Van Der Waals Epitaxy of GaSe on WSe2
Keyword(s):
X Ray
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ABSTRACTGaSe layers were grown on the van der Waals (0001) planes of WSe2 (van der Waals epitaxy). The substrate (0001) plane was cleaned in UHV by heating to 400°C. GaSe was deposited from resistively heated Knudsen cells at T=300° C. After annealing at 450°C an epitaxial GaSe overlayer is formed as evidenced by X-ray diffraction, scanning tunneling microscopy, low energy electron diffraction and photoelectron spectroscopy.
1999 ◽
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pp. 121-130
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2014 ◽
Vol 10
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