XPS Study of the Al/SiO2 Interface Viewed From the SiO2 Side

1983 ◽  
Vol 25 ◽  
Author(s):  
M.H. Hecht ◽  
F.J. Grunthaner ◽  
J. Maserjian
Keyword(s):  
Si Substrate ◽  
Electrical Measurements ◽  
Metal Insulator ◽  
New Approach ◽  
Aluminum Films ◽  
X Ray ◽  
Abrupt Interface ◽  
Xps Study ◽  
Destructive Measurement ◽  
Non Destructive

ABSTRACTWe report on the first non-destructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films. Both X-Ray Photoelectron Spictroscopy (XPS) and electrical measurements of unannealed, resistively evaporated Al films on thermal SiO2 indicate an atomically abrupt interface. Post metallization annealing (PMA) at 450°C induces reduction of the SiO2 by the aluminum, resulting in the layer ordering SiO2/Al2O3/Si/Al. The XPS measurement is performed from the SiO2 side after the removal of the Si substrate after etching with XeF2 gas and thinning of the SiO2 layer with HF:ETOH. This represents a powerful new approach to the study of metal-insulator and other interfaces.

Structural, Magnetic and Magneto-tranport Properties of Reactive-sputtered Fe3O4 Thin Films

2010 ◽  
Vol 1250 ◽  
Author(s):  
Xinghua Wang ◽  
Sarjoosing Goolaup ◽  
Peng Ren ◽  
Wen Siang Lew
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
Native Oxide ◽  
X Ray Diffraction ◽  
Verwey Transition ◽  
Electrical Measurements ◽  
Metal Insulator ◽  
X Ray ◽  
Sample Measurement

AbstractThin films of magnetite (Fe3O4) are grown on a single-crystal Si/SiO2 (100) substrate with native oxide using DC reactive sputtering technique at room tempreture (RT) and 300C. The x-ray diffraction(XRD) result shows the thermal energy during deposition enhances the crystallization of the Fe3O4 and x-ray photoelectron spectroscopy confirms the film deposited at 300C is single-phase Fe3O4 while the film deposited at RT is mostly ν-Fe2O3. The electrical measurements show that the resistivity of the Fe3O4 film increases exponentially with decreasing temperature, and exhibit a sharp metal-insulator transition at around 100 K, indicating the Verwey transition feature. The saturation magnetization Ms of Fe3O4 film measured by vibrating sample measurement (VSM) at RT was found to be 445 emu/cm3.

Cladding Thickness of Fuel Elements by X-Rays

1958 ◽  
Vol 2 ◽  
pp. 275-281
Author(s):  
Beverley James Lowe ◽  
Payson D. Sierer ◽  
Robert B. Ogilvie
Keyword(s):  
304 Stainless Steel ◽  
X Rays ◽  
X Ray ◽  
Uranium Fuel ◽  
Wide Range ◽  
Materials Used ◽  
Fuel Elements ◽  
Destructive Measurement ◽  
Non Destructive ◽  
Cladding Material

AbstractThe paper is based on a feasibility study to determine the suitability of various techniques for the non-destructive measurement of cladding thickness on uranium fuel elements. The techniques studied were: 1—the attentuation of the characteristic X-ray fluorescence from the uranium base metal by the cladding material, and 2—Compton scattering of X-rays from the cladding surface. The cladding materials used in the investigation were aluminum, 304 stainless steel and zirconium, providing a wide range of both atomic number and density.

Non-Destructive Analysis of Surface Stresses Using Grazing Incident X-Ray Diffraction

2005 ◽  
Vol 490-491 ◽  
pp. 143-148
Author(s):  
Chedly Braham ◽  
Andrzej Baczmanski ◽  
Wilfrid Seiler ◽  
N. Shiraki
Keyword(s):  
Sample Surface ◽  
Polycrystalline Materials ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
X Ray ◽  
Lattice Strains ◽  
Crystallographic Planes ◽  
Destructive Measurement ◽  
Non Destructive

The X-ray diffraction measurements based on the grazing incident geometry were applied to determine lattice strains in polycrystalline materials. This method enables a non-destructive measurement at chosen depth below the sample surface. The volume, for which the stress is measured, is well defined and it does not vary during experiment. The multireflection method was used for analysis of the experimental results since the interplanar spacings were measured for various orientation of the scattering vector as well as for various crystallographic planes {hkl}. Applying two different wavelengths of X- ray radiation and various incident angles non-destructive measurements of the residual stresses in function of penetration depth were performed. The variation of stresses in plastically deformed surface layers of steel samples was successfully determined and the values of the stresses were confirmed by standard diffraction measurement.

Amorphous W-Zr Films As Diffusion Barriers Between Al And Si

1985 ◽  
Vol 54 ◽  
Author(s):  
F. C. T. So ◽  
X.-A. Zhao ◽  
E. Kolawa ◽  
J. L. Tandon ◽  
M. F. Zhu ◽  
...  
Keyword(s):  
Diffusion Barriers ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Electrical Measurements ◽  
Line Layer ◽  
X Ray ◽  
High Crystallization ◽  
Deep Pits ◽  
Zr Alloy ◽  
Zr Alloys

ABSTRACTCosputtered W70Zr30 and W40Zr60 films are investigated as diffusion barriers between Al and Si. W-Zr alloys of both compositions were determined by x-ray diffraction to crystallize at 900°C on Al2O3 substrates. On <111>Si the W-Zr alloy reacts with the substrate above 700°C, forming a uniform, polycrystal line layer of W and Zr suicides. Despite the high crystallization temperatures, an Al overlayer interacts with W-Zr and the Si substrate at ∼500°C. MeV He backscattering spectrometry, SEM and EDAX indicate that this reaction is laterally nonuniform with the formation of deep pits penetrating into the Si substrate. We believe this to be a consequence of fractures in the W-Zr layer induced by reaction with Al. Electrical measurements on shallow junction diodes with <Si>/W-Zr/Al contacts show that the device junctions were thermally stable after a 30 min annealing at 450°C but were all shorted after heat treatments at 500°C or above.

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