Organometallic chemical vapor deposition of superconducting, highTcPb‐doped Bi‐Sr‐Ca‐Cu‐O thin films

1989 ◽  
Vol 55 (18) ◽  
pp. 1906-1908 ◽  
Author(s):  
J. M. Zhang ◽  
H. O. Marcy ◽  
L. M. Tonge ◽  
B. W. Wessels ◽  
T. J. Marks ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organometallic Chemical Vapor Deposition

High‐Tc Undoped and Pb‐Doped BI‐SR‐CA‐CU‐O thin Films Prepared by Organometallic Chemical Vapor Deposition

1989 ◽  
Vol 169 ◽  
Author(s):  
J. M. Zhang ◽  
H. O Marcy ◽  
L .M. Tonge ◽  
B. W. Wessels ◽  
T. J. Marks ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Tc ◽  
Metal Organic ◽  
Organic Precursors ◽  
Organometallic Chemical Vapor Deposition

AbstractFilms of the high‐Tc undoped and Pb‐doped Bi‐Sr‐Ca‐Cu‐O (BSCCO) superconductors have been prepared by low pressure organometallic chemical vapor deposition (OMCVD) using the volatile metal‐organic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, and triphenyl bismuth. Factors which influence texture and morphology of the OMCVD‐derived films have been investigated, including the effects of annealing, doping, and substrates.

Organometallic Chemical Vapor Deposition of Strontium Titanate thin Films

1989 ◽  
Vol 168 ◽  
Author(s):  
W. A. Feil ◽  
B. W. Wessels ◽  
L. M. Tonge ◽  
T. J. Marks
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Dielectric Constants ◽  
Silicon Substrates ◽  
Metal Organic ◽  
Organic Precursors ◽  
Organometallic Chemical Vapor Deposition

AbstractSrTiO3 thin films were deposited by low pressure organometallic chemical vapor deposition on silicon substrates using the volatile metal-organic precursors titanium isopropoxide and Sr(dipivaloylmethanate)2. Oxygen and water vapor were used as reactant gases and argon was used as a carrier gas. Growth rates ranging from 0.6–2.1 μm/hr were obtained at 650–800°C. Polycrystalline films were obtained at growth temperatures of 650–750°C, and amorphous films above 750°C. SrTiO3 films deposited on silicon substrates exhibited resistivities greater than 109 Ω-cm and dielectric constants up to 100.

Sign in / Sign up

Export Citation Format

Share Document