Interfacial Reactions of the Pt/Ti/Si Structures

1992 ◽  
Vol 260 ◽  
Author(s):  
Bae-Heng Tseng ◽  
Chong-Kuang Lee ◽  
Ming-Feng Tseng
Keyword(s):  
Electron Microscope ◽  
Solid Solutions ◽  
Transmission Electron Microscope ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Interfacial Reactions ◽  
Si Substrate ◽  
Native Oxides ◽  
Ti Oxides ◽  
Transmission Electron

ABSTRACTA 15rm-thick Ti-layer incorporated between Pt and Si was found to be effective in improving the structures of PtSi/Si interface. The roles of Ti-layer were to react with native oxides on the Si substrate and to form Ti-O solid solutions instead of Ti oxides which act as diffusion barrier and inhibit the reactions between Pt and Si. Auger depth profiling gave evidence that Ti and O moved outward as platinum suicides were formed. A smooth PtSi/Si interface was revealed by the transmission electron microscope.

In situ electron diffraction study of synthetic (Ca1-xSrx)2MgSi2O7 åkermanites

2000 ◽  
Vol 215 (9) ◽  
Author(s):  
H. Rager ◽  
M. Schosnig ◽  
A.K. Schaper ◽  
A. Kutoglu ◽  
W. Treutmann
Keyword(s):  
Phase Transitions ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Diffraction Study ◽  
Solid Solutions ◽  
Transmission Electron Microscope ◽  
Electron Diffraction Study ◽  
Modulated Structure ◽  
Transmission Electron

This paper deals with transmission electron microscope experiments of Ca,Sr-åkermanite solid solutions at temperatures between 100 K and 375 K. The aim of the investigations was to study the compositional and temperature dependence of phase transitions from the normal to the incommensurately modulated structure of(Ca

Nanoscale Pattern Transfer Using Sputter-Induced Corrugations Formed at the Si/SiO2 Interface

2001 ◽  
Vol 705 ◽  
Author(s):  
Cary G. Allen ◽  
Matthew Daniels ◽  
Christopher C. Umbach ◽  
Jack M. Blakely
Keyword(s):  
Electron Microscope ◽  
Aspect Ratio ◽  
Transmission Electron Microscope ◽  
Normal Incidence ◽  
Incidence Geometry ◽  
Pattern Transfer ◽  
Si Substrate ◽  
Ion Etching ◽  
Transmission Electron ◽  
Thermal Oxide

AbstractA conventional ion mill used for thinning transmission electron microscope samples has been used to produce nanoscale surface corrugations on the thermal oxide of Si. Using Ar ions with energies from 1.1 to 2.5 keV in an off-normal incidence geometry, the corrugations were produced with wavelengths from 30 to 80 nm and amplitudes of ~1 to 2 nm. The corrugated pattern in the oxide has been transferred to the underlying Si substrate by reactive ion etching, producing structures that have a much higher aspect ratio than the original corrugations.

Local Structure of Indium-Plated Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
Toshimichi Ito ◽  
Takashi Ooiwa ◽  
Takanobu Nagao ◽  
Akimitsu Hatta
Keyword(s):  
Fine Structure ◽  
Electron Microscope ◽  
Porous Silicon ◽  
Thermal Oxidation ◽  
Transmission Electron Microscope ◽  
Local Structure ◽  
Rutherford Backscattering Spectrometry ◽  
Oxidation States ◽  
Si Substrate ◽  
Transmission Electron

AbstractThe fine structure of porous silicon (PS) plated electro-chemically with indium at a low plating charge of 0.03 C/cm2 has been studied mainly using Rutherford backscattering spectrometry and a transmission electron microscope. The results obtained here show (1) that the amount of plated In atoms strongly depends on the oxidation states of the pore surfaces, (2) that the average In densities, the maximum of which is usually located near the PS - Si substrate interface, are typically larger than 1 % of the Si densities in the PS layers, and (3) that the plated In atoms are concentrated locally in pores larger in size. Two-step thermal oxidation of an In-plated PS specimen results in a structure of nm-sized Si crystallites surrounded mainly by Si oxide and In oxide.

Reactive Cluster Epitaxy: CoSi2 Nanoparticles on (111) Si

2000 ◽  
Vol 619 ◽  
Author(s):  
C.G. Zimmermann ◽  
M. Yeadon ◽  
M. Kleinschmit ◽  
R.S. Averback ◽  
J.M. Gibson
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
High Purity ◽  
Size Range ◽  
Ultrahigh Vacuum ◽  
Si Substrate ◽  
Cluster Deposition ◽  
Transmission Electron ◽  
Reactive Cluster

ABSTRACTThe formation of epitaxial CoSi2 islands of nanoscopic dimensions is reported using the technique of reactive cluster deposition. Co clusters in the size range 5-50nm were synthesized by sputtering a high purity Co target inside a UHV sputtering chamber. The clusters were then deposited on the reconstructed Si (111) surface. Upon annealing the particles reacted with the Si substrate to form epitaxial CoSi2.Our observations were made using a JEOL 200CX transmission electron microscope modified for in-situ sputtering and ultrahigh vacuum conditions.

A Reproducible Selective Stain for Cardiac Sarcoplasmic Reticulum

1974 ◽  
Vol 32 ◽  
pp. 214-215
Author(s):  
R. A. Waugh ◽  
J. R. Sommer
Keyword(s):  
Complex System ◽  
Electron Microscope ◽  
Sarcoplasmic Reticulum ◽  
Transmission Electron Microscope ◽  
Electron Microscopic ◽  
Cardiac Sarcoplasmic Reticulum ◽  
Transmission Electron

Cardiac sarcoplasmic reticulum (SR) is a complex system of intracellular tubules that, due to their small size and juxtaposition to such electron-dense structures as mitochondria and myofibrils, are often inconspicuous in conventionally prepared electron microscopic material. This study reports a method with which the SR is selectively “stained” which facilitates visualizationwith the transmission electron microscope.

Surface Structure of the Spores of Glugea Weissenbergi

1969 ◽  
Vol 27 ◽  
pp. 238-239
Author(s):  
Sanford H. Vernick ◽  
Anastasios Tousimis ◽  
Victor Sprague
Keyword(s):  
Electron Microscope ◽  
Surface Structure ◽  
Transmission Electron Microscope ◽  
Mature Spore ◽  
Spore Surface ◽  
Sectioned Material ◽  
Transmission Electron ◽  
Surface Detail

Recent electron microscope studies have greatly expanded our knowledge of the structure of the Microsporida, particularly of the developing and mature spore. Since these studies involved mainly sectioned material, they have revealed much internal detail of the spores but relatively little surface detail. This report concerns observations on the spore surface by means of the transmission electron microscope.

A New High Resolution Transmission Electron Microscope with Second-Zone Objective Lens

1969 ◽  
Vol 27 ◽  
pp. 176-177 ◽  
Author(s):  
H. Tochigi ◽  
H. Uchida ◽  
S. Shirai ◽  
K. Akashi ◽  
D. J. Evins ◽  
...  
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Transmission Electron Microscope ◽  
Objective Lens ◽  
High Excitation ◽  
Transmission Electron ◽  
New Instrument

A New High Excitation Objective Lens (Second-Zone Objective Lens) was discussed at Twenty-Sixth Annual EMSA Meeting. A new commercially available Transmission Electron Microscope incorporating this new lens has been completed.Major advantages of the new instrument allow an extremely small beam to be produced on the specimen plane which minimizes specimen beam damages, reduces contamination and drift.

X-ray microanalysis of thin specimens in the transmission electron microscope at voltages up to 1000 Kv.

1978 ◽  
Vol 36 (1) ◽  
pp. 540-541
Author(s):  
G. Cliff ◽  
M.J. Nasir ◽  
G.W. Lorimer ◽  
N. Ridley
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Weight Fraction ◽  
Present Series ◽  
Constant Independent ◽  
X Ray ◽  
Transmission Electron ◽  
Series Of Experiments ◽  
Image Position ◽  
X Ray Absorption

In a specimen which is transmission thin to 100 kV electrons - a sample in which X-ray absorption is so insignificant that it can be neglected and where fluorescence effects can generally be ignored (1,2) - a ratio of characteristic X-ray intensities, I1/I2 can be converted into a weight fraction ratio, C1/C2, using the equationwhere k12 is, at a given voltage, a constant independent of composition or thickness, k12 values can be determined experimentally from thin standards (3) or calculated (4,6). Both experimental and calculated k12 values have been obtained for K(11<Z>19),kα(Z>19) and some Lα radiation (3,6) at 100 kV. The object of the present series of experiments was to experimentally determine k12 values at voltages between 200 and 1000 kV and to compare these with calculated values.The experiments were carried out on an AEI-EM7 HVEM fitted with an energy dispersive X-ray detector.

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