Effect of Boron and Phosphorus Ion Implantation on a-SixC1-x:H Thin Films

1992 ◽  
Vol 258 ◽  
Author(s):  
F. Demichelis ◽  
R. Galloni ◽  
C. F. Pirri ◽  
R. Rizzolid ◽  
C. Summonte ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Ir Spectroscopy ◽  
Ion Implantation ◽  
Gas Phase ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Vacuum Plasma

ABSTRACTIon implantation of boron and phosphorus in device quality a-SixC1-x:H films deposited by Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition (UHV PECVD) has been performed. The effects of damage and of damage recovering after annealing were investigated by optical absorption, electrical conductivity and infrared (IR) spectroscopy measurements. It is found that samples doped by phosphorus implantation can have dark conductivities as high as those obtained on samples doped with boron, either by ion implantation or gas phase.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Aluminum Chemical Vapor Deposition Using Triisobutylaluminum: Mechanism, Kinetics, and Deposition Rates at Steady State

1988 ◽  
Vol 131 ◽  
Author(s):  
Brian E. Bent ◽  
Lawrence Dubois ◽  
Ralph G. Nuzzo
Keyword(s):  
Chemical Vapor Deposition ◽  
Kinetic Parameters ◽  
Gas Phase ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Aluminum Atom ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Aluminum Surface

ABSTRACTAn important step in the chemical vapor deposition (CVD) of aluminum from triisobutylaluminum (TIBA) is the reaction between TIBA (adsorbed from the gas phase) and the growing aluminum surface. We have studied this chemistry by impinging TIBA under collisionless conditions in an ultra-high vacuum system onto single crystal Al(111) and Al(100) substrates. We find that when TIBA (340K) collides with an aluminum surface heated to between 500 and 600K, the aluminum atom is cleanly abstracted from this precursor with near unit reaction probability to deposit, epitaxially, carbon-free aluminum films. The gas phase products are isobutylene and hydrogen. From monolayer thermal desorption experiments, we have determined the kinetic parameters for the rate-determining step, a β-hydride elimination reaction by surface bound isobutyl ligands. Using these kinetic parameters and a Langmuir absorption model, we can predict the rate of aluminum deposition at pressures ranging from 10−6 to 1 Torr.

Challenge to 200 mm 3C-SiC Wafers Using SOI

2005 ◽  
Vol 483-485 ◽  
pp. 205-208 ◽  
Author(s):  
Motoi Nakao ◽  
Hirofumi Iikawa ◽  
Katsutoshi Izumi ◽  
Takashi Yokoyama ◽  
Sumio Kobayashi
Keyword(s):  
Cross Section ◽  
Vapor Deposition ◽  
Seed Layer ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Average Thickness ◽  
Entire Region ◽  
Transmission Electron ◽  
Good Crystallinity

200 mm wafer with 3C-SiC/SiO2/Si structure has been fabricated using 200 mm siliconon- insulator (SOI) wafer. A top Si layer of 200 mm SOI wafer was thinned down to approximately 5 nm by sacrificial oxidization, and the ultrathin top Si layer was metamorphosed into a 3C-SiC seed layer using a carbonization process. Afterward, an epitaxial SiC layer was grown on the SiC seed layer with ultra-high vacuum chemical vapor deposition. A cross-section transmission electron microscope indicated that a 3C-SiC seed layer was formed directly on the buried oxide layer of 200 mm wafer. The epitaxial SiC layer with an average thickness of approximately 100 nm on the seed was recognized over the entire region of the wafer, although thickness uniformity of the epitaxial SiC layer was not as good as that of SiC seed layer. A transmission electron diffraction image of the epitaxial SiC layer showed a monocrystalline 3C-SiC(100) layer with good crystallinity. These results indicate that our method enables to realize 200 mm SiC wafers.

Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor deposition

2019 ◽  
Vol 507 ◽  
pp. 113-117 ◽  
Author(s):  
Jiaqi Wang ◽  
Limeng Shen ◽  
Guangyang Lin ◽  
Jianyuan Wang ◽  
Jianfang Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum
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