACTEnhanced integration, faster signal transmission and reduced size of mounting devices in components for microelectronics requires new patternable materials. Inorganic-organic copolymers (ORMOCERs = ORganically MOdified CERamics), prepared by sol-gel techniques have been developed for interconnection technologies in microelectronics. Photopolymerization is enabled by unsaturated hydrocarbon or epoxide substituents and UV-sensitive initiators. Using a frequency doubled Argonion laser at 257 nm for direct laser writing, patterned layers with high edge quality have been realized. In combination with high breakthrough voltages, low permittivity constants and high bulk resistivities they open interesting aspects for very large system integration techniques (VLSI).

scholarly journals A potential subsurface cavity in the continuous ejecta deposits of the Ziwei crater discovered by the Chang’E-3 mission

2021 ◽  
Vol 73 (1) ◽  
Author(s):  
Chunyu Ding ◽  
Zhiyong Xiao ◽  
Yan Su
Keyword(s):  
Lunar Regolith ◽  
Lava Tubes ◽  
Impact Ejecta ◽  
Comprehensive Comparison ◽  
Ground Penetrating ◽  
Shallow Crust ◽  
Low Permittivity ◽  
Mare Basalts ◽  
Subsurface Cavities ◽  
High Bulk

AbstractIn the radargram obtained by the high-frequency lunar penetrating radar onboard the Chang’E-3 mission, we notice a potential subsurface cavity that has a smaller permittivity compared to the surrounding materials. The two-way travel time between the top and bottom boundaries of the potential cavity is ~ 21 ns, and the entire zone is located within the continuous ejecta deposits of the Ziwei crater, which generally have similar physical properties to typical lunar regolith. We carried out numerical simulations for electromagnetic wave propagation to investigate the nature of this low-permittivity zone. Assuming different shapes for this zone, a comprehensive comparison between our model results and the observed radargram suggests that the roof of this zone is convex and slightly inclined to the south. Modeling subsurface materials with different relative permittivities suggests that the low-permittivity zone is most likely formed due to a subsurface cavity. The maximum vertical dimension of this potential cavity is ~ 3.1 m. While the continuous ejecta deposits of Ziwei crater are largely composed of pre-impact regolith, competent mare basalts were also excavated, which is evident by the abundant meter-scale boulders on the wall and rim of Ziwei crater. We infer that the subsurface cavity is supported by excavated large boulders, which were stacked during the energetic emplacement of the continuous ejecta deposits. However, the exact geometry of this cavity (e.g., the width) cannot be constrained using the single two-dimensional radar profile. This discovery indicates that large voids formed during the emplacement of impact ejecta should be abundant on the Moon, which contributes to the high bulk porosity of the lunar shallow crust, as discovered by the GRAIL mission. Our results further suggest that ground penetrating radar is capable of detecting and deciphering subsurface cavities such as lava tubes, which can be applied in future lunar and deep space explorations.

scholarly journals Space Charge and Electric Field Analysis on Contaminated XLPE Insulator

2018 ◽  
Vol 12 (1) ◽  
pp. 370
Author(s):  
M.H.A. Wahab ◽  
N. A. M. Jamail ◽  
E. Sulaiman ◽  
Q.E. Kamarudin ◽  
N.A. Othman ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electric Field ◽  
Space Charge ◽  
Dielectric Strength ◽  
Field Analysis ◽  
Ethylene Dichloride ◽  
Xlpe Cable ◽  
Lower Dielectric Constant ◽  
High Dielectric ◽  
Xlpe Insulation

<p>Nowadays, XLPE cable has been widely used because it has better resistance than other cables. XLPE insulation has unique features including a high dielectric strength and high insulation resistance. A lot of researches based on hardware and software have been conducted to prove the effectiveness of XLPE cable such as AC and DC applications and Space Charge Distribution measurement under HVDC at High Temperature. This research focused on analysis of space charge and electric field on XLPE cable with effect of non-uniform contamination layer by using Quickfield Software. Non-uniform contaminations have been applied along XLPE cable using Arsenic Tribromide (AsBr3), Boron Bromide (BBr3), Ethylene Dichloride (CH2C1), Formic Acid (CH1O2), Formamide (CH3NO) and Alcohol element. Presence of these contamination elements represent of underground contamination. The size and layer of the contamination were non-uniform type. From the results, it is shown that lower dielectric constant of contamination will affect more on charge of XLPE insulation. As a conclusion, it can be seen lower dielectric constant value of contamination element greatly affecting the performance of XLPE insulation. Furthermore, size of contamination also influences the content of charge in contamination where the bigger the contamination size, the more charge contained in the contamination.</p>

Nanocomposite Dielectric Material: Au/SiO2-gel

1992 ◽  
Vol 286 ◽  
Author(s):  
G.C. Vezzoli ◽  
M.F. Chen
Keyword(s):  
Silica Gel ◽  
Microprobe Analysis ◽  
Dielectric Material ◽  
Sol Gel ◽  
Dielectric Strength ◽  
Optimal Topology ◽  
Gold Chloride ◽  
Gel Technique ◽  
High Dielectric ◽  
Nanocomposite Dielectric

ABSTRACTA nanocomposite of clusters of gold atoms in a silica gel matrix has been prepared by the sol-gel technique through reduction of gold chloride. This composite was fabricated to explore novel techniques for materialsengineering new high dielectric strength substances for capacitor applications. The gold islands amidst the silica gel sea are materials-designed to utilize the percolation threshhold phenomenon to create a peak in the dielectricconstant as a function of optimal topology. Experimental results indicate an average dielectric constant of the order of 5000 at 1 kHz, and a maximum versus temperature at ∼ −100°C. Electron microscope and microprobe analysis indicate ellipsoidal Au particles or clusters of a dimension ranging from a hundred angstroms to several thousand angstroms.

Development of High-Dielectric-Strength Ceramic Film Capacitors for Advanced Power Electronics

2012 ◽  
Vol 2012 (1) ◽  
pp. 000609-000616
Author(s):  
Beihai Ma ◽  
Manoj Narayanan ◽  
Shanshan Liu ◽  
Sheng Tong ◽  
U. (Balu) Balachandran
Keyword(s):  
Dielectric Constant ◽  
Power Electronics ◽  
Room Temperature ◽  
Breakdown Strength ◽  
Dielectric Strength ◽  
X Ray Diffraction ◽  
Lead Lanthanum Zirconate Titanate ◽  
Solution Deposition ◽  
Ceramic Film ◽  
High Dielectric

Ceramic film capacitors with high dielectric constant and high breakdown strength are promising for use in advanced power electronics, which would offer higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies. We have grown lead lanthanum zirconate titanate (PLZT) on nickel foils and platinized silicon (PtSi) substrates by chemical solution deposition. A buffer layer of LaNiO3 (LNO) was deposited on the nickel foils prior to the deposition of PLZT. We measured the following electrical properties for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively: remanent polarization, ≈25.4 μC/cm2 and ≈10.1 μC/cm2; coercive electric field, ≈23.8 kV/cm and ≈27.9 kV/cm; dielectric constant at room temperature, ≈1300 and ≈1350; and dielectric loss at room temperature, ≈0.06 and ≈0.05. Weibull analysis determined the mean breakdown strength to be 2.6 MV/cm and 1.5 MV/cm for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively. Residual stress analysis by x-ray diffraction revealed compressive stress of ≈-520 MPa in the ≈2-μm-thick PLZT grown on LNO buffered Ni foil, but a tensile stress of ≈210 MPa in the ≈2-μm-thick PLZT grown on PtSi substrates.

RF Capacitor Material for Use in Printed Circuit Board

2013 ◽  
Vol 2013 (1) ◽  
pp. 000507-000510
Author(s):  
Jin-Hyun Hwang ◽  
John Andresakis ◽  
Ethan Feinberg ◽  
Bob Carter ◽  
Yuji Kageyama ◽  
...  
Keyword(s):  
Printed Circuit Board ◽  
Temperature Stability ◽  
Dielectric Strength ◽  
Polymer Composite Material ◽  
Circuit Board ◽  
Discrete Elements ◽  
Low Loss ◽  
Printed Circuit ◽  
Material Issue ◽  
High Dielectric

A novel ceramic-functional-particle-filled polymer composite material has been developed for the use either in discrete elements on the printed circuit board or in being embedded within the packaging substrate for high frequency circuit applications. This material provides the desired properties such as low loss at high frequencies, about 0.002 or less up to 10GHz, and high dielectric strength, among other improved properties. The electrical properties were influenced significantly by the ceramic-functional-particle, i.e. type and particle size/distribution in the polymer matrix. Their contributions to the electric strength and temperature stability of capacitance which is an important material issue for practical device application will be discussed. In addition, capacitance tolerance for manufacturing embedded RF capacitor will be presented in terms of etching uniformity to minimize the variation of the capacitor electrode areas.

Adhesion and Dielectric Strength of Ultra-Low Dielectric Constant PTFE Thin Films

1997 ◽  
Vol 476 ◽  
Author(s):  
C.T. Rosenmaver ◽  
J. W. Bartz ◽  
J. Hammes
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Strength ◽  
Low Dielectric Constant ◽  
Thermal Treatments ◽  
Test Results ◽  
Low Dielectric ◽  
Metal Insulator Metal ◽  
Thickness Standard ◽  
High Dielectric

AbstractPrevious work has demonstrated the potential of polytetrafluoroethylene (PTFE) thin films for ULSI applications. The films are deposited from PTFE nanoemulsions. They have an ultra-low dielectric constant of 1.7 to 2.0, a leakage current of less than 1.0 nA/cm2 @ 0.2 MV/cm and a dielectric strength of from 0.5 to 2.4 MV/cm. They are thermally stable (isothermal weight loss < 1.0 %/hr at 450 °C), uniform (thickness standard deviation < 2%), and have excellent gap-fill properties (viscosity of 1.55 cP and surface tension of 18 mN/m). The films are inert with respect to all known semiconductor process chemicals, yet they are easily etched in an oxygen plasma.This paper discusses the processing technology that has been developed to process PTFE films with these properties. Specifically, it addresses two recent discoveries: 1) Good adhesion of spin-coated PTFE to SiO2 surfaces; and 2) high dielectric strength of PTFE thin films spin-coat deposited onto rigid substrates. The adhesion-promoting and thermal treatments necessary to produce these properties are detailed. Stud pull test results and test results from metal-insulator-metal (MIM) capacitor structures are given.

scholarly journals High-K dielectric sulfur-selenium alloys

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxides ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Dielectric Materials ◽  
High K ◽  
Device Applications ◽  
High K Dielectric ◽  
High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

Fibre pulsing during melt electrospinning writing

2016 ◽  
Vol 17 (3-4) ◽  
Author(s):  
Gernot Hochleitner ◽  
Almoatazbellah Youssef ◽  
Andrei Hrynevich ◽  
Jodie N. Haigh ◽  
Tomasz Jungst ◽  
...  
Keyword(s):  
Additive Manufacturing ◽  
Processing Parameters ◽  
Simple Approach ◽  
Direct Writing ◽  
Melt Electrospinning ◽  
Printing Quality ◽  
Constant Diameter ◽  
Feeding Pressure ◽  
The Stability ◽  
Acceleration Voltage

AbstractAdditive manufacturing with electrohydrodynamic direct writing is a promising approach for the production of polymeric microscale objects. In this study we investigate the stability of one such process, melt electrospinning writing, to maintain accurate placement of the deposited fibre throughout the entire print. The influence of acceleration voltage and feeding pressure on the deposited poly(ε-caprolactone) fibre homogeneity is described, and how this affects the variable lag of the jet drawn by the collector movement. Three classes of diameter instabilities were observed that led to poor printing quality: (1) temporary pulsing, (2) continuous pulsing, and (3) regular long bead defects. No breakup of the electrified jet was observed for any of the experiments. A simple approach is presented for the melt electrospinning user to evaluate fibre writing integrity, and adjust the processing parameters accordingly to achieve reproducible and constant diameter fibres.

Anomalously high dielectric strength and low frequency dielectric relaxation of a bent-core liquid crystal with a large kink angle

2017 ◽  
Vol 17 (6) ◽  
pp. 858-863 ◽  
Author(s):  
Anoop Kumar Srivastava ◽  
Jongyoon Kim ◽  
Sunggu Yeo ◽  
Jinyoung Jeong ◽  
E-Joon Choi ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Dielectric Relaxation ◽  
Low Frequency ◽  
Dielectric Strength ◽  
Kink Angle ◽  
High Dielectric
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