Copper Film Deposition Using H and O Atoms

1992 ◽  
Vol 260 ◽  
Author(s):  
Judith Ann Halstead ◽  
Peter S. Locke ◽  
Robert R. Reeves
Keyword(s):  
Oxygen Atom ◽  
Copper Oxide ◽  
Copper Complex ◽  
Room Temperature ◽  
Copper Complexes ◽  
Copper Film ◽  
Subsequent Treatment ◽  
Film Deposition ◽  
Reaction Process ◽  
Copper Films

ABSTRACTThe formation of thin copper films by H-atom reaction with Cu(FOD)2 and Cu(HFA)2 has been demonstrated at near room temperature. Oxygen atoms have now also been reacted with these β-diketonate copper complexes, producing films of copper oxide which can be readily reduced by subsequent treatment with H-atoms. The thin copper films produced are conductive and highly adherent. The oxygen atom reaction with the copper complex produces a visible chemiluminescent glow, yielding information on the nature of the reaction process.

Room Temperature Self-Annealing of Electroplated and Sputtered Copper Films

1999 ◽  
Vol 562 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Copper Film ◽  
Copper Films ◽  
Organic Additives ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electroplated Copper ◽  
Effect Of Copper

ABSTRACTSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.

Copper Film Deposition by Hydrogen Atom Reactions with Copper Compounds

1990 ◽  
Vol 203 ◽  
Author(s):  
Hongwen Li ◽  
Robert R. Reeves
Keyword(s):  
Metal Film ◽  
Copper Film ◽  
Film Deposition ◽  
Copper Films ◽  
Hydrogen Atoms ◽  
Good Adhesion ◽  
Metal Compounds ◽  
Copper Compounds ◽  
Substrate Temperatures ◽  
Purity Copper

ABSTRACTA novel low temperature CVD process - atom reaction CVD process for metal film depositions has been developed by using hydrogen atoms reacting with metal compounds. High purity copper films, with low resistivity of ∼ 2 μΩ cm, good step coverage to submicron holes and good adhesion to various substrates, were obtained by using this process with Cu(HFA)2 source at substrate temperatures below 150 °C.

Room Temperature Self-Annealing of Electroplated and Sputtered Copper Films

1999 ◽  
Vol 564 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Copper Film ◽  
Copper Films ◽  
Organic Additives ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electroplated Copper ◽  
Effect Of Copper

AbstractSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.

Room-Temperature UHV-Deposited Titanium Monoxide Films on Oxidized Polycrystalline Copper

2001 ◽  
Vol 672 ◽  
Author(s):  
V. M. Fuenzalida ◽  
C. R. Grahmann ◽  
C. Herrera ◽  
R. A. Zárate ◽  
C. Avila ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Copper Substrate ◽  
Copper Film ◽  
Copper Surface ◽  
Native Oxide ◽  
Titanium Monoxide ◽  
Copper Films ◽  
Polycrystalline Copper ◽  
Tungsten Boat

ABSTRACTPolycrystalline copper films thicker than 100 nm were evaporated on silicon wafers with their native oxide under ultrahigh vacuum conditions leading to an rms roughness of ~2 nm of the copper film. X-ray photoelectron spectroscopy (XPS) revealed a clean copper surface with only traces of oxygen. The samples were exposed to air, leading to an oxide film consisting of CuO. TiO films were subsequently deposited onto the oxidized copper films from a resistively heated tungsten boat with the substrate at room temperature. The TiO films exhibited good adherence and were amorphous. XPS measurements revealed that the TiO films were contamination-free and that the first layers of TiO reduced the thin native oxide of the copper substrate from Cu(II) into Cu(I) or Cu(0) and transformed the TiO into TiO2 at the interface.

Preparation and Characterization of Copper Film on Plastic Substrate by ECR-MOCVD Coupled with a DC Bias

2004 ◽  
Vol 812 ◽  
Author(s):  
Bup Ju Jeon ◽  
Joong Kee Lee
Keyword(s):  
Cyclotron Resonance ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Copper Film ◽  
Plastic Substrate ◽  
Copper Films ◽  
Dc Bias ◽  
Plastic Matrix ◽  
Fine Copper

AbstractCopper films were prepared at room temperature under a Cu(hfac)2-Ar-H2 atmosphere in order toobtain metallized plastics by using ECR-MOCVD (Electron Cyclotron Resonance Metal OrganicChemical Vapor Deposition) coupled with a DC bias system. Structural analysis of the films byECR showed that fine copper grains were embedded in an amorphous plastic matrix with goodadherence. Considering the AES result of the film prepared by ECR-CVD, we construe that thecopper film is chemically bonded with a plastic substrate. The delamination force determined bythe nano-scratch tester® showed in the range from 10 to 20mN.

Conformation and electronic structure of aromatic chloroformates

1987 ◽  
Vol 52 (4) ◽  
pp. 970-979 ◽  
Author(s):  
Otto Exner ◽  
Pavel Fiedler
Keyword(s):  
Electronic Structure ◽  
Oxygen Atom ◽  
Strong Interaction ◽  
Electron Distribution ◽  
Room Temperature ◽  
Functional Group ◽  
Dipole Moments ◽  
Carbonyl Oxygen ◽  
Nonpolar Solvents ◽  
Single Method

Aromatic chloroformates Ib-Ie were shown to exist in the ap conformation, in agreement with aliphatic chloroformates, i.e. the alkyl group is situated cis to the carbonyl oxygen atom as it is the case in all esters. While 4-nitrophenyl chloroformate (Ie) is in this conformation in crystal, in solution at most several tenths of percent of the sp conformation may be populated at room temperature and in nonpolar solvents only. A new analysis of dipole moments explained the previous puzzling results and demonstrated the impossibility to determine the conformation by this single method, in consequence of the strong interaction of adjoining bonds. If, however, the ap conformation is once proven, the dipole moments reveal some features of the electron distribution on the functional group, characterized by the enhanced polarity of the C-Cl bond and reduced polarity of the C=O bond. This is in agreement with the observed bond lengths and angles.

Macroscale synthesis of CuO nanowires on FTO plane substrate

2019 ◽  
Vol 33 (11) ◽  
pp. 1950138 ◽  
Author(s):  
Yota Mabuchi ◽  
Rashid Norhana Mohamed ◽  
Xuyang Li ◽  
Jianbo Liang ◽  
Naoki Kishi ◽  
...  
Keyword(s):  
Copper Oxide ◽  
Tin Oxide ◽  
Copper Film ◽  
Entire Region ◽  
Cuo Nanowires

This study aims to fabricate copper oxide (CuO) nanowires by annealing a copper film formed on a charged film of fluorine-doped tin oxide (FTO). However, from the viewpoint of stress and growth of nanowires, it is difficult to mass-produce CuO nanowires on the entire region of the macro area on the plane substrate. In the proposed study, this was made possible by modifying the substrate’s structure.

Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application

2009 ◽  
Vol 154 ◽  
pp. 95-100 ◽  
Author(s):  
Seiichi Miyazaki ◽  
Mitsuhisa Ikeda ◽  
Katsunori Makihara ◽  
K. Shimanoe ◽  
R. Matsumoto
Keyword(s):  
Surface Potential ◽  
Room Temperature ◽  
Areal Density ◽  
Film Deposition ◽  
Floating Gate ◽  
Metal Silicide ◽  
Kelvin Probe ◽  
Measuring Surface ◽  
Surface Potential Measurements ◽  
Mis Capacitors

We demonstrated a new fabrication method of Pt- and Ni-silicide nanodots with an areal density of the order of ~1011 cm-2 on SiO2 through the process steps of ultrathin metal film deposition on pre-grown Si-QDs and subsequent remote H2 plasma treatments at room temperature. Verification of electrical separation among silicide nanodots was made by measuring surface potential changes due to electron injection and extraction using an AFM/Kelvin probe technique. Photoemission measurements confirm a deeper potential well of silicide nanodots than Si-QDs and a resultant superior charge retention was also verified by surface potential measurements after charging to and discharging. Also, the advantage in many electron storage per silicide nanodot was demonstrated in C-V characteristics of MIS capacitors with silicide nanodots FGs.

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