A new method for the simultaneous determination of the surface-carrier mobility and the metal-semiconductor work-function difference in MOS transistors

1988 ◽  
Vol 35 (4) ◽  
pp. 439-443 ◽  
Author(s):  
B. Majkusiak ◽  
A. Jakubowski
Keyword(s):  
Work Function ◽  
Simultaneous Determination ◽  
Carrier Mobility ◽  
New Method ◽  
Mos Transistors ◽  
Work Function Difference ◽  
Function Difference

scholarly journals Work function difference of naphthyl end-capped oligothiophene in different crystal alignments studied by Kelvin probe force microscopy

2020 ◽  
pp. 106060
Author(s):  
Mads Nibe Larsen ◽  
Mads Svanborg Peters ◽  
Rodrigo Lemos-Silva ◽  
Demetrio A. Da Silva Filho ◽  
Bjarke Jørgensen ◽  
...  
Keyword(s):  
Work Function ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Work Function Difference ◽  
Function Difference

scholarly journals Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3166
Author(s):  
Sayed Md Tariful Azam ◽  
Abu Saleh Md Bakibillah ◽  
Md Tanvir Hasan ◽  
Md Abdus Samad Kamal
Keyword(s):  
Low Power ◽  
Work Function ◽  
Potential Candidate ◽  
Gate Electrodes ◽  
The Future ◽  
Work Function Difference ◽  
High Transconductance ◽  
Dual Material ◽  
Gate Work Function ◽  
Function Difference

In this study, we theoretically investigated the effect of step gate work function on the InGaAs p-TFET device, which is formed by dual material gate (DMG). We analyzed the performance parameters of the device for low power digital and analog applications based on the gate work function difference (∆ϕS-D) of the source (ϕS) and drain (ϕD) side gate electrodes. In particular, the work function of the drain (ϕD) side gate electrodes was varied with respect to the high work function of the source side gate electrode (Pt, ϕS = 5.65 eV) to produce the step gate work function. It was found that the device performance varies with the variation of gate work function difference (∆ϕS-D) due to a change in the electric field distribution, which also changes the carrier (hole) distribution of the device. We achieved low subthreshold slope (SS) and off-state current (Ioff) of 30.89 mV/dec and 0.39 pA/µm, respectively, as well as low power dissipation, when the gate work function difference (∆ϕS-D = 1.02 eV) was high. Therefore, the device can be a potential candidate for the future low power digital applications. On the other hand, high transconductance (gm), high cut-off frequency (fT), and low output conductance (gd) of the device at low gate work function difference (∆ϕS-D = 0.61 eV) make it a viable candidate for the future low power analog applications.

Measurement of work function difference between Pb/Si(111) and Pb/Ge/Si(111) by high-order Gundlach oscillation

2013 ◽  
Vol 114 (21) ◽  
pp. 214308 ◽  
Author(s):  
Hsu-Sheng Huang ◽  
Wen-Yuan Chan ◽  
Wei-Bin Su ◽  
Germar Hoffmann ◽  
Chia-Seng Chang
Keyword(s):  
Work Function ◽  
High Order ◽  
Work Function Difference ◽  
Function Difference
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