Preparation of Planview TEM Samples of Yba2Cu307−x Films Grown on BaF2(001)

1991 ◽  
Vol 254 ◽  
Author(s):  
Yang Li ◽  
Zhang Jinlong ◽  
Fan Chenggao ◽  
Zhang Yuheng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Magnetron Sputtering ◽  
Transmission Electron Microscope ◽  
Film Growth ◽  
Ybco Thin Film ◽  
Transmission Electron ◽  
Planar Magnetron ◽  
Fringe Patterns

AbstractA method for the preparation of planview transmission electron microscope (TEM) specimens of expitaxial Yba2Cu3O7−x (YBCO) thin films deposited on BaF2 by a dc modified planar magnetron sputtering technique is reported. The films are granular with their grains size ranging from a few hundred to a few thousand nanometers. The epitactic nature of the film growth is shown by analyses of moiré fringe patterns and by selected area diffraction methods. It is demonstrated that the YBCO thin film obtained is highly c-axis oriented, with misorientation corresponding to rotations of 9.2° and 90° about the c-axis. Additionally, the film's a or b axes form a 45° angle with that of the substrate.

FRACTURE TESTING OF NANOSCALE THIN FILMS INSIDE THE TRANSMISSION ELECTRON MICROSCOPE

2010 ◽  
Vol 02 (04) ◽  
pp. 745-758 ◽  
Author(s):  
SANDEEP KUMAR ◽  
M. A. HAQUE
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Grain Boundary Sliding ◽  
Dislocation Motion ◽  
Fracture Mechanisms ◽  
Free Standing ◽  
Transmission Electron ◽  
Average Grain Size

To visualize the fracture mechanisms in nanoscale thin films while measuring their fracture properties, we developed an experimental setup to carry out the experiments in-situ in the transmission electron microscope. The setup includes a 3 mm × 5 mm micro-electro-mechanical testing chip with actuators and sensors to measure fracture toughness of notched specimens. Fracture experiments were performed on about 125 nm thick free-standing aluminum thin film specimens with average grain size of about 50 nm. The specimens fractured at uniform far field stress of 470 MPa with stress intensity factor of 0.8–1.1 MPa m1/2. Commonly cited deformation mechanisms, such as dislocation-based plasticity and grain boundary sliding processes were not observed even at the notch tip, where the calculated stress considering the concentration factor exceeded 4 GPa. We propose that for grain sizes below 50 nm, dislocation motion confined at grain boundaries and grain rotation emerge to be significant processes in thin film deformation.

Crystal Structures on Growth of Pr0.7Ca0.3MnO3 Thin Films Analyzed by Transmission Electron Microscope

2007 ◽  
Vol 51 (12) ◽  
pp. 147 ◽  
Author(s):  
H. B. MOON ◽  
C. H. KIM ◽  
S. S. MIN ◽  
J. H. CHO ◽  
Y. K. KIM ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Crystal Structures ◽  
Transmission Electron Microscope ◽  
Transmission Electron

scholarly journals Donald William Pashley. 21 April 1927 — 16 May 2009

2010 ◽  
Vol 56 ◽  
pp. 317-340 ◽  
Author(s):  
Bruce A. Joyce ◽  
Michael J. Stowell
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Film Growth ◽  
Epitaxial Thin Films ◽  
Disorder Effects ◽  
Transmission Electron ◽  
Innovative Materials ◽  
Low Dimensional

Donald William (Don) Pashley was one of the most innovative materials scientists of his generation. He was distinguished for his electron diffraction and transmission electron microscope studies of epitaxial thin films, especially for in situ investigations, work that contributed enormously to our understanding of film growth processes. He pioneered the use of moiré patterns to reveal dislocations and other defects. He also made important contributions to long-range disorder effects on semiconductor surfaces and to the structure of low-dimensional semiconductor systems.

Microstresses in Molybdenum Nitride Thin Films Deposited by Reactive DC Magnetron Sputtering

2005 ◽  
Vol 490-491 ◽  
pp. 589-594 ◽  
Author(s):  
Yao Gen Shen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Growth ◽  
Nitrogen Addition ◽  
Molybdenum Nitride ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
Dense Microstructure ◽  
Transmission Electron ◽  
Complete Relaxation

Thin films of molybdenum nitride (MoNx with 0≤x≤0.35) were deposited on Si(100) at room temperature using reactive DC magnetron sputtering. The residual stress of films was measured as a function of sputtering pressure, nitrogen incorporation, and annealing temperature by wafer curvature-based technique. It was found that the stress of the films was strongly related to their microstructure, which depended mainly on the incorporation of nitrogen in the films. The film stresses without nitrogen addition strongly depended on the argon pressure and changed from highly compressive to highly tensile in a relatively narrow pressure range of 0.8-1.6 Pa. For pressures exceeding ~5.3 Pa, the stress in the film was nearly zero. Cross-sectional transmission electron microscopy indicated that the compressively stressed films contained a dense microstructure without any columns, while the films having tensile stress had a very columnar microstructure. High sputtering-gas pressure conditions yielded dendritic-like film growth, resulting in complete relaxation of the residual tensile stresses. It was also found that the asdeposited film was poorly ordered in structure. When the film was heated at ~775 K, crystallization occurred and the stress of the film drastically changed from –0.75 to 1.65 GPa. The stress development mechanism may be due to volumetric shrinkage of the film during crystallization.

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