β-relaxation related bright bands in thin film metallic glasses: Localized percolation of flow units captured via transmission electron microscope

2016 ◽  
Vol 109 (26) ◽  
pp. 261903 ◽  
Author(s):  
Z. Q. Chen ◽  
P. Huang ◽  
K. W. Xu ◽  
F. Wang ◽  
T. J. Lu
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Metallic Glasses ◽  
Flow Units ◽  
Transmission Electron ◽  
Β Relaxation

The Crystallization Research on the Zr-Based Bulk Metallic Glasses by Ion Thinning

2014 ◽  
Vol 887-888 ◽  
pp. 116-120
Author(s):  
Ying Liang Bai ◽  
Lian Long He
Keyword(s):  
Electron Microscope ◽  
Amorphous Alloy ◽  
Transmission Electron Microscope ◽  
Metallic Glasses ◽  
Bulk Amorphous Alloy ◽  
Edge Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Nickel Crystals

Transmission Electron Microscope (TEM) and X-Ray Diffraction (XRD) were used to investigate crystallization of the Zr70Cu8Ti7Ni15 bulk amorphous alloy, the results show that the edge region of BMGs sample produces nanosize Nickel crystals using the method of the ion thinning to make the TEM sample. The quantity of nanocrystals is proportional to the time of ion thinning and they are not residual crystals in the BMGs.

Conservation of superstructure at Ag/Si(l1l)--R30-Ag Interface observed by UHV-TEM

1999 ◽  
Vol 5 (S2) ◽  
pp. 148-149
Author(s):  
Y. Oshima ◽  
S. Sigeki ◽  
H. Hirayama ◽  
K. Takayanagi
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Surface Structure ◽  
Transmission Electron Microscope ◽  
Lattice Mismatch ◽  
Structural Information ◽  
Substrate Surface ◽  
Interfacial Structure ◽  
Clean Surface ◽  
Transmission Electron

A lot of efforts have been devoted to understanding an interfacial structure. But, there are some difficulties about it as follows: An interfacial structure depends on a surface structure of a substrate and its temperature. Also, an interfacial structure is not homogeneous in general because of a lattice mismatch between a substrate and an overlayer thin film.Ultrahigh vacuum transmission electron microscope (UHV-TEM) is very powerful to observe clean surface and the fabrication during deposition on the surface. Since structural information can be obtained from 10 nm-sized area to a few μm area using TEM, UHVTEM is very appropriate to investigate interfacial structure in detail.In this study, structure of Ag/Si(111)--R30-Ag interface was observed by UHVTEM. Especially, it is interesting whether the superstructure is conserved at this interface or not. The Si(l11)- as the substrate surface was obtained by Ag 1ML deposition on Si(l11) 7×7 surface at 673 K.

Sputter-Deposited Films as Standards for Tem X-Ray Analysis

1980 ◽  
Vol 38 ◽  
pp. 134-135
Author(s):  
A. F. Marshall ◽  
C. Zercher
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Specimen Thickness ◽  
Detector Efficiency ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Image Position ◽  
Deposited Films

Quantitative energy dispersive x-ray analysis in the transmission electron microscope is generally obtained in the form of relative concentrations using the equation: where CA, CB are the concentrations and IA, IB are the peak intensities of elements A and B, and kAB is a constant which is independent of specimen composition and specimen thickness, assuming the thin film criterion is satisfied. kAB may be determined experimentally from standards (Cliff-Lorimer technique1), or may be calculated from considerations of x-ray generation and detector efficiency for the elements being analyzed2. Due to differences in detector parameters, kAB may vary from instrument to instrument.

Observation of Ge2Sb2Te5 thin film phase transition behavior according to the number of cycles using Transmission Electron Microscope and Scanning Probe Microscope

2006 ◽  
Vol 961 ◽  
Author(s):  
Hyunjung Kim ◽  
Sikyung Choi ◽  
Sukhoon Kang ◽  
Kyuhwan Oh ◽  
Soonyong Kweon
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Electron Microscope ◽  
Phase Change ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Phase Transition Behavior ◽  
Transition Behavior ◽  
Transmission Electron

ABSTRACTRecently, the development of information technology (IT) increases the demands of memory devices. Phase change random access memory (PRAM), based on the reversible phase change of the chalcogenide alloy, Ge2Sb2Te5, is widely regarded as a favourite candidate for the next generation memory. Because of PRAM has a simple cell structure with high scalability; it is non-volatile, has a relatively high read/write operation speed (Â50ns). The PRAM operation relies on the fact that chalcogenide-based materials can be reversible switched from an amorphous phase to a crystalline state by an external electrical current. It is important to study the electrical property with set/reset cycles, since film thickness shrinkage occurs with the phase transition.In this work, we fabricated the 100nm amorphous Ge2Sb2Te5 thin film on TiN/Ti/Si substrate using dc-magnetron sputtering. The 50X50§2 isolated Ge2Sb2Te5 cell was lithographed by the lift-off pattern and wet etching. And TiN top electrode was deposited using pattern align process at room temperature after the SiO2 insulator CMP. Phase transition behavior with the set/reset cycle was observed using I-V measurement and transmission electron microscope (TEM) on isolated Ge2Sb2Te5 cell. The set/reset programming was operated using tungsten SPM tip which was fabricated using focused ion beam (FIB) lithography. I-V curve which was observed by the I-V probe clearly showed that the phase transition was occurred by applying the electric field through the I-V probe. The resistivity difference between amorphous and crystal state was more than 102. After the phase transition, it was also demonstrated with transmission electron microscope (TEM) analysis. For the preparation of TEM specimen of the amorphous and crystalline cell, focused ion beam (FIB) lithography was adopted.

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