Hydrogenated Amorphous Silicon/Aluminum Interaction at Low Temperatures

1992 ◽  
Vol 258 ◽  
Author(s):  
M. Shahidul Haque ◽  
H. A. Naseem ◽  
W. D. Brown ◽  
S. S. Ang
Keyword(s):  
Sheet Resistance ◽  
Low Temperatures ◽  
Annealing Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Contact Resistivity ◽  
Electrical Behavior ◽  
Transmission Line Model ◽  
Annealing Effects ◽  
Hydrogenated Amorphous ◽  
Annealing Sheet

ABSTRACTAnnealing effects on the Al/a-Si:H structure in the temperature range 100°C to 300°C have been studied. Aluminum was evaporated on device quality phosphorous doped n+ a-Si:H films deposited in a UHV-PECVD system. The transmission line model (TLM) technique was used to measure the sheet resistance and contact resistivity of the films. For samples where Al covered the entire a-Si:H surface during annealing, sheet resistance and contact resistivity were found to decrease monotonically with annealing temperature. On the other hand, samples annealed after patterning Al pads showed a minimum in sheet resistance and contact resistivity at temperatures between 170°C and 200°C with a steep increase beyond 250°C. Optical and scanning electron microscopy, as well as surface profilometry, were used to study the surface morphology. A simple model involving Al interaction with the a-Si:H at the surface is proposed to explain the electrical behavior.

Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

1991 ◽  
Vol 219 ◽  
Author(s):  
Gaorong Han ◽  
Jianmin Qiao ◽  
Piyi Du ◽  
Zhonghua Jiang ◽  
Zishang Ding
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Spin Density ◽  
Molecular Hydrogen ◽  
Annealing Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Sulphur Content ◽  
Defect States ◽  
Hydrogenated Amorphous

ABSTRACTWe have presented ESR and PAS measurements for a series of a-SiS:H and a-Si: H films deposited by glow discharge at different parameters. The spin density in a-SiS:H alloys measured by ESR is essentially independent of the sulphur content, while the density of defects measured by PAS increases significantly with the increasing of sulphur content. The ESR signals in a-SiS:H alloys strongly depend on both annealing and illumination. The spin density increases up to 540°C and then decreases with raising annealing temperature for a-SiS:H and a-Si:H alloys. The results suggest that some new defects such as molecular hydrogen and microvoids are appeared when addition of sulphur to a-Si:H films.

Transient Infrared Stimulated Photoconductivity in a-SI:H at Low Temperatures

1995 ◽  
Vol 377 ◽  
Author(s):  
S. Heck ◽  
P. Stradins ◽  
H. Fritzsche
Keyword(s):  
Energy Loss ◽  
Amorphous Silicon ◽  
Time Resolution ◽  
Low Temperatures ◽  
Hydrogenated Amorphous Silicon ◽  
Infrared Light ◽  
Dual Beam ◽  
Tunneling Recombination ◽  
Hydrogenated Amorphous

ABSTRACTDual beam photoconductivity with bandgap primary light and hv = 0.4- 0.6eV infrared light steps was measured with Ims time resolution in hydrogenated amorphous silicon (a-Si:H) at 4.2K. The results can be described by assuming that the photocurrent transients are due to energy-loss hopping of photocarriers and that the infrared light promotes recombination by reexciting photocarriers thereby enhancing the probability of tunneling recombination.

CORRELATION BETWEEN Er3+ EMISSION AND THE MICROSTRUCTURE OF A-SiOx:H FILMS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4246-4249 ◽  
Author(s):  
C. Y. CHEN ◽  
W. D. CHEN ◽  
S. F. SONG ◽  
C. C. HSU
Keyword(s):  
Amorphous Silicon ◽  
Strong Influence ◽  
Annealing Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Suboxide ◽  
Two Phases ◽  
Hydrogenated Amorphous ◽  
Intrinsic Emission ◽  
Hydrogen Effusion

Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide ( a - SiO X : H 〈 Er 〉( x <2.0)) films was measured. Two luminescence bands with maxima at λ ≅ 750 nm and λ ≅ 1.54μ m, ascribed to the a - SiO x : H intrinsic emission and Er 3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000°C. Micro-Raman results indicate that the a - SiO x : H < Er > films are a mixture of two phases, an amorphous SiO x matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a - SiO x : H < Er > films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er 3+ emission. Our study emphasizes the role of a-Si domains on Er 3+ emission in a - SiO x : H < Er > films.

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