Characteristics of Silicon Nanocrystals Embedded in the Amorphous-Silicon Carbide Films Deposited by Cat-CVD at Low Temperature for Optoelectronics Applications

2019 ◽  
Vol 25 (10) ◽  
pp. 105-109 ◽  
Author(s):  
Jae-Dam Hwang ◽  
Kyoung-Min Lee ◽  
Youn-Jin Lee ◽  
Seunghun Jang ◽  
Moonsup Han ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Silicon Nanocrystals ◽  
Amorphous Silicon Carbide

Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

2012 ◽  
Vol 522 ◽  
pp. 136-144 ◽  
Author(s):  
Jérémy Barbé ◽  
Ling Xie ◽  
Klaus Leifer ◽  
Pascal Faucherand ◽  
Christine Morin ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Silicon Nanocrystals ◽  
Film Properties ◽  
Amorphous Silicon Carbide ◽  
Carbide Alloy

Evaluation of Silicon Carbide Formed with a Single Precursor of Di-Tert-Butylsilane

1992 ◽  
Vol 242 ◽  
Author(s):  
Sing-Pin Tay ◽  
J. P. Ellul ◽  
Susan B. Hewitt ◽  
N. G. Tarr ◽  
A. R. Boothroyd
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Amorphous Silicon Carbide ◽  
Single Precursor ◽  
C Doping ◽  
Low Temperature Process

ABSTRACTA low temperature process of silicon carbide deposition using the pyrolysis of di-tert-butylsilane has been explored for formation of emitter structures in silicon heterojunction bipolar transistors. Near stoichiometric amorphous silicon carbide films were achieved at 775°C. Doping and annealing of these films resulted in resistivity as low as 0.02 ohm-cm.

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