Oxygen Effect and Redistribution in Cobalt Silicide Formation

1983 ◽  
Vol 25 ◽  
Author(s):  
Chuen-Der Lien ◽  
Marc-A. Nicolet
Keyword(s):  
Growth Rate ◽  
Dose Range ◽  
Oxygen Effect ◽  
Cobalt Silicide ◽  
Silicide Formation ◽  
Si Substrate ◽  
Silicide Growth ◽  
Two Phases ◽  
Effect Of Oxygen ◽  
Kinetics Of

ABSTRACT18O was implanted in the Si substrate or in the Co overlayer to study the effect of oxygen and its redistribution during Co silicides formation. Implanted and unimplanted samples were annealed in vacuum at 450°C for different durations. Over the investigated dose range of 0.5 to 2 × 101618O/cm2 in the Co film, the phases formed upon annealing are Co2Si and CoSi, as for the unimplanted samples. The kinetics of the silicide growth is changed little by the presence of oxygen in the Co film. Oxygen accumulates at the Co2Si/Co interface. When the oxygen is implanted in the Si substrate, the higher the oxygen dose is, the slower (fasteil the growth rate of CoSi(Co2Si) becomes. Below 1 × 1016 O/cm, both phases (i.e. CoSi and Co2Si) still form; above 2 × 1016 O/cm2 , only Co2Si formsWhen two phases form, the oxygen moves deep into the Si substrate; when only Co2Si forms, the oxygen moves toward the surface.

Kinetics of NiSi Formation by Solid State Diffusion in Pt/NiCr/Si Via Growth of an Amorphous Cr-Rich Barrier Layer

1990 ◽  
Vol 205 ◽  
Author(s):  
B.K. Patnaik ◽  
Ju Hyeon Lee ◽  
D. Adams ◽  
G.A. Rozgonyi ◽  
N.R. Parikh ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Stage ◽  
Amorphous Layer ◽  
Solid State Diffusion ◽  
Low Temperature Annealing ◽  
Prolonged Annealing ◽  
Transmission Electron ◽  
State Diffusion ◽  
Silicide Growth ◽  
Kinetics Of

AbstractWe have used Rutherford backscattering spectroscopy (RBS) to study the kinetics of NiSi growth during low temperature annealing of a Ni(Cr) layer on Si. During the silicide growth, a Cr-rich amorphous layer was formed between the silicide and the Ni(Cr) layers. This amorphous layer produces a slow and uniform silicide growth rate; the NiSi thickness was 60 nm after a 2h anneal at 475°C. After prolonged annealing, the amorphous layer recrystallized, causing very rapid silicide growth. When a thin (0.5 nm) layer of Pt was deposited between the Si and Ni(Cr) layers, the amorphous layer was thinner, the silicide growth rate was correspondingly greater and the rapid growth stage occurred earlier. The RBS data agreed qualitatively with transmission electron microscopy results for the growth of both the amorphous layer and the silicide.

On the influence of the surface pretreatment of a Si substrate on cobalt silicide formation

1990 ◽  
Vol 5 (7) ◽  
pp. 745-751 ◽  
Author(s):  
A L De Laere ◽  
R L Van Meirhaeghe ◽  
W H Laflere ◽  
F Cardon
Keyword(s):  
Cobalt Silicide ◽  
Silicide Formation ◽  
Si Substrate ◽  
Surface Pretreatment

Growth and characterization of ultrathin cobalt silicide films on Si(211) and (311)

1990 ◽  
Vol 5 (5) ◽  
pp. 1032-1041 ◽  
Author(s):  
Julia M. Phillips ◽  
J.L. Batstone ◽  
J.C. Hensel ◽  
Irene Yu ◽  
M. Cerullo
Keyword(s):  
High Symmetry ◽  
Cobalt Silicide ◽  
Intermediate Annealing ◽  
Si Substrate ◽  
Intermediate Phases ◽  
Transmission Electron ◽  
Structural And Electrical Properties ◽  
Order Of Magnitude ◽  
Silicide Growth

We have studied the structural and electrical properties of ultrathin cobalt silicide films deposited on Si(211) and (311) and annealed at a variety of temperatures. Transmission electron microscopy reveals two regimes of silicide growth. If more than 10 Å of Co is deposited, textured CoSi forms at low temperatures, which transforms to two epitaxial orientations of CoSi2 at about 500°C. If less than 10 Å of Co is deposited, only one epitaxial CoSi2 orientation is observed, which occurs in discontinuous islands or lines. The resistivities of the thinnest films reflect the degree of continuity of the silicide layers. In thicker films, where disorder is the major factor, the resistivity for intermediate annealing temperatures (∼500°C) depends dramatically on the orientation of the Si substrate, being an order of magnitude lower for Si(311) and (211) than for (111). The differences between these observations and those made on films grown under the same conditions on Si(111) can be understood by noting both the greater tendency of the film to form intermediate phases which are epitaxial on the high symmetry Si(111) surface and the faceting of the CoSi2-Si(311) and (211) interfaces.

Diffusional Phase Transformation under Induced Thermal Stress

1991 ◽  
Vol 230 ◽  
Author(s):  
E C Zingu ◽  
B T Mofokeng
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Elevated Temperatures ◽  
Film Structure ◽  
Intrinsic Stress ◽  
Silicide Formation ◽  
Si Substrates ◽  
Silicide Growth ◽  
Expansion Coefficients ◽  
Large Tensile Stress

AbstractWhen thin films are deposited on substrates or when compound films are formed through interdiffusion of multi-film structures, intrinsic stress develops in the various films. Thermal mismatch between the expansion coefficients of the substrate and films in multi-film structures gives rise to extrinsic stress at elevated temperaturesBy using Si<100> and rolled Al foil substrates supporting the same multi-film structure SiO2/Si/Co, the effect of extrinsic stress on interdiffusion of thin films is isolated.Silicide growth is found to be inhibited (delayed) when formed on Al substrates compared to that formed on Si substrates. The delay in silicide growth is ascribed to delamination caused by large tensile stress prior to silicide formation. The growth rate of Co2Si is found to be similar on both Al and Si substrates

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Crystal-growth kinetics of protein single crystals along capillary tubes in the gel-acupuncture technique

1999 ◽  
Vol 55 (2) ◽  
pp. 577-580 ◽  
Author(s):  
Abel Moreno ◽  
Manuel Soriano-García
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Capillary Tube ◽  
Crystal Growth Rate ◽  
Equilibrium Studies ◽  
Acta Cryst ◽  
Average Growth ◽  
X Ray Crystallography ◽  
Growing Cell ◽  
Kinetics Of

In attempts to obtain protein crystals of a sufficient size for structural studies, lack of knowledge of the physicochemical properties of protein solutions and of their crystal-growth behaviour lead to a bottleneck for drug design as well as for X-ray crystallography. Most formal investigations on crystal-growth phenomena have been focused on equilibrium studies, where the protein is soluble, and on the kinetics of crystal growth, which is related to both nucleation and crystal-growth phenomena. The aim of this work is to measure the crystal-growth rate along a capillary tube used as a growing cell. These experiments were carried out using the gel-acupuncture technique [García-Ruiz et al. (1993). Mater. Res. Bull. 28, 541–546; García-Ruiz & Moreno (1994). Acta Cryst. D50, 484–490; García-Ruiz & Moreno (1997). J. Cryst. Growth, 178, 393–401]. Crystal-growth investigations took place using lysozyme and thaumatin I as standard proteins. The maximum average growth rate obtained in the lower part of the capillary tube was about 35 Å s−1 and the minimum average growing rate in the upper part of the capillary tube was about 8 Å s−1. The crystal-growth rate as a function of the supersaturation was experimentally estimated at a constant height along the capillary tube.

Correlations for Interaction Layer Growth in U-Mo/Al Dispersion Fuels

2017 ◽  
Vol 375 ◽  
pp. 29-39
Author(s):  
Boris A. Tarasov ◽  
Stepan N. Nikitin ◽  
Dmitry P. Shornikov ◽  
Maria S. Tarasova ◽  
Igor I. Konovalov
Keyword(s):  
Growth Rate ◽  
Growth Process ◽  
Aluminum Matrix ◽  
Layer Growth ◽  
Radiation Diffusion ◽  
Fission Rate ◽  
Interaction Layer ◽  
The Matrix ◽  
Mechanism And Kinetics ◽  
Kinetics Of

Paper presents the results of the growth rate of the interaction layer of uranium-molybdenum dispersed fuel in aluminum matrix and influence of silicon alloying on it. The growth process of amorphous interaction layer depends on the radiation diffusion which is proportional to the fission rate in the power of 1⁄4. The alloying of the matrix by silicon does not lead to a change in the mechanism and kinetics of the interaction layer growth, but only slows it down.

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

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