Seeded Heteroepitaxy and the Overgrowth of InN Films: Nucleation with Lattice Mismatched AIN

1992 ◽  
Vol 280 ◽  
Author(s):  
Thomas J. Kistenmacher ◽  
Scott A. Ecelberger ◽  
Wayne A. Bryden
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Yttria Stabilized Zirconia ◽  
High Symmetry ◽  
Reactive Magnetron ◽  
Stabilized Zirconia ◽  
Electrical Transport Properties ◽  
Fused Quartz

ABSTRACTThe growth and properties of thin films of InN on a variety of substrates nucleated by a 400Å layer of AIN have been shown to be dependent on the lattice mismatch (LMM) with the substrate. Examples are drawn from growth of InN thin films by reactive magnetron sputtering on high symmetry faces of a variety of crystalline substrates [(00.1) sapphire, (111) silicon and (111) yttria-stabilized zirconia, and (001) mica] and amorphous fused quartz. Striking is a comparison of the electrical transport properties for nucleated and unnucleated InN films. For example, the ratio of the Hall mobilities for nucleated and unnucleated InN films deposited on (00.1) sapphire (LMM for AIN and InN of 13.0% and 29.0%, respectively) is ∼102, while this ratio for nucleated and unnucleated InN films on (111) zirconia (LMM for AIN and InN of −14.8% and −7.8%, respectively) is ∼10−2. While all the factors underlying these results are not necessarily obvious, it is rather apparent that this trend in Hall mobility stems from a contrasting trend in film resistivity at a more nearly constant value for the carrier concentration.

Buffer Layer Thickness and the Properties of InN Thin Films on AIN- Seeded (00.1) Sapphire And (111) Silicon

1994 ◽  
Vol 339 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Electrical Mobility ◽  
Seeded Growth ◽  
Electrical Transport Properties ◽  
Buffer Layer Thickness ◽  
Homogeneous Strain

ABSTRACTIntroduction of a buffer layer to facilitate heteroepitaxy in thin films of the Group IIIA nitrides has had a tremendous impact on growth morphology and electrical transport. While AIN- and self-seeded growth of GaN has captured the majority of attention, the use of AIN-buffered substrates for InN thin films has also had considerable success. Herein, the properties of InN thin films grown by reactive magnetron sputtering on AIN-buffered (00.1) sapphire and (111) silicon are presented and, in particular, the evolution of the structural and electrical transport properties as a function of buffer layer sputter time (corresponding to thicknesses from ∼50Å to ∼0.64 μm) described. Pertinent results include: (a) for the InN overlayer, structural coherence and homogeneous strain normal to the (00.1) growth plane are highly dependent on the thickness of the AIN-buffer layer; (b) the homogeneous strain in the AIN-buffer layer is virtually nonexistent from a thickness of 200Å (where a significant X-ray intensity for (00.2)AIN is observed); and (c) the n-type electrical mobility for films on AIN-nucleated (00.1) sapphire is independent of AIN-buffer layer thickness, owing to divergent variations in carrier concentration and film resistivity. These effects are in the main interpreted as arising from a competition between the lattice mismatch of the InN overlayer with the substrate and with the AIN-buffer layer.

Epitaxial pore-free gadolinia-doped ceria thin films on yttria-stabilized zirconia by RF magnetron sputtering

2013 ◽  
Vol 39 (8) ◽  
pp. 9749-9752 ◽  
Author(s):  
Haris M. Ansari ◽  
Michael D. Rauscher ◽  
Suliman A. Dregia ◽  
Sheikh A. Akbar
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Doped Ceria ◽  
Stabilized Zirconia

Biaxially Aligned Yttria Stabilized Zirconia and Titanium Nitride Layers Deposited by Unbalanced Magnetron Sputtering

2005 ◽  
Vol 105 ◽  
pp. 447-452 ◽  
Author(s):  
Stijn Mahieu ◽  
Pieter Ghekiere ◽  
Griet De Winter ◽  
Roger De Gryse ◽  
Diederik Depla ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Growth Mechanism ◽  
Yttria Stabilized Zirconia ◽  
Crystal Habit ◽  
Stabilized Zirconia ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Biaxial Alignment

Control of the texture and the biaxial alignment of sputter deposited films has provoked a great deal of interest due to its technological importance. Indeed, many physical properties of thin films are influenced by the biaxial alignment. In this context, extensive research has been established to understand the growth mechanism of biaxially aligned Yttria Stabilized Zirconia (YSZ) as a buffer layer for high temperature superconducting copper oxides. In this work, the growth mechanism in general and the mechanism responsible of the biaxial alignment in detail were investigated for thin films of YSZ and TiN deposited by unbalanced magnetron sputtering using non-aligned polycrystalline stainless steel substrates. The mechanism responsible for the preferential out-of-plane alignment has been investigated by performing depositions on a non-tilted substrate. However, to study the in-plane alignment a tilted substrate was used. The microstructure of the deposited layers was characterised by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The crystallographic alignment has been investigated by X-ray diffraction (XRD) (angular scans and pole figures) and by Selective Area Diffraction (SAD). It was observed that the deposited layers show a zone T or zone II structure and the layers with a zone T structure consist of faceted grains. There seems to be a correlation between the crystal habit of these faceted grains and the measured biaxial alignment. A model for the preferential out-ofplane orientation, the in-plane alignment and the correlation between the microstructure and the biaxial alignment is proposed.

Yttria-stabilized zirconia thin films grown by reactive r.f. magnetron sputtering

1996 ◽  
Vol 287 (1-2) ◽  
pp. 104-109 ◽  
Author(s):  
Henryk Tomaszewski ◽  
Johan Haemers ◽  
Jurgen Denul ◽  
Nico De Roo ◽  
Roger De Gryse
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

scholarly journals Reactive magnetron sputtering of uniform yttria-stabilized zirconia coatings in an industrial setup

2012 ◽  
Vol 206 (19-20) ◽  
pp. 4126-4131 ◽  
Author(s):  
S. Sønderby ◽  
A.J. Nielsen ◽  
B.H. Christensen ◽  
K.P. Almtoft ◽  
J. Lu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Reactive Magnetron ◽  
Stabilized Zirconia
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