Rutherford Backscattering Spectrometry Studies on Copper and Chromium Diffusion in Polyimide

1989 ◽  
Vol 153 ◽  
Author(s):  
Kyung W. Paik ◽  
Arthur L. Ruoff
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Coefficients ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Annealing Treatment ◽  
Rutherford Backscattering ◽  
Fickian Diffusion ◽  
Chromium Diffusion ◽  
Diffusion Behavior ◽  
Slight Amount

AbstractDiffusion of Cu in polyimide(PI) film was observed after Cu evaporation on PI at room temperature. Annealing treatment significantly enhanced the diffusion of Cu. The diffusion coefficient measured at 200 and 400 C using the Fickian erfc solution are 3 × 10−14 and 1 × 10−13 cm2/sec, respectively. Cu shows the Fickian diffusion behavior. In contrast to Cu, no clearly measurable diffusion had occurred for an as-deposited Cr specimen and a specimen annealed at 400 C for 1 hour. However, for longer annealing times a slight amount of Cr diffused into PI because of the growth of the intermixed region. The diffusion coefficients of Cr at 200 and 400 C for less than 20 hours are 2 × 10−15 and 7 × 10−15 cm2/sec, respectively. The diffusion of Cr in PI shows non-Fickian behavior.

Rutherford Backscattering Spectrometry Studies on Copper and Chromium Diffusion in Polyimide

1989 ◽  
Vol 154 ◽  
Author(s):  
Kyung W. Paik ◽  
Arthur L. Ruoff
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Coefficients ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Annealing Treatment ◽  
Rutherford Backscattering ◽  
Fickian Diffusion ◽  
Chromium Diffusion ◽  
Diffusion Behavior ◽  
Slight Amount

AbstractDiffusion of Cu in polyimide(PI) film was observed after Cu evaporation on PI at room temperature. Annealing treatment significantly enhanced the diffusion of Cu. The diffusion coefficient measured at 200 and 400 C using the Fickian erfc solution are 3 × 10−14 and 1 × 10−13 cm2/sec, respectively. Cu shows the Fickian diffusion behavior. In contrast to Cu, no clearly measurable diffusion had occurred for an as-deposited Cr specimen and a specimen annealed at 400 C for 1 hour. However, for longer annealing times a slight amount of Cr diffused into PI because of the growth of the intermixed region. The diffusion coefficients of Cr at 200 and 400 C for less than 20 hours are 2 × 10−15 and 7 × 10−15 cm2/sec, respectively. The diffusion of Cr in PI shows non-Fickian behavior.

scholarly journals Determination of Diffusion Coefficients Using Thermogravimetric Measurements during High Temperature Oxidation

2012 ◽  
Vol 323-325 ◽  
pp. 289-294
Author(s):  
Patrice Berthod ◽  
Lionel Aranda
Keyword(s):  
Diffusion Coefficient ◽  
High Temperature ◽  
Diffusion Coefficients ◽  
High Temperature Oxidation ◽  
Concentration Profiles ◽  
Metallic Elements ◽  
Chromium Diffusion ◽  
Temperature Oxidation ◽  
Iron Based

Thermogravimetry measurements associated to concentration profiles allow determining a diffusion coefficient at high temperature of the most oxidable one among the metallic elements belonging to the chemical composition of an alloy. In this work the employed method is described and applied to chromia-forming alloys essentially based on nickel but also to selected cobalt-based and iron-based alloys. More precisely DCrvalues were estimated for chromium diffusing through the carbide-free zones developed during high temperature oxidation. The effects of the base element, of the chromium carbides density and of the dendritic orientations on the chromium diffusion were evidenced.

scholarly journals Photoluminescence Spectroscopy and Rutherford Backscattering Channeling Evaluation of Various Capping Techniques for Rapid Thermal Annealing of Ion-Implanted ZnSe

1994 ◽  
Vol 340 ◽  
Author(s):  
E.L. Allen ◽  
F.X. Zach ◽  
K.M. Yu ◽  
E.D. Bourret
Keyword(s):  
Optical Properties ◽  
Point Defects ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Rutherford Backscattering ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Ion Implanted

ABSTRACTWe report on the effectiveness of proximity caps and PECVD Si3N4 caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 × 1014 cm−2 N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200°C and 850°C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing time and temperature may be more important than capping material in determining the optical properties. The effects of various caps, implant and annealing temperature are discussed in terms of their effect on the photoluminescence spectra.

Determination of Hydrocarbons Using Sapphire Fibers Coated with Poly(Dimethylsiloxane)

2003 ◽  
Vol 57 (4) ◽  
pp. 400-406 ◽  
Author(s):  
Rhona Howley ◽  
B. D. MacCraith ◽  
Kieran O'Dwyer ◽  
Hugh Masterson ◽  
P. Kirwan ◽  
...  
Keyword(s):  
Film Thickness ◽  
Diffusion Model ◽  
Diffusion Coefficients ◽  
Molecular Size ◽  
Infrared Region ◽  
Sensor Response ◽  
Fickian Diffusion ◽  
Prototype System ◽  
Pdms Film ◽  
Diffusion Behavior

A poly(dimethylsiloxane) (PDMS) coated sapphire fiber has been investigated as a sensor for hydrocarbons (HCs) in the mid-infrared region around 3000 cm−1. In order to optimize and predict sensor response, the diffusion behavior of the analytes into the PDMS preconcentration medium has been examined. A diffusion model based on Fickian diffusion was used to quantify diffusion. The model incorporated such factors as film thickness, refractive index of the polymer and the fiber core, and principal wavelength at which the analyte absorbs. A range of hydrocarbons, from hexane to pentadecane, was analyzed at 2930 cm−1 using both fiber-coupled Fourier transform infrared spectroscopy and a modular prototype system. Diffusion coefficients were determined for these compounds and diffusion behavior examined and related to factors such as analyte polarity and molecular size. The diffusion coefficients were found to range from 6.41 × 10−11 ± 5 × 10−12 to 5.25 × 10−11 ± 9 × 10−13 cm2 s−1 for hexane and pentadecane into a 2.9 μm PDMS film, respectively. The diffusion model was also used to examine the effect of changing system parameters such as film thickness in order to characterize sensor response.

scholarly journals Диффузия и взаимодействие In и As, имплантированных в пленки SiO-=SUB=-2-=/SUB=-

2019 ◽  
Vol 53 (8) ◽  
pp. 1023
Author(s):  
И.Е. Тысченко ◽  
M. Voelskow ◽  
А.Н. Михайлов ◽  
Д.И. Тетельбаум
Keyword(s):  
Electron Microscopy ◽  
Diffusion Coefficient ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Subsequent Annealing ◽  
Energy Dispersive ◽  
X Ray ◽  
Enhanced Diffusion ◽  
Thermally Grown

AbstractBy means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO_2 films to concentrations of about 1.5 at % are studied in relation to the temperature of subsequent annealing in nitrogen vapors in the range of T = 800–1100°C. It is found that annealing at T = 800–900°C results in the segregation of As atoms at a depth corresponding to the As^+-ion range and in the formation of As nanoclusters that serve as sinks for In atoms. An increase in the annealing temperature to 1100°C yields the segregation of In atoms at the surface of SiO_2 with the simultaneous enhanced diffusion of As atoms. The corresponding diffusion coefficient is D _As = 3.2 × 10^–14 cm^2 s^–1.

Direct Measurement of Titanium Pipe Diffusion Coefficients in Sapphire

2007 ◽  
Vol 558-559 ◽  
pp. 939-942
Author(s):  
Tsubasa Nakagawa ◽  
Isao Sakaguchi ◽  
Naoya Shibata ◽  
K. Matsunaga ◽  
Teruyasu Mizoguchi ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Coefficients ◽  
Short Circuit ◽  
Mechanical Deformation ◽  
Lattice Diffusion ◽  
Pipe Diffusion ◽  
Diffusion Behavior ◽  
Titanium Pipe ◽  
Short Circuit Diffusion ◽  
Diffusion Profiles

The diffusion behavior of Ti3+ along basal dislocations in sapphire has been investigated by SIMS technique. High-density unidirectional dislocations were introduced by the high-temperature mechanical deformation, and Ti3+ ions were subsequently diffused along the dislocations. The SIMS diffusion profiles clearly showed diffusion tail due to the short circuit diffusion along the dislocations called pipe diffusion. Lattice diffusion coefficient and pipe diffusion coefficient of Ti3+ at 1300°C were measured to be 1.0±0.2×10-19 [m2/sec] and 2.0±0.6× 10-13 [m2/sec], respectively.

Investigation of Fickian diffusion in the ternary mixtures of water–ethanol–triethylene glycol and its binary pairs

2015 ◽  
Vol 17 (41) ◽  
pp. 27713-27725 ◽  
Author(s):  
J. C. Legros ◽  
Y. Gaponenko ◽  
A. Mialdun ◽  
T. Triller ◽  
A. Hammon ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Coefficients ◽  
Liquid Mixture ◽  
Triethylene Glycol ◽  
Ternary Mixtures ◽  
Fickian Diffusion ◽  
Composition Space

All diagonal and off-diagonal Fickian diffusion coefficients in the ternary liquid mixture water–ethanol–triethylenglycol and its binary subsystems have been measured. The figure shows the main diffusion coefficient D11 over the composition space.

Chromium Diffusion in Sapphire Crystals: Influence of Preannealing Conditions

1998 ◽  
Vol 527 ◽  
Author(s):  
E. G. Gontier-Moya ◽  
F. Moya ◽  
J. Bigarre ◽  
D. Juve ◽  
D. Treheux ◽  
...  
Keyword(s):  
Reference Material ◽  
Single Crystals ◽  
Point Defects ◽  
Diffusion Coefficients ◽  
Bulk Diffusion ◽  
Annealing Treatment ◽  
Chromium Diffusion ◽  
Linear Defects ◽  
Surface Polishing ◽  
Order Of Magnitude

ABSTRACTChromium diffusion coefficients in alumina single crystals were evaluated from penetration profiles determined by the SIMS technique. The samples were previously annealed at 1000°C (1 hour), 1500°C (4 hours), and 1700°C (24 hours). Diffusion experiments were carried out at 1400°C during 10 hours.The results show that bulk diffusion coefficients are strongly dependent on preannealing conditions (temperature and time): they decrease by more than an order of magnitude when the preannealing temperature is increased from 1000°C to 1700°C.These results are discussed taking into account the dislocations and point defects in alumina. We consider the role played by the linear defects resulting from surface polishing, as well as point defects associated with impurities. It is found that the lowest defect concentration is achieved after an annealing treatment at 1700°C during 24 hours. The conditions for obtaining a, «reference material» are proposed.

scholarly journals Diffusion of strontium implanted in glassy carbon

2021 ◽  
Vol 477 (2250) ◽  
pp. 20200797
Author(s):  
Johan B. Malherbe ◽  
Opeyemi S. Odutemowo ◽  
Chris C. Theron ◽  
Elke Wendler
Keyword(s):  
Glassy Carbon ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Linear Increase ◽  
Fickian Diffusion ◽  
Carbon Supports ◽  
Additional Information ◽  
Strontium Ions ◽  
Increasing Temperature

Glassy carbon has properties making it attractive as a containment material for radioactive waste. In this study, the diffusivity of the radiological important fission product, strontium, is measured. Two hundred kiloelectronvolt strontium ions were implanted at room temperature. The implanted samples were either annealed isochronally for 1 h up to 900°C or by increasing the temperature linearly up to 648°C. The Sr profiles were determined by Rutherford backscattering spectrometry (RBS). The isochronally annealed samples showed Fickian diffusion at 300°C ( D  = 6.7 × 10 −19  m 2  s −1 ) with segregation occurring at the higher temperatures. Raman spectroscopy indicated a link between damage annealing and the onset of segregation. During increasing temperature, the system is dynamic with diffusion taking place. An equation to determine diffusion coefficients for ramped heating was derived. Fickian diffusion occurred with an activation energy of 1.97 eV for 414–454°C, and from 458 to 558°C, it was 0.184 eV. At higher temperatures, a segregation of the strontium towards the surface was observed. A calculation of the heat of segregation of Sr in carbon supports this segregation. The results show that the in situ RBS measurements with a linear increase in temperature give additional information compared with the conventional isochronal annealing.

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