Tellurium and Palladium Diffusion in the German Waste Glass Vg 98/12 Measured with the Rbs Method

1991 ◽  
Vol 257 ◽  
Author(s):  
M. Yamashita ◽  
Hj. Matzke ◽  
G. Linker
Keyword(s):  
Basic Property ◽  
Annealing Time ◽  
Diffusion Coefficients ◽  
Heat Treatments ◽  
Rutherford Backscattering ◽  
Waste Glass ◽  
Surface Evaporation ◽  
Limited Solubility

ABSTRACTThe diffusion of Te and Pd was measured in the German waste glass VG 98/012 usingion implantation to introduce these elements, and the Rutherford backscattering (RBS) method to measure their diffusion. Both elements tend to precipitate during manufacture ofnuclear waste glasses, and the Te-content of the precipitates depends on the annealing time. Diffusion of these elements is a basic property of the separation phenomenon. Diffusion of both elements was found to be very slow. Te-diffusion coefficients were in the range of 10-17 to 10-15 cm2s-1 between 540 and 590 αC. Surface evaporation of Te was observed at all heat treatments. Pd diffusion was not observed in this study, most likely due to limited solubility of Pd and formation of metal precipitates.

Phase growth and microstructure modifications induced by annealing in highly textured superconducting Bi-2212 thin rods

2000 ◽  
Vol 15 (3) ◽  
pp. 614-620 ◽  
Author(s):  
M. Mora ◽  
E. Martínez ◽  
J. C. Díez ◽  
L. A. Angurel ◽  
G. F. de la Fuente
Keyword(s):  
Physical Properties ◽  
Directional Solidification ◽  
Annealing Time ◽  
Diffusion Processes ◽  
Heat Treatments ◽  
Phase Content ◽  
Phase Growth

Bi-2212 cylindrical rods were obtained using a laser-induced directional solidification system. Although as-grown Bi-2212 samples are well textured, they do not exhibit superconducting behavior and, as a result, need further heat treatments. The modifications taking place during annealing were analyzed in the present work, in particular with respect to the evolution of the microstructure with the annealing time and the phase content. Diffusion processes in which the Bi-2212 phase grows along the thickness of the platelets take place during annealing. The presented results show that the physical properties of these samples improve during the initial approximately 60 h of annealing and that they remain constant thereafter.

Rutherford Backscattering Spectrometry Studies on Copper and Chromium Diffusion in Polyimide

1989 ◽  
Vol 153 ◽  
Author(s):  
Kyung W. Paik ◽  
Arthur L. Ruoff
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Coefficients ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Annealing Treatment ◽  
Rutherford Backscattering ◽  
Fickian Diffusion ◽  
Chromium Diffusion ◽  
Diffusion Behavior ◽  
Slight Amount

AbstractDiffusion of Cu in polyimide(PI) film was observed after Cu evaporation on PI at room temperature. Annealing treatment significantly enhanced the diffusion of Cu. The diffusion coefficient measured at 200 and 400 C using the Fickian erfc solution are 3 × 10−14 and 1 × 10−13 cm2/sec, respectively. Cu shows the Fickian diffusion behavior. In contrast to Cu, no clearly measurable diffusion had occurred for an as-deposited Cr specimen and a specimen annealed at 400 C for 1 hour. However, for longer annealing times a slight amount of Cr diffused into PI because of the growth of the intermixed region. The diffusion coefficients of Cr at 200 and 400 C for less than 20 hours are 2 × 10−15 and 7 × 10−15 cm2/sec, respectively. The diffusion of Cr in PI shows non-Fickian behavior.

OPTIMIZATION OF DIFFUSION PROCESS FOR PRODUCTION OF SYSTEMS OF DIFFUSED-JUNCTION RECTIFIERS

2010 ◽  
Vol 24 (29) ◽  
pp. 5793-5806
Author(s):  
E. L. PANKRATOV
Keyword(s):  
Diffusion Process ◽  
Annealing Time ◽  
Diffusion Coefficients ◽  
Multilayer Structure ◽  
Bipolar Transistors ◽  
Dopant Distribution ◽  
The Difference ◽  
Junction Rectifiers

It has been recently shown that difference between diffusion coefficients of dopant in layers of a multilayer structure leads to increasing of sharpness of diffusion-junction rectifier (see, for example, E. L. Pankratov, Phys. Rev. B72(7), 075201 (2005); E. L. Pankratov and B. Spagnolo, Eur. Phys. J. B 46(1), 15 (2005).), which was formed in the multilayer structure after appropriate choosing of materials of layers. It has been also shown that the difference between the diffusion coefficients also leads to increasing of homogeneity of dopant distribution in doped area. In this paper, both the effects (together increasing of sharpness of p–n-junction and increasing of homogeneity of dopant distribution) have been used to produce a system of p–n-junctions (such as bipolar transistors). Annealing time has been optimized to increase simultaneously the sharpness and the homogeneity.

The Composition and Stability of Nicu Surface Alloys Grown by Ni(CO), Decomposition on Cu

1987 ◽  
Vol 111 ◽  
Author(s):  
Paul F.A. Alkemade ◽  
H. Fortuin ◽  
R. Balkenende ◽  
F. H. P. M. Habraken ◽  
W. F. Van Der Weg
Keyword(s):  
Grain Boundaries ◽  
Diffusion Coefficients ◽  
Diffusion Rate ◽  
Copper Substrate ◽  
Rutherford Backscattering ◽  
Sharp Interface ◽  
Rutherford Backscattering Spectroscopy ◽  
Surface Alloy ◽  
Surface Alloys ◽  
Nickel Carbonyl

AbstractThe composition of NiCu surface alloys, prepared by decomposition of nickel carbonyl on a Cu(100) surface, has been studied before as well as after annealing using MeV Rutherford Backscattering Spectroscopy.NiCu films with a thickness of 2 nm and of 10 nm, respectively, having a sharp interface with the copper substrate, were grown. The nickel fraction is found to be 65% and 93% respectively. The outermost monolayer is slightly enriched in copper. During annealing interdiffusion between the film and the interface occurs and the enrichment of the surface increases. In case of the 10 nm film the observed diffusion rate is much higher than is expected on the basis of diffusion coefficients published in the literature. This is ascribed to the presence of defects and/or grain boundaries in the grown surface alloy.

Diffusion of Ion Implanted Ruthenium and Osmium IN GaAs and InP

1993 ◽  
Vol 316 ◽  
Author(s):  
M. Kuttler ◽  
A. Knecht ◽  
D. Bimberg ◽  
H. Kräutle
Keyword(s):  
Structural Properties ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Diffusion Processes ◽  
Rutherford Backscattering ◽  
Uphill Diffusion ◽  
Secondary Ion Mass Spectroscopy ◽  
Depth Profiles ◽  
Annealing Procedure ◽  
Secondary Ion

ABSTRACTThe redistribution of the dopants Ru and Os implanted into GaAs and InP as well as the structural properties of the hosts are investigated in dependence of the annealing procedure. Results of Rutherford backscattering and secondary-ion-mass-spectroscopy experiments are presented. The RBS results of Os in GaAs annealed at 850°C indicate that an amount of about 1018 cm-3 Os is on substitutional sites. Two different diffusion processes are observed: an uphill diffusion in the amorphized region and a Fick-type diffusion in the tail of the depth profiles. The diffusion coefficients for Ru in GaAs at 850°C and Os in InP at 750°C are estimated to 4*10-14 cm2s-1 and 8*10-15 cm2s-1, respectively.

Simulated Waste Glass Corrosion in Humic Acid Solution using Rutherford Backscattering Spectrometry

2004 ◽  
Vol 41 (8) ◽  
pp. 837-842 ◽  
Author(s):  
Ikuji TAKAGI ◽  
Takayuki SASAKI ◽  
Kunio ASAHARA ◽  
Toru KAWASAKI ◽  
Takamitsu ISHIDERA ◽  
...  
Keyword(s):  
Humic Acid ◽  
Acid Solution ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Waste Glass ◽  
Glass Corrosion ◽  
Simulated Waste

Rutherford Backscattering Spectrometry Studies on Copper and Chromium Diffusion in Polyimide

1989 ◽  
Vol 154 ◽  
Author(s):  
Kyung W. Paik ◽  
Arthur L. Ruoff
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Coefficients ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Annealing Treatment ◽  
Rutherford Backscattering ◽  
Fickian Diffusion ◽  
Chromium Diffusion ◽  
Diffusion Behavior ◽  
Slight Amount

AbstractDiffusion of Cu in polyimide(PI) film was observed after Cu evaporation on PI at room temperature. Annealing treatment significantly enhanced the diffusion of Cu. The diffusion coefficient measured at 200 and 400 C using the Fickian erfc solution are 3 × 10−14 and 1 × 10−13 cm2/sec, respectively. Cu shows the Fickian diffusion behavior. In contrast to Cu, no clearly measurable diffusion had occurred for an as-deposited Cr specimen and a specimen annealed at 400 C for 1 hour. However, for longer annealing times a slight amount of Cr diffused into PI because of the growth of the intermixed region. The diffusion coefficients of Cr at 200 and 400 C for less than 20 hours are 2 × 10−15 and 7 × 10−15 cm2/sec, respectively. The diffusion of Cr in PI shows non-Fickian behavior.

Microstructure of Simulated High-Level Waste Glass Doped with Short-Lived Actinides, 238Pu and 244Cm

1991 ◽  
Vol 257 ◽  
Author(s):  
Y. Inagaki ◽  
H. Furuya ◽  
K. Idemitsu ◽  
T. Banba ◽  
S. Matsumoto ◽  
...  
Keyword(s):  
Volume Change ◽  
Annealing Time ◽  
Bubble Formation ◽  
Bubble Radius ◽  
Waste Glass ◽  
High Level Waste ◽  
Microstructural Changes ◽  
Bubble Density ◽  
Simulated Waste ◽  
High Level

ABSTRACTThe microstructural changes of a simulated waste glass irradiated with doping of 238pu and 244Cm were observed by use of a preshadowed carbon replica technique in combination with scanning electron microscopy (SEM). The irradiated glass was annealed and its microstructural changes after annealing were observed by use of the sametechnique.In the glass irradiated at a dose of 2.75x1025 α-decays/m3, bubbles with a radius from 0.15μrm to 0.35μm were observed. The average bubble radius and the bubble density were 0.23μm and 1x1017 bubbles/m3, respectively. Using these observed values, the volume change of the glass resulting from the bubble formation was estimated to be + 0.51 %. This valuoof + 0.51 % was close to the volume change of the irradiated glass measured in our previous study, which suggests a large portion of the volume change by α-irradiation results from bubble formation. In the glass annealed after irradiation the average bubbleradius was observed to decrease with annealing time. The bubble radius as a function of annealing time was analyzed on the basis of the helium diffusion model with two chemicalprocesses, i.e. trapping at bubbles and re-solution from bubbles into glass matrix. The values of the diffusion coefficient of helium, the trapping parameter and the re-solution parameter, which had been obtained experimentally in our previous study on the helium release, were applied to the calculation. The calculated curve was in good agreement with the observed data.

Influence of Heat Treatments on Microstructures in an Fe-Co-V Alloy

1974 ◽  
Vol 32 ◽  
pp. 512-513
Author(s):  
S. Mahajan ◽  
M. R. Pinnel ◽  
J. E. Bennett
Keyword(s):  
Single Phase ◽  
Alloy Composition ◽  
Supersaturated Solid Solution ◽  
Cell Formation ◽  
Heat Treatments ◽  
Air Cooling ◽  
Iced Brine ◽  
Transmission Electron ◽  
The Matrix ◽  
Bcc Structure

The microstructural changes in an Fe-Co-V alloy (composition by wt.%: 2.97 V, 48.70 Co, 47.34 Fe and balance impurities, such as C, P and Ni) resulting from different heat treatments have been evaluated by optical metallography and transmission electron microscopy. Results indicate that, on air cooling or quenching into iced-brine from the high temperature single phase ϒ (fcc) field, vanadium can be retained in a supersaturated solid solution (α2) which has bcc structure. For the range of cooling rates employed, a portion of the material appears to undergo the γ-α2 transformation massively and the remainder martensitically. Figure 1 shows dislocation topology in a region that may have transformed martensitically. Dislocations are homogeneously distributed throughout the matrix, and there is no evidence for cell formation. The majority of the dislocations project along the projections of <111> vectors onto the (111) plane, implying that they are predominantly of screw character.

Sign in / Sign up

Export Citation Format

Share Document