Investigation of Structure Development in Mod Pb(ZrxTi1-x)O3 Films by an Optical Method

1991 ◽  
Vol 243 ◽  
Author(s):  
Chien H. Peng ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Optical Method ◽  
Transformation Kinetics ◽  
X Ray Diffraction ◽  
Structure Development ◽  
X Ray ◽  
Pzt Films ◽  
Metalorganic Decomposition ◽  
Ray Methods

AbstractFor i roving the metalorganic decomposition (MOD) process, such that perovskite Pb(ZrxTi1-x)O3 thin films can be fabricated at low temperatures, understanding of structure development is required. Here we report a nondestructive optical method for investigating the structure development in MOD PZT films. Using this method we have identified the temperatures at which the formation of both pyrochlore and perovskite was completed as a function of Zr/Ti ratio. Also for PZT solid solutions, we have identified the temperatures at which the initial presence of both pyrochlore and perovskite was observed. These temperatures compare very well with those obtained from the X-ray diffraction studies. In contrast to X-ray methods, the proposed technique can also be effectively utilized for studying the pyrochlore formation from the amorphous phase. Furthermore, it was also shown that the optical method can be used for characterizing the phase transformation kinetics in PZT films.

EFFECT OF GRAIN SIZE ON THE FERROELECTRIC PROPERTIES OF Bi3.25La0.75Ti3O12 Thin Films

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4469-4474 ◽  
Author(s):  
KYOUNG-TAE KIM ◽  
CHANG-IL KIM ◽  
DONG-HEE KANG ◽  
IL-WUN SHIM
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Fatigue Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities ◽  
Metalorganic Decomposition ◽  
Small Grains

The Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared by metalorganic decomposition method. The effect of grain size on the ferroelectric properties during crystallization were investigated by x-ray diffraction and field emission scanning electron microscope. The grain size and the roughness of BLT films increase with increasing of drying temperature. The leakage current densities of the BLT thin film with large grains are higher than that with small grains. The remanent polarization of BLT increase with increasing grain size. As compared BLT with small grain size, the BLT film with larger grain size shows better fatigue properties. This may be explained that small grained films shows more degradation of switching charge than large grained films.

Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

2012 ◽  
Vol 204-208 ◽  
pp. 4207-4210 ◽  
Author(s):  
Yu Fei You ◽  
C. H. Xu ◽  
Jun Peng Wang ◽  
Yu Liang Liu ◽  
Jin Feng Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Pzt Ceramics ◽  
X Ray ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Pzt Ferroelectric Thin Films ◽  
Electronic Microscope

Sol-gel method is used for the formation of Pb(Zr0.63Ti0.37)O3(PZT) thin films. The initial films were formed with spin coating sol solution on silicon wafer and drying coated wet sol film at 300°C for 5min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. 4 initial films were annealed at 500°C for 2h to obtain PZT ceramics films. The morphologies of the surface and cross-section of PZT films were observed with a scanning electronic microscope (SEM). The phase structures of PZT films were analyzed using an X-ray diffraction meter (XRD). Experimental results show that PZT film prepared by coating wet sol on silicon once can be high smooth and compact film.

Powder X-Ray Diffraction Characterization of Laser Deposited Ferroelectric Thin Films

1991 ◽  
Vol 35 (A) ◽  
pp. 211-220
Author(s):  
W. Wong-Ng ◽  
T.C. Huang ◽  
L.P. Cook ◽  
P.K. Schenck ◽  
M.D. Vaudin ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Analytical Techniques ◽  
Surface Strain ◽  
Tetragonal Symmetry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Splitting ◽  
Pzt Films ◽  
Diffraction Patterns

AbstractThin films of BaTiO3 and Pb(Zr53 Ti47)O3 (PZT) have been deposited on Pt and Pt-coated silicon substrates using both Nd-YAG and excimer lasers. The BaTiO3 films were prepared using heated substrates and were crystalline. The PZT films were deposited at room temperature and were amorphous; on annealing, they crystallized and gave rise to well-defined powder x-ray diffraction patterns.To compare and correlate the properties and processing conditions of these thin films, characterizations were performed using a variety of analytical techniques including x-ray diffraction, TEM, SEM/EDX and ferroelectric and dielectric property measurements. The x-ray diffraction technique was used for identifying the various phases formed and also for analyzing the profiles of the diffraction peaks. Both the PZT films annealed below 800°C and the BaTiO3 films typically show polycrystalline x-ray diffraction patterns corresponding to a pseudo-cubic structure (i.e no peak splitting) instead of the tetragonal patterns characteristic of the target materials. It was found that for the BaTiO3 films the pseudosymmetry was due to crystallographic alignment of the longer c-axis In the substrate surface to relieve strain. In the FZT films annealed below 900°C, it is suggested that the residual surface strain and/or small crystallite size of these materials may have precluded the peak splitting; at higher annealing temperatures, the tetragonal symmetry was recovered.

Growth and Characterization of PbTiO3 and Pb(Zr,Ti)O3 Thin Films by MOCVD

1994 ◽  
Vol 361 ◽  
Author(s):  
Y. Gao ◽  
W. Dong ◽  
B.A. Turtle
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Pzt Films ◽  
Uniform Composition

ABSTRACTFerroelectric PbTiO3 and Pb(Zr,Ti)O3 thin films with a perovskite structure were grown on MgO and Pt/Ti/SiO2/Si by MOCV.D. The microstructure and composition of the films were characterized by x-ray diffraction, SEM, and AES. Preferred orientation of either (111) or (100)/(001) was obtained on the Pt/Ti/SiO2/Si substrates at temperatures from 600 °C to 650 °C The preferred (111) orientation was attributed to the formation of the Pt3Ti phase in the Pt layer of the substrates, whereas the (100)/(001) orientations were inferred as the growth rate effect. AES depth profiling indicated a uniform composition through the thickness of the PZT films. However, SEM showed different topography and microstructure of the PZT films deposited in different oxygen partial pressure. Electrical properties of the PZT films appear varied as a function of the oxygen partial pressure in the reactor.

Spectroscopic Study of Titanium Oxide Thin Films at Low Temperatures by X-ray Diffraction, Raman Scattering, Fourier Transform Infrared Spectroscopy and Photoluminescence

2006 ◽  
Vol 928 ◽  
Author(s):  
Zhiwei Zhao ◽  
Beng Kang Tay
Keyword(s):  
Thin Films ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Spectroscopic Study ◽  
Titanium Oxide ◽  
Low Temperatures ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray

ABSTRACTTitanium oxide thin films were prepared by filtered cathodic vacuum arc (FCVA) at low temperatures ranged from room temperature to 330°C. Spectroscopic study of the deposited films were carried out by X-ray diffraction, Raman Scattering, Fourier transform infrared spectroscopy (FTIR) and photoluminescence (PL), respectively. The films remained amorphous up to the substrate temperature of 230°C. Nanocrystalline titanium oxide thin films occurred at 330°C with the strongest peak intensity from anatase (101) plane. The average grain size was around 20 nm and no rutile phase could be found. Various allowed vibrational frequencies (e.g. 152, 199, 399, 640 cm−1) in Raman spectra and Ti-O-Ti transverse mode at 436 cm−1 in the FTIR spectrum evidently verified the presence of anatase phase in the films at 330°C. Moreover, at room temperature only crystalline film exhibited a PL peak with the center at 379 nm in PL spectrum and the origin was discussed.

In situ examination of oxygen non-stoichiometry in La0.80Sr0.20CoO3−δ thin films at intermediate and low temperatures by x-ray diffraction

2014 ◽  
Vol 104 (16) ◽  
pp. 161910 ◽  
Author(s):  
M. D. Biegalski ◽  
E. Crumlin ◽  
A. Belianinov ◽  
E. Mutoro ◽  
Y. Shao-Horn ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
X Ray Diffraction ◽  
X Ray ◽  
In Situ Examination

Structural analysis of coexisting tetragonal and rhombohedral phases in polycrystalline Pb(Zr0.35Ti0.65)O3 thin films

2003 ◽  
Vol 18 (1) ◽  
pp. 173-179 ◽  
Author(s):  
Maxim B. Kelman ◽  
Paul C. McIntyre ◽  
Bryan C. Hendrix ◽  
Steven M. Bilodeau ◽  
Jeffrey F. Roeder ◽  
...  
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Surface Region ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Scattering Geometry ◽  
Pzt Films

Structural properties of polycrystalline Pb(Zr0.35Ti0.65)O3 (PZT) thin films grown by metalorganic chemical vapor deposition on Ir bottom electrodes were investigated. Symmetric x-ray diffraction measurements showed that as-deposited 1500 íthick PZT films are partially tetragonal and partially rhombohedral. Cross-section scanning electron microscopy showed that these films have a polycrystalline columnar microstructure with grains extending through the thickness of the film. X-ray depth profiling using the grazing-incidence asymmetric Bragg scattering geometry suggests that each grain has a bilayer structure consisting of a near-surface region in the etragonal phase and the region at the bottom electrode interface in the rhombohedral hase. The required compatibility between the tetragonal and rhombohedral phases in he proposed layered structure of the 1500 Å PZT can explain the peak shifts observed n the symmetric x-ray diffraction results of thicker PZT films.

Preparation and Properties of Barium Incorporated Strontium Bismuth Tantalate Ferroelectric Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Chung-Hsin Lu ◽  
Cheng-Yen Wen
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Barium Ions ◽  
X Ray ◽  
Diffraction Peaks ◽  
Metalorganic Decomposition ◽  
Strontium Ions

AbstractSrBi2Ta2O9thin films doped with barium ions were studied, in which Ba/(Sr+Ba) = 0.3 and 0.5, meanwhile the content of (Sr+Ba) remains unity to keep the stoichiometry of SrBi2Ta2O9. Films were deposited using metalorganic decomposition method with spin-on coating. Crystallinity, surface morphology, and ferroelectric properties of prepared thin films were investigated. From X-ray diffraction (XRD) analysis, barium ions substituted strontium ions in the SrBi2Ta2O9 lattice. Shift of diffraction peaks was observed, indicating a slight distortion of the lattice while barium ions incorporated into. The observation of prepared films indicated that the grain size of films annealed at 750 °C was about 0.7∼0.8 μm. Such barium incorporated SrBi2Ta2O9 thin films exhibited higher remanent polarization than the intrinsic SrBi2Ta2O9thin films.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

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