Vapor-Phase Growth of Epitaxial and Bulk ZnSe

1992 ◽  
Vol 242 ◽  
Author(s):  
W. L. Ahlgren ◽  
S. Sen ◽  
S. M. Johnson ◽  
W. H. Konkel ◽  
J. A. Vigil ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Chemical Vapor ◽  
Lattice Misfit ◽  
Curve Analysis ◽  
Organic Chemical ◽  
Misfit Dislocations ◽  
Structural Perfection ◽  
Rocking Curve ◽  
X Ray ◽  
Hydrogen Carrier

ABSTRACTEpitaxial and bulk ZnSe of good structural perfection have been grown by vapor-phase techniques. Epitaxial undoped ZnSe layers were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs {100} substrates in a horizontal-flow quartz reactor chamber. Conventional pyrolytic growth at 450°C was used, with diethyl zinc (DEZn) and diethyl selenium (DESe) reactants transported in hydrogen carrier gas.Layers with smooth surface morphology and very good crystal structure were obtained, with no evidence of gas-phase pre-reaction. Sharp electron channeling patterns produced in the scanning electron microscope (SEM) indicated that {100}-oriented ZnSe layers were grown on (100) GaAs surfaces, as expected. X-ray rocking-curve analysis with a silicon four-crystal monochrom-ator gave full-width at half-maximum (FWHM) line widths of 165 to 180 arc-sec for layers 2.5 to 3.0 μm thick, better than values for MOCVD-grown ZnSe/GaAs reported to date in the literature known to us. Cathodoluminescence (CL) imaging in the SEM showed significant defect substructure in the layers, probably due to lattice-misfit dislocations in the interface region. Bright blue CL emission from the layers was observed in the SEM at both 77K and room temperature, indicating the dominance of radiative recombination in the material.Bulk ZnSe crystals were grown using a physical vapor transport technique. The crystals, a few millimeters on a side, had fully developed crystal facets, predominantly {110(-oriented. X-ray rocking-curve analysis gave FWHM values of about 19 arc-sec, indicating excellent structural perfection.

Effect of O2/Ni ratio on structure and surface morphology of atmospheric pressure MOCVD grown NiO thin films

2013 ◽  
Vol 1577 ◽  
Author(s):  
Teuku M. Roffi ◽  
Motohiko Nakamura ◽  
Kazuo Uchida ◽  
Shinji Nozaki
Keyword(s):  
Surface Morphology ◽  
Atmospheric Pressure ◽  
Incident Angle ◽  
Chemical Vapor ◽  
Angle Measurement ◽  
Molar Ratio ◽  
Organic Chemical ◽  
Rocking Curve ◽  
X Ray ◽  
Nio Films

ABSTRACTEffect of oxygen to nickel molar ratio (O2/Ni) on the crystallinity of atmospheric pressure metal organic chemical vapor deposition (APMOCVD) grown NiO at 500°C is reported. X-ray diffraction (XRD) analysis including grazing incident angle θ of 0.6°, θ-2θ, ɸ and rocking curve scan are employed for crystallographic characterization. Furthermore, surface roughness is studied by atomic force microscopy (AFM). No evidence of diffraction peaks in X-ray grazing incident angle measurement confirms that all the grown NiO films are well oriented along a certain direction. θ-2θ scan results further indicate that the samples are highly oriented only along [111] direction on (0001) sapphire substrates. The analysis of full width at half maximum (FWHM) of rocking curve scan of (111) plane shows that higher O2/Ni ratio results in better crystallinity. The best crystallinity is achieved with FWHM as low as 0.106° at (111) rocking curve scan corresponding to 82.57nm grain size. AFM measurement shows that NiO films grown with higher O2/Ni ratio have smoother surface morphology.

Light Power Enhancement of Violet LEDs Using AlGaN-Based Epitaxial Structure

2013 ◽  
Vol 331 ◽  
pp. 572-577 ◽  
Author(s):  
Jin Shun Yue ◽  
Ying Gao ◽  
Guo Hua Zhang ◽  
Yi Liu
Keyword(s):  
Chemical Vapor ◽  
Integrated System ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Light Power ◽  
Rocking Curve ◽  
X Ray ◽  
Power Enhancement ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The growths of AlN and AlGaN materials were carried out in a home-built metal organic chemical vapor deposition (MOCVD) system. The AlN template was characterized by X-ray diffraction (XRD) and it showed the full width at half magnitude (FWHM) of the x-ray (002) scan rocking curve was only 28 arc seconds, while the FWHM of (102) plane was 252 arc seconds. The results suggested a high quality epitaxial material was obtained. Subsequently, an AlGaN-based violet LED was designed on this template by using AlGaN material as the base. The Al composition of electronic blocking layer (EBL) was optimized. By a quick on-wafer electroluminescence (EL) test, it was demonstrated that the output light intensity of the new structure was at least 15% stronger in comparison to that of the traditional GaN-based violet LED. Finally, fully packaged LEDs were fabricated and the luminous power of the new structure was measured by Spherical integrated system. It was confirmed that a 43% increase of the output power can be obtained.

Growth of epitaxial sodium-bismuth-titanate films by metal-organic chemical vapor phase deposition

2011 ◽  
Vol 520 (1) ◽  
pp. 239-244 ◽  
Author(s):  
J. Schwarzkopf ◽  
M. Schmidbauer ◽  
A. Duk ◽  
A. Kwasniewski ◽  
S. Bin Anooz ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Bismuth Titanate ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Sodium Bismuth Titanate ◽  
Vapor Phase Deposition ◽  
Metal Organic

The Performance of Channel Cut Collimators for Precision X-Ray Diffraction Studies of Epitaxial Layers

1990 ◽  
Vol 208 ◽  
Author(s):  
Neil Loxley ◽  
D. Keith Bowen ◽  
Brian K. Tanner
Keyword(s):  
Grazing Incidence ◽  
Curve Analysis ◽  
Epitaxial Layers ◽  
Angular Divergence ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Experimental Performance ◽  
Low Background ◽  
X Ray ◽  
Angle Scattering

ABSTRACTReplacement of the pinhole collimator on a double axis X-ray diffractometer with a device incorporating a channel-cut crystal permits the beam to be pre-conditioned in angular divergence. We examine the merits of such devices, known as channel-cut collimators (CCC's), of different materials and reflections. The experimental performance of InP 004 and Si 022 CCC's is presented.With a reference crystal on the first axis, set in the dispersive peometry with respect to the CCC, conditioning in wavelength spread is achieved. Dispersion broadening is effectively eliminated and no resetting of the reference crystal is required when changing specimen materials or reflections. The devices have extremely low background and reduced Bragg tails. Application of the 4-reflection CCC to rocking curve analysis of thin epitaxial layers, ultra-low angle scattering from biological systems, grazing incidence reflectometry and triple axis diffraction of semi-conductors is discussed.

scholarly journals Влияние толщины пленки Pt на изменение текстуры и доли кристаллической фазы при ее отжиге

2020 ◽  
Vol 90 (5) ◽  
pp. 795
Author(s):  
Р.В. Селюков ◽  
В.В. Наумов
Keyword(s):  
Volume Fraction ◽  
Curve Analysis ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Texture Parameters ◽  
Sputter Deposited ◽  
Pt Films ◽  
H 20

Textured Pt films with thickness h=20-80 nm were sputter deposited on oxidized c-Si (100) wafers and annealed in vacuum at 500°C/60 min. The thickness dependencies of the crystalline texture parameters and of the fraction of crystalline phase δ are obtained for as-deposited and annealed films using X-ray diffraction. The determination of δ in textured films is carried out by the new method based on rocking curve analysis. It is found that annealing leads to the texture improvement and to the increasing of δ for all h. The less h, the stronger effects of texture improvement and of δ increasing. These results are explained by the annealing-induced formation of large secondary grains whose volume fraction increases as h decreases. The inhomogeneity of the depth distributions of texture parameters and of δ are investigated for the as-deposited Pt films.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Automated X Ray Topography and Rocking Curve Analysis: A Readability Study

1987 ◽  
Vol 31 ◽  
pp. 143-154 ◽  
Author(s):  
M. Fatemi
Keyword(s):  
Curve Analysis ◽  
X Ray Diffraction ◽  
Extreme Caution ◽  
Rocking Curve ◽  
X Ray ◽  
Production Type ◽  
Mode Of Operation ◽  
High Resolution Images ◽  
Microelectronics Industry ◽  
Defect Densities

AbstractThere is considerable interest in the microelectronics industry to obtain high-resolution images, as well as precise measures of defect densities in “ device quality” thin films and substrates. In the field of x-ray diffraction, research groups worldwide are intensely pursuing the relevant applications of computerized x-ray rocking curve analysis and topography. Production-type, on-site rocking curve instrumentation has already been introduced into the market, and potential uses of x-ray topography are also under consideration.In the present study, the merits and limitations of these two techniques are critically evaluated. Possible pitfalls of automated data collection are pointed out and conditions under which meaningful measurements may be made are explored. It is shown that reliable results may nearly always be obtained with reasonable care when each method is applied subject to its own mode of operation. However, extreme caution is needed when digitized data initially collected for topography is subsequently used for rocking curve analysis; otherwise, the correspondence between the interpretation and actual defect configuration may be vitiated. Thus, additional tests will be necessary to ensure the validity of the results.

X-ray Characterisation of Residual Surface Strains after Polishing of Silicon Wafers

1989 ◽  
Vol 33 ◽  
pp. 55-60 ◽  
Author(s):  
Linda Hart ◽  
D. Keith Bowen ◽  
Graham R. Fisher
Keyword(s):  
Silicon Wafers ◽  
Curve Analysis ◽  
Rocking Curve ◽  
Strain Profile ◽  
X Ray ◽  
Theoretical Simulations

AbstractDetailed x-ray double-axis rocking-curve analysis has been made of a series of silicon wafers, polished using various colloidal silicas with a number of different conditions. Significant differences, attributable to the polishing conditions, were observed in the tails of the rocking curves, using a four-reflection, non-dispersive beam conditioner. These have been compared with theoretical simulations in order to deduce the strain profile near the surface.

scholarly journals Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

2009 ◽  
Vol 2009 ◽  
pp. 1-6 ◽  
Author(s):  
Tevye Kuykendall ◽  
Shaul Aloni ◽  
Ilan Jen-La Plante ◽  
Taleb Mokari
Keyword(s):  
Rational Design ◽  
Chemical Vapor ◽  
Hybrid Nanostructures ◽  
Engineering Properties ◽  
Hybrid Structures ◽  
Organic Chemical ◽  
Bandgap Energy ◽  
Core Shell ◽  
X Ray ◽  
Gan Nanowires

We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

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