Effective mass representation in the presence of spin-orbit interaction and magnetic field: Electronic structure of wide band-gap semiconductors

2018 ◽  
Author(s):  
Gouri S. Tripathi ◽  
Subrat K. Shadangi
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Band Gap ◽  
Effective Mass ◽  
Wide Band ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Wide Band Gap ◽  
Spin Orbit Interaction ◽  
Wide Band Gap Semiconductors

The Einstein Relation in Superlattices OP Wide-Band Gap Semiconductors Onder Cross-Field Configuration

1992 ◽  
Vol 242 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Magnetic Field ◽  
Band Gap ◽  
Electron Concentration ◽  
Wide Band ◽  
Field Configuration ◽  
Landau Levels ◽  
Einstein Relation ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
Quantizing Magnetic Field

ABSTRACTin this paper we study the Einstein relation in superlattices of wide-band gap semiconductors under crossfield configuration and the for.-ning materials incorporating spin and broadening of Landau levels, it is found, taking GaAs/AÀAs superlattice as an example that the diffusivity-mobility ratio increases with increasing electron concentration and oscillates with inverse quantizing magnetic field due to SdH effect. Thetheoretical analysis is in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.

Electronic structure of C2N2X (X = O, NH, CH2): Wide band gap semiconductors

2012 ◽  
Vol 112 (1) ◽  
pp. 013537 ◽  
Author(s):  
Kenichi Takarabe ◽  
Masaya Sougawa ◽  
Hiroaki Kariyazaki ◽  
Koji Sueoka
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

Electronic structure investigation of wide band gap semiconductors—Mg2PN3 and Zn2PN3: experiment and theory

2020 ◽  
Vol 32 (40) ◽  
pp. 405504
Author(s):  
Md Fahim Al Fattah ◽  
Muhammad Ruhul Amin ◽  
Mathias Mallmann ◽  
Safa Kasap ◽  
Wolfgang Schnick ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Wide Band ◽  
Structure Investigation ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type
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