Macro-Trench Studies of Surface Reaction Probability of a-Si:H Film Growth

1992 ◽  
Vol 258 ◽  
Author(s):  
A. Nuruddin ◽  
J. R. Doyle ◽  
J. R. Abelson
Keyword(s):  
Hollow Cathode ◽  
Surface Reaction ◽  
Film Growth ◽  
State Of The Art ◽  
Sputter Deposition ◽  
Reactive Magnetron ◽  
High Quality ◽  
Mitigating Factors ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

ABSTRACTUsing a “macro-trench” technique, the surface reaction probabilities β of the a-Si:H growth precursors for remote hollow cathode silane discharge (HC) and reactive magnetron sputter deposition (RMS) are measured. Both deposition methods produce state of the art photo-electronic quality a-Si:H. For the HC case, β= 0.28 ± 0.05, whereas for RMS deposition β ≈ 0.97 ± 0.05. We conclude that β is not universally correlated with film quality, and discuss mitigating factors present in RMS deposition that permit high quality film to be deposited despite the high film precursor reactivity.

Ion-assisted low-temperature (≤ 150 °C) epitaxial growth of TiN on Cu by reactive magnetron sputter deposition

1996 ◽  
Vol 287 (1-2) ◽  
pp. 87-92 ◽  
Author(s):  
H. Ljungcrantz ◽  
S. Benhenda ◽  
G. Håkansson ◽  
I. Ivanov ◽  
L. Hultman ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Sputter Deposition ◽  
Reactive Magnetron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

1993 ◽  
Vol 8 (10) ◽  
pp. 2613-2616 ◽  
Author(s):  
Jennifer Ross ◽  
Mike Rubin ◽  
T.K. Gustafson
Keyword(s):  
Single Crystal ◽  
Growth Conditions ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Reactive Sputter Deposition ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Aln Buffer

We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AlN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550 and 620 °C. However, using a high temperature 200 Å AlN buffer layer epitaxial GaN is produced. Crystal structure and quality are measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AlN buffer layers by any growth technique. Simple AlN/GaN heterostructures grown by rf reactive sputter deposition on (111) GaAs are also demonstrated.

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