B+, P+, AS+ and Si+ Ion Implantation Induced Defects in Silicon Studied by a Variable-Energy Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
Jun Sugiura ◽  
Makoto Ogasavara ◽  
Akira Uedono ◽  
Long Vei ◽  
Shoichiro Tanigava
Keyword(s):  
Ion Beam ◽  
Positron Beam ◽  
Beam Current ◽  
Positron Energy ◽  
Beam Depth ◽  
Induced Defects ◽  
Higher Doses ◽  
Annealing Experiments ◽  
Vacancy Type Defect ◽  
Variable Energy

ABSTRACTVacancy type defects introduced by As+, P+, Si+ and B+ ion implantations into Si (100) single crystals were studied by a variable-energy positron beam. Depth distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that this technique is sensitive not only to a vacancy type defect but to formation of amorphous regions. The defects introduced by lower doses were identified as vacancy clusters from isochronal annealing experiments. By higher doses such as 5×1014 /cm2, amorphous layers were formed for 150KeV As+, 150KeV P+, and 200KeV Si+ ions, and it was not formed for 80KeV B+ by the dose of 5×1015 /cm2. These results are consistent with the calculated critical doses. In the case of B+, pre-amorphous formation was observed with higher ion beam current over 5mA and a dose of 5×1015 /cm2.

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

The Study of Si, Se and O-Implanted GaAs by Slow Positrons

1992 ◽  
Vol 262 ◽  
Author(s):  
S. Fujii ◽  
S. Shikata ◽  
L. Wei ◽  
S. Tanigaw
Keyword(s):  
Positron Beam ◽  
Annealed Specimen ◽  
Electrical Characteristics ◽  
High Concentration ◽  
Positron Energy ◽  
Vacancy Clusters ◽  
Activation Efficiency ◽  
Before And After ◽  
Parallel Measurement ◽  
Variable Energy

ABSTRACTVariable-energy (0–30keV) positron beam studies have been carried out on 200 keV Se-implanted and 70 keV Si-implanted GaAs specimens before and after annealing for electrical activation. From the measurements of Doppler broadened profiles as a function of incident positron energy, it was found that vacancy clusters with high concentration were introduced in the annealed specimen after Se implantation. From the parallel measurement of electrical characteristics, a higher activation efficiency was found for the higher concentration of vacancy clusters. That fact implies that electrons supplied by the activation of Se also convert the charge state of As vacancies from positive to negative. In contrast, no vacancy clusters were introduced in the Si-implanted GaAs. On the other hand, oxygen clustering was found in annealed specimen after O implantation.

scholarly journals A new approach to near-surface positron annihilation analysis of ion irradiated ferritic alloys

2021 ◽  
Author(s):  
Vladimir Krsjak ◽  
Petr Hruška ◽  
Jarmila Degmova ◽  
Stanislav Sojak ◽  
Pavol Noga ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Ion Beam ◽  
Positron Beam ◽  
Ion Beam Irradiation ◽  
Near Surface ◽  
Slow Positron ◽  
New Approach ◽  
Ferritic Alloys ◽  
Positron Annihilation Lifetime ◽  
Variable Energy

The present work provides an innovative approach to the near-surface slow-positron-beam (SPB) study of structural materials exposed to ion-beam irradiation. This approach enables the use of variable-energy positron annihilation lifetime...

Defect Detection in Fe-Cr Alloys with Positron Annihilation Doppler Broadening Spectroscopy

2012 ◽  
Vol 733 ◽  
pp. 270-273 ◽  
Author(s):  
Veronika Sabelová ◽  
Martin Petriska ◽  
Jana Veterníková ◽  
Vladimir Slugeň ◽  
Jarmila Degmová ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Beam ◽  
Quantitative Information ◽  
Structural Defects ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Open Volume ◽  
Order Of Magnitude ◽  
Radiation Induced ◽  
Induced Defects

Positron annihilation Doppler broadening spectroscopy (DBS) has been used for the detection of structural defects in Fe-9wt%Cr (Fe-9Cr) alloy in the as-prepared and implanted states. Defects were created by He and H ion implantation with a kinetic energy of 250 keV. DBS is a non-destructive method and is a unique tool for the observation of open volume defects like vacancies and vacancy clusters in solids. A positron beam with variable positron energy was used for the measurement of defect depth profiles up to 1.5 µm. The obtained results provide qualitative and semi-quantitative information about radiation induced defects and their chemical environment. Although the collision damage from helium implantation was one order of magnitude higher than for the case of hydrogen, the changes in S and W parameters are much less significant, probably due to considerably lower mobility of helium in the implanted materials, which results in helium capture by the created open volume defects.

scholarly journals Slow positron beam at the JINR, Dubna

Nukleonika ◽  
2015 ◽  
Vol 60 (4) ◽  
pp. 725-728 ◽  
Author(s):  
Paweł Horodek ◽  
Andrey G. Kobets ◽  
Igor N. Meshkov ◽  
Alexey A. Sidorin ◽  
Oleg S. Orlov
Keyword(s):  
Diffusion Length ◽  
Nuclear Research ◽  
Positron Beam ◽  
Positron Annihilation Spectroscopy ◽  
Low Energy ◽  
Positron Energy ◽  
Slow Positron ◽  
Tungsten Foil ◽  
Sample Chamber ◽  
Variable Energy

Abstract The Low Energy Positron Toroidal Accumulator (LEPTA) at the Joint Institute for Nuclear Research (JINR) proposed for generation of positronium in flight has been adopted for positron annihilation spectroscopy (PAS). The positron injector generates continuous slow positron beam with positron energy range between 50 eV and 35 keV. The radioactive 22Na isotope is used. In distinction to popular tungsten foil, here the solid neon is used as moderator. It allows to obtain the beam intensity of about 105 e+/s width energy spectrum characterized by full width at half maximum (FWHM) of 3.4 eV and a tail to lower energies of about 30 eV. The paper covers the characteristic of variable energy positron beam at the LEPTA facility: parameters, the rule of moderation, scheme of injector, and transportation of positrons into the sample chamber. Recent status of the project and its development in the field of PAS is discussed. As an example, the measurement of the positron diffusion length in pure iron is demonstrated.

Effects of Ion Beam Milling on Surface Topography

1973 ◽  
Vol 31 ◽  
pp. 84-85
Author(s):  
P.G. Pawar ◽  
P. Duhamel ◽  
G.W. Monk
Keyword(s):  
Surface Topography ◽  
Ion Beam ◽  
Solid Material ◽  
Beam Current ◽  
Atomic Mass ◽  
Micro Milling ◽  
Ion Milling ◽  
Controlled Atmospheres ◽  
Milling Operations ◽  
Sufficient Energy

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.

Quantitative Electrical Analysis of FIB Prepared Vias on BiCMOS and CMOS090 Designs

2006 ◽  
Author(s):  
B. Domengès ◽  
P. Poirier
Keyword(s):  
Ion Beam ◽  
Beam Current ◽  
Kelvin Probe ◽  
Metal Line ◽  
Cross Sectional ◽  
Probe Technique ◽  
Cross Sectional Analysis ◽  
Controlling Parameter ◽  
Electrical Analysis ◽  
Sectional Analysis

Abstract In this study, the resistance of FIB prepared vias was characterized by the Kelvin probe technique and their physical characteristics studied using cross-sectional analysis. Two domains of resistivity were isolated in relation to the ion beam current used for the deposition of the via metal (Pt). Also submicrometer vias were investigated on 4.2 µm deep metal lines of a BiCMOS aluminum based design and a CMOS 090 copper based one. It is shown that the controlling parameter is the shape and volume of the contact, and that the contact formation is favored by the amount of over-mill of the via into the metal line it will contact.

Defect Annihilation in Czochralski-Grown Silicon During Out-Diffusion Process Probed with Variable-Energy Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
T. Kitano ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
H. Mikoshiba
Keyword(s):  
High Temperature ◽  
Diffusion Process ◽  
Grown Crystal ◽  
Positron Beam ◽  
Defect Concentration ◽  
Energy Beam ◽  
Oxygen Cluster ◽  
Variable Energy ◽  
Oxygen Atoms

ABSTRACTThe defect annihilation in CZ-crystal was first detected during the process of oxygen out-diffusion, by the positron measurements with a variable-energy beam. The defects, which were related to oxygen atoms such as oxygen cluster, were mainly annihilated at the high temperature, ex., 1150°C. The defect concentration was decreasing down to one tenth, compared with that for an as-grown crystal.

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