Growth Dependence of Thickness, Morphology and Electrical Transport of InN Over Layers on Ain-Nucleated (00.1) Sapphire

1992 ◽  
Vol 242 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden
Keyword(s):  
Hall Mobility ◽  
Electrical Transport ◽  
High Resistivity ◽  
Reactive Magnetron ◽  
Interesting Aspect ◽  
Heteroepitaxial Growth ◽  
Growth Morphology ◽  
Electrical Transport Properties ◽  
Experimental Conditions ◽  
High Hall Mobility

ABSTRACTThe seeded-heteroepitaxial growth, morphology and electrical transport properties of InN overlayers deposited by reactive magnetron sputtering on AIN-nucleated (00.1) sapphire have been investigated. For comparison, InN films were grown directly onto (00.1) sapphire under identical experimental conditions. These unseeded films showed a unimodal growth and were a mixture of textured and broadly heteroepitaxial grains. Low Hall mobility and carrier concentration and high resistivity were typical. In contrast, the AIN-nucleated InN overlayers exhibited a bimodal growth, strongly heteroepitaxial grains, and high Hall mobility. A particularly interesting aspect of the films grown on seeded (00.1) sapphire is the preservation of electrical continuity and high Hall mobility even in the limit of InN overlayers with thicknesses only on the order of 20–40Å.

Observation of the Wurtzite Phase in OMVPE Grown ZnSe/GaAs: Effect on Implantation and Rapid Thermal Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
K. S. Jones ◽  
J. Yu ◽  
P. D. Lowen ◽  
D. Kisker
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Transport ◽  
High Resistivity ◽  
Ion Milling ◽  
Electrical Transport Properties ◽  
Wurtzite Phase ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractTransmission electron diffraction patterns of cross-sectional TEM samples of OMVPE ZnSe on GaAs indicate the existence of the hexagonal wurtzite phase in the epitaxial layers. The orientation relationship is (0002)//(111); (1120)//(220). Etching studies indicate the phase is internal not ion milling induced. The average wurtzite particle size is 80Å-120Å. Because of interplanar spacing matches it is easily overlooked. Electrical property measurements show a high resistivity (1010ω/square) which drops by four orders of magnitude upon rapid thermal annealing between 700°C and 900 °C for 3 sec. Implantation of Li and N have little effect on the electrical transport properties. The Li is shown to have a high diffusivity, a solid solubility of ≈1016/cm3 at 800°C and getters to the ZnSeA/aAs interface.

Influence of Molar Ratio of Citric Acid to Metal Ions on Structure, Microstructure and Electrical Transport Properties on Nanosized La0.85Na0.15MnO3

2015 ◽  
Vol 1107 ◽  
pp. 261-266
Author(s):  
Kean Pah Lim ◽  
Kuen Hou Cheong ◽  
Abdul Halim Shaari ◽  
Mansor Hashim ◽  
Albert Han Ming Gan ◽  
...  
Keyword(s):  
Citric Acid ◽  
Metal Ions ◽  
Grain Boundaries ◽  
Transport Properties ◽  
Electrical Transport ◽  
Perovskite Phase ◽  
Hexagonal Structure ◽  
Molar Ratio ◽  
High Resistivity ◽  
Electrical Transport Properties

In this paper, nanosized La0.85Na0.15MnO3 (LNMO) has been synthesized via sol-gel method by involving two major steps, first the complexation of citric acid (CA) with metal ions (MI) and second the polyesterification between CA and ethylene glycol (EG). The effect of molar ratio CA:MI varying from 2-4 on structure, microstructure and electrical transport properties of LNMO have been investigated by constant the amount of EG. All samples show single perovskite phase with hexagonal structure and space group R3c after sintering at 800°C for 10h. Sample of molar ratio 2.5 is observed to possess smallest grain sizes which yield high resistivity value compared with others, is suggested to originate from the increase of tunneling barriers (grain boundaries). The large low field magnetoresistance (LFMR) of about ~ -16% at 0.1T and low temperature confirmed the important role of grain boundaries in the nanosized LNMO.

Seeded Heteroepitaxy and the Overgrowth of InN Films: Nucleation with Lattice Mismatched AIN

1992 ◽  
Vol 280 ◽  
Author(s):  
Thomas J. Kistenmacher ◽  
Scott A. Ecelberger ◽  
Wayne A. Bryden
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Yttria Stabilized Zirconia ◽  
High Symmetry ◽  
Reactive Magnetron ◽  
Stabilized Zirconia ◽  
Electrical Transport Properties ◽  
Fused Quartz

ABSTRACTThe growth and properties of thin films of InN on a variety of substrates nucleated by a 400Å layer of AIN have been shown to be dependent on the lattice mismatch (LMM) with the substrate. Examples are drawn from growth of InN thin films by reactive magnetron sputtering on high symmetry faces of a variety of crystalline substrates [(00.1) sapphire, (111) silicon and (111) yttria-stabilized zirconia, and (001) mica] and amorphous fused quartz. Striking is a comparison of the electrical transport properties for nucleated and unnucleated InN films. For example, the ratio of the Hall mobilities for nucleated and unnucleated InN films deposited on (00.1) sapphire (LMM for AIN and InN of 13.0% and 29.0%, respectively) is ∼102, while this ratio for nucleated and unnucleated InN films on (111) zirconia (LMM for AIN and InN of −14.8% and −7.8%, respectively) is ∼10−2. While all the factors underlying these results are not necessarily obvious, it is rather apparent that this trend in Hall mobility stems from a contrasting trend in film resistivity at a more nearly constant value for the carrier concentration.

Electrical transport properties of TiCoSb half-Heusler phases that exhibit high resistivity

2000 ◽  
Vol 13 (1) ◽  
pp. 77-89 ◽  
Author(s):  
Y Xia ◽  
V Ponnambalam ◽  
S Bhattacharya ◽  
A L Pope ◽  
S J Poon ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
High Resistivity ◽  
Electrical Transport Properties

Magnetically Soft Co-C Granular-like Amorphous Thin Films With High Resistivity and High Saturation Flux Density

2002 ◽  
Vol 721 ◽  
Author(s):  
H. Wang ◽  
S.P. Wong ◽  
M.F. Chiah ◽  
W.Q. Li ◽  
C.Y. Poon ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Electrical Transport ◽  
Quantum Interference ◽  
Rutherford Backscattering Spectrometry ◽  
Magnetic Hysteresis ◽  
High Resistivity ◽  
Vacuum Furnace ◽  
Electrical Transport Properties ◽  
X Ray

AbstractGranular-like amorphous CoxC1-x nanocomposite thin films, with x in the range of 60-75% in atomic percentage, have been prepared by pulsed filtered vacuum arc deposition. The structures of the films were characterized by non-Rutherford backscattering spectrometry, transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and Raman spectroscopy. The in-plane magnetic hysteresis loops were measured by a superconducting quantum interference device magnetometer at room temperature. The electrical transport properties were measured by the four-probe technique at various temperatures ranging from 20 to 300 K. The films were found to be magnetically soft with coercivities in the range of 2 to 12 Oe, resistivities in the range of 130 to 300 μΩcm, and magnetic saturation flux densities in the range of 6 to 13 kG. The films also showed good thermal stability in their structural, electrical and magnetic properties upon annealing up to 200°C in a vacuum furnace.

Growth Morphology of InN Thin Films by Scanning Tunneling and Atomic Force Microscopies and X-Ray Scattering

1993 ◽  
Vol 312 ◽  
Author(s):  
Wayne A. Bryden ◽  
Marilyn E. Hawley ◽  
Scott A. Ecelberger ◽  
Thomas J. Kistenmacher
Keyword(s):  
Thin Films ◽  
Hall Mobility ◽  
Electrical Transport ◽  
Scanning Tunneling ◽  
Growth Morphology ◽  
Nucleation Layer ◽  
X Ray ◽  
X Ray Scattering ◽  
Atomic Force ◽  
Ray Scattering

AbsiractThe evolution of the growth morphology of thin films of InN on (00.1) sapphire and on (00.1) sapphire prenudeated by a layer of AIN have been followed as a function of the thickness of the InN overlayer. The InN thin films and the AIN nucleation layers were deposited by reactive magnetron sputtering and first characterized by X-ray scattering, profilometry, and electrical transport. These AIN-nucleated InN films displayed heteroepitaxial grains, and high Hall mobility -even in the limit of InN overlayer on the order of 20-40Å. In parallel, InN films of varying thickness were grown directly onto (00.1) sapphire. These films showed a mixture of textured and heteroepitaxial grains, and lower Hall mobility. Atomic force and scanning tunneling microscopy studies have focussed on the morphology of the InN films with thicknesses: (a) much smaller than the AIN nucleation layer; and, (b) near the morphological transition that occurs at ∼1μm and has been attributed to the crossover from a 2D to a 3D growth mechanism. Additional correlations of X-ray structural coherence with growth mode are also examined.

ECR-Assisted Reactive Magnetron Sputtering of InN

1994 ◽  
Vol 339 ◽  
Author(s):  
W. A. Bryden ◽  
S. A. Ecelberger ◽  
M. E. Hawley ◽  
T. J. Kistenmacher
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electrical Transport ◽  
Electron Cyclotron Resonance ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Heteroepitaxial Growth ◽  
Structural Morphology ◽  
Apparent Reduction ◽  
Homogeneous Strain

ABSTRACTThe growth of high-quality thin films of the Group IIIA nitrides is exceedingly difficult given their propensity for nonstoichiometry and the lack of suitable substrates for either homoepitaxial or heteroepitaxial growth. A novel deposition technique, ultrahigh vacuum electron cyclotron resonance-assisted reactive magnetron sputtering, has been developed for the preparation of Group IIIA nitride thin films. Thus far, thin films of the semiconductor InN have been deposited on AlN-seeded (00.1) sapphire substrates, and the properties (structural, morphology, and electrical transport) of these films studied as a function of growth temperature. Comparison to InN thin films grown by conventional reactive magnetron sputtering shows enhanced Hall mobilities (from about 50 to over 100 cm2/V-sec), a decreased carrier concentration (by about a factor of 2–3), an increased optical bandgap, and an apparent reduction in homogeneous strain that is in part to be due to film relaxation induced by the ECR beam and in part to enhanced nitrogen content and more nearly stoichiometric films.

ELECTRICAL TRANSPORT PROPERTIES OF Nb-DOPED SrTiO3 FABRICATED ON MgO(100) AND SrTiO3(100) SUBSTRATES BY REACTIVE EVAPORATION METHOD

1993 ◽  
Vol 07 (08) ◽  
pp. 543-553
Author(s):  
M. NAGATA ◽  
Y. MIZUNO ◽  
H. NOJIMA ◽  
K. SUGAWARA ◽  
M. KOBA
Keyword(s):  
Hall Mobility ◽  
Electrical Transport ◽  
X Ray Diffraction ◽  
Electrical Transport Properties ◽  
Temperature Relation ◽  
Metallic Behavior ◽  
Evaporation Method ◽  
Reactive Evaporation ◽  
Increasing Temperature ◽  
Substrate Temperatures

Undoped and Nb-doped SrTiO 3 films have been fabricated on SrTiO 3(100) and MgO(100) substrates at temperatures between 500°C and 800°C by a reactive evaporation method. The single-crystallinity of these films was confirmed by X-ray diffraction and RHEED studies. Better crystallinity was obtained for films fabricated at substrate temperatures of 700°C and 800°C. Metallic behavior was found in the resistivity vs. temperature relation for all the films with Nd concentration between ~ 0.5 wt.% and ~ 5wt.%. Hall mobility measurements revealed that the carriers are electrons in all the Nb-doped films. The mobility decreases with increasing temperature for all the Nb-doped samples. The Hall mobility measurements for the highly Nb-doped (~ 5 wt.%) film revealed that a larger mobility is obtained for films grown at higher substrate temperatures.

Sign in / Sign up

Export Citation Format

Share Document