Epitaxial Growth of FeSi2 on (111)Si

1983 ◽  
Vol 25 ◽  
Author(s):  
H.C. Cheng ◽  
L.J. Chen ◽  
T.R. Your
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Silicon Substrate ◽  
Isothermal Annealing ◽  
Ion Beam ◽  
Interfacial Reactions ◽  
Ion Beam Mixing

ABSTRACTIsothermal annealing, two step annealing and ion beam mixing were performed to induce interfacial reactions between iron thin films and silicon substrate. Both orthorhombic and tetragonal FeSi2 were found to grow epitaxially on (lll)Si with orthorhombic FeSi2 being the predominant phase. No epitaxial growth of FeSi2 on (001)Si was detected. Epitaxial islands as large as 40 μm in size were formed by a scheme combining ion beam mixing and two step annealing.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Dynamics of Microstructure in the Early Stages of Ion Beam Assisted Film Growth

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Film Growth ◽  
Ion Beam ◽  
Surface Interactions ◽  
Low Energy ◽  
Early Stages ◽  
Semiconductor Thin Films ◽  
Nucleation Mechanisms

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.

Ion beam mixing and interdiffusion in magnetite thin films

2016 ◽  
Author(s):  
M. Krupska ◽  
N-T. H. Kim Ngan ◽  
S. Sowa ◽  
Z. Tarnawski ◽  
L. Havela ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Mixing

Epitaxial growth of MgO thin films on silicon by dual ion beam sputtering

1993 ◽  
Vol 223 (1) ◽  
pp. 11-13 ◽  
Author(s):  
Yijie Li ◽  
Guangcheng Xiong ◽  
Guijun Lian ◽  
Jie Li ◽  
Zizhao Gan
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Ion beam mixing in Al/Fe multilayered thin films

Vacuum ◽  
1988 ◽  
Vol 38 (11) ◽  
pp. 987-990 ◽  
Author(s):  
B Rauschenbach ◽  
R Küchler ◽  
M Posselt ◽  
R Dietsch
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Multilayered Thin Films

Phase evolution and electrical properties of Co–Sb alloys fabricated from Co/Sb bilayers by thermal annealing and ion beam mixing

2015 ◽  
Vol 17 (37) ◽  
pp. 24427-24437 ◽  
Author(s):  
Manju Bala ◽  
Compesh pannu ◽  
Srashti Gupta ◽  
Tripurari S. Tripathi ◽  
Surya K. Tripathi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermoelectric Power ◽  
Thermal Annealing ◽  
Ion Beam ◽  
Phase Evolution ◽  
Ion Beam Mixing ◽  
Power Enhancement

Thermoelectric power enhancement of ion beam synthesized Co–Sb alloy thin films.

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