A New Method of Depositing Amorphous Hydrogenated Silicon Carbide with Low Ir-Detected Microstructure

1992 ◽  
Vol 258 ◽  
Author(s):  
Hsueh Yi Lu ◽  
Mark A. Petrich
Keyword(s):  
Silicon Carbide ◽  
Electrode Potential ◽  
Chemical Vapor ◽  
Band Gaps ◽  
New Method ◽  
Film Properties ◽  
Hydrogenated Silicon ◽  
Dc Voltage ◽  
Optical Band Gaps ◽  
Amorphous Hydrogenated Silicon

ABSTRACTWe report a new method of depositing amorphous hydrogenated silicon carbide thin films with low IR-detected microstructure in a plasma-enhanced chemical vapor deposition reactor. Films prepared at various conditions are studied with Fourier-transform infrared absorption. Their optical band gaps and photoconductivities are also measured. The amount of microstructure can be controlled by adjusting the powered-electrode potential during deposition, and the microstructural changes are reflected in the film properties. By applying an external dc voltage to the rf-excited powered electrode, we can shift the optimal deposition temperature from 250 °C to as low as 100 °C. We find that films deposited at positive powered-electrode potential and low substrate temperature exhibit less microstructure, wider optical band gaps, and faster deposition rates than films deposited at conventional conditions.

Amorphous Hydrogenated Silicon Carbide Prepared from DC-Biased RF-Plasma-Enhanced Chemical Vapor Deposition

1991 ◽  
Vol 219 ◽  
Author(s):  
Hsueh Yi Lu ◽  
Mark A. Petrich
Keyword(s):  
Silicon Carbide ◽  
Carbon Content ◽  
Plasma Deposition ◽  
Chemical Vapor ◽  
Plasma Potential ◽  
Rf Plasma ◽  
Hydrogenated Silicon ◽  
Optical Band Gaps ◽  
Amorphous Hydrogenated Silicon ◽  
Dc Bias

ABSTRACTWe present evidence that an independently applied dc bias voltage has a significant effect on the plasma deposition of amorphous hydrogenated silicon carbide. Deposition rates increase with either positive or negative dc voltages applied to the powered rf electrode. The microstructure of the films (as determined by infrared absorption) can be reduced by increasing the plasma potential (positive dc bias voltages). Negative dc biases, or excessively high positive biases, result in increased amounts of film microstructure. Film carbon content is increased when positive biases are applied, but the optical band gaps decrease suggesting increased amounts of graphitic bonding configurations. Negative biases do not change the carbon content of the films, but do increase both deposition rate and microstructure.

Observation of Blue Emission from ECR-CVD Deposited Amorphous Hydrogenated Silicon Carbide

1999 ◽  
Vol 593 ◽  
Author(s):  
J. Cui Rusli ◽  
S. F. Yoon ◽  
M. B. Yu ◽  
K. Chew ◽  
J. Ahn ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Cyclotron Resonance ◽  
Blue Emission ◽  
Chemical Vapor ◽  
Flat Panel Displays ◽  
Large Area ◽  
Static Disorder ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Ion Laser

ABSTRACTAmorphous hydrogenated silicon carbide (a-Sil-xCx:H) thin films have been deposited by the electron cyclotron resonance chemical vapor deposition (ECR-CVD) technique at different microwave powers from 100W to 1000W. The films were characterized in terms of their optical absorption and photoluminescence (PL). Their optical band gap E04 ranged from 3.06eV to 3.54eV and when excited at 363.8nm from an Ar+ ion laser, the PL peak emission energy Epl, was found to range from 2.44eV to 2.79eV, corresponding to green to blue emission. The effects of excitation energy Eex, on Epl, and FWHM of the PL spectra were also investigated. A linear relation between the FWHM and Urbach tail width E0was noted, suggesting that the PL bandwidth is mainly contributed by static disorder. The blue emission observed in these a-S1-x-Cx:H films is promising for their applications in large area flat panel displays.

Structural and morphological investigation of amorphous hydrogenated silicon carbide

2001 ◽  
Vol 34 (4) ◽  
pp. 465-472 ◽  
Author(s):  
R. J. Prado ◽  
M. C. A. Fantini ◽  
I. Pereyra ◽  
G. Y. Odo ◽  
C. M. Lepienski
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Infrared Spectrometry ◽  
Morphological Investigation ◽  
Hydrogenated Silicon ◽  
X Ray ◽  
Hydrogen Dilution ◽  
Amorphous Hydrogenated Silicon ◽  
Deposition Parameters ◽  
Transmission Electron

Amorphous hydrogenated silicon carbide thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) at temperatures ranging from 573 to 623 K, with different concentrations of silane and methane, exploring two deposition parameters: the radio frequency (r.f.) power and the hydrogen dilution. The aim of the work was to induce, predominantly, the formation of Si—C heteronuclear bonds in a homogeneous network. The composition was determined by Rutherford backscattering and the chemical bonding by Fourier transform infrared spectrometry. The local structural order was analyzed by means of extended X-ray absorption fine structure at the SiKedge. The morphology was investigated by small-angle X-ray scattering in order to determine the possible presence of voids in the amorphous matrix. The morphological investigation was completed by transmission electron microscopy. Better-structured films were obtained for a composition close to stoichiometry, grown with an r.f. power of 100 W and with 300 s.c.c.m. (standard cubic centimeter per minute) of hydrogen dilution.

Initial results and long-term clinical follow-up of an amorphous hydrogenated silicon-carbide-coated stent in daily practice

1998 ◽  
Vol 1 (2) ◽  
pp. 81-85
Author(s):  
Clara EE Hanekamp ◽  
Hans JRM Bonnier ◽  
Rolf H Michels ◽  
Kathinka H Peels ◽  
Eric PCM Heijmen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Daily Practice ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Initial Results

Blue Shifting of Hydrogenated Silicon Carbide Multiple Quantum Wells

2011 ◽  
Vol 480-481 ◽  
pp. 629-633
Author(s):  
Wen Teng Chang ◽  
Yu Ting Chen ◽  
Chung Chin Kuo
Keyword(s):  
Silicon Carbide ◽  
Quantum Wells ◽  
Quantum Confinement Effect ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Plasma Chemical ◽  
Hydrogenated Silicon ◽  
Plasma Chemical Vapor Deposition

Five-period hydrogenated silicon carbide (SiC) multiple quantum wells with silicon dioxide (SiO2) or silicon nitride (SiN) dielectric that were synthesized by high density plasma chemical vapor deposition were studied using photoluminescence (PL) spectroscopy to understand its blue shift. Rapid thermal annealing induced significant blue shifting in the PL spectra after fluorine ion implantation due to crystallization. The thinning of the SiC causes blue shift due to the quantum confinement effect. The higher PL intensity of the amorphous SiC:H in SiO2 than in SiC/SiN may be attributed to the high number of non-radiative sites on its surface. Annealing with nitrogen may cause impurities in SiC/SiO2, thereby broadening the PL peak.

DEPOSITION-AND-SUBSTRATE TUNABLE PHOTONIC BANDGAP IN OPTICAL RESPONSES OF HYDROGENATED AMORPHOUS SILICON CARBIDE THIN FILMS

2003 ◽  
Vol 17 (09) ◽  
pp. 387-392 ◽  
Author(s):  
NIKIFOR RAKOV ◽  
ARSHAD MAHMOOD ◽  
MUFEI XIAO
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Photonic Bandgap ◽  
Visible Spectrum ◽  
Incoherent Light ◽  
Hydrogenated Silicon ◽  
Optical Responses ◽  
Amorphous Hydrogenated Silicon ◽  
The Status ◽  
Two Parameters

Amorphous hydrogenated silicon carbide (a-SiC:H) thin films have been prepared by the RF reactive magnetron sputtering technique. The optical properties of the films have been studied by optical spectroscopy with an incoherent light source. The material is commonly regarded as a dielectric. We have discovered however that some films that were prepared under certain deposition conditions and on certain substrates may respond to external light as a metallic thin film, i.e. there are strongly enhanced reflection peaks in the optical spectrum. We have further discovered that some films may have a strong and broadened absorption peak at about 590 nm, which is an apparent photonic bandgap in the visible spectrum. The appearance of the photonic bandgap is very sensitive to two parameters: the substrate and the deposition gas. By changing the two parameters, one shifts the status of the film from with and without the photonic bandgap.

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