scholarly journals Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

2009 ◽  
Vol 2009 ◽  
pp. 1-6 ◽  
Author(s):  
Tevye Kuykendall ◽  
Shaul Aloni ◽  
Ilan Jen-La Plante ◽  
Taleb Mokari

We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

Nano Letters ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 3782-3788 ◽  
Author(s):  
Han Gao ◽  
Wen Sun ◽  
Qiang Sun ◽  
Hark Hoe Tan ◽  
Chennupati Jagadish ◽  
...  

1997 ◽  
Vol 495 ◽  
Author(s):  
T. S. Moss ◽  
B. F. Espinoza ◽  
K. V. Salazar ◽  
R. C. Dye

ABSTRACTThin film phosphors for field emission displays show the potential to overcome the life-limiting problems that traditional powders face because of their high surface areas. By depositing a fully dense thin film, the surface area can be dramatically reduced, while the electrical and thermal conductivity is increased. Metal organic chemical vapor deposition offers the ability to deposit high quality, dense films that are crystalline-as-deposited and at temperatures low enough to allow for inexpensive glass. Deposition has been produced from mixtures of Y(tmhd)3, TEOS, Tb(tmhd)3, and O2 using a liquid delivery system. Coatings were shown to be composed of Y, Si, and Tb by x-ray fluorescence, but x-ray diffraction did not show any crystallinity. Excitation using radioluminescence produced a peak in the visible green at approximately 540 nm, indicative of the excitation of Tb3+. The morphology of the deposition was smooth, with surface features on the order of one micron and below. Some limited microcracking was also observed in the morphology because of the thermal expansion mismatch.


Nanoscale ◽  
2014 ◽  
Vol 6 (23) ◽  
pp. 14213-14220 ◽  
Author(s):  
Je-Hyung Kim ◽  
Young-Ho Ko ◽  
Jong-Hoi Cho ◽  
Su-Hyun Gong ◽  
Suk-Min Ko ◽  
...  

Broadband visible-light emitting GaN/InGaN core–shell nanostructures were demonstrated by a dislocation-eliminating chemical vapor-phase etching technique followed by metal–organic chemical vapor deposition.


RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8713-8720 ◽  
Author(s):  
Liu Yuan ◽  
Liu Xiangxuan ◽  
Li Rong ◽  
Wen Wu ◽  
Wang Xuanjun

Carbon fiber/carbonyl iron core–shell structure composites with excellent microwave absorbing performance were prepared by a metal organic chemical vapor deposition process.


1999 ◽  
Vol 595 ◽  
Author(s):  
M.L. Caldwell ◽  
H.H. Richardson ◽  
M.E. Kordesch

AbstractAn aluminum nitride (AlN) film deposited on silicon (100) was used as the substrate for growing manganese (Mn) doped AlN film by metal organic chemical vapor deposition (MOVCD). The (15.78 [.proportional]m) under layer of AlN was grown at 615°C at a pressure of 10−4 Torr. The (2.1 [.proportional]m) top layer of Mn-AlN was grown at the same temperature and pressure but doped with pulse valve introduction of the manganese decacarbonyl (100 ms on, 100 ms off). The film was then characterized ex situ with IR reflectance microscopy, X-ray diffraction, scanning electron microscopy imaging, cathodoluminescence, and X-ray fluorescence. The IR reflectance measurements showed a strong (A1) LO mode for AlN at 920 cm−1 and 900 cm−1 with a shoulder at 849 cm−1. X-ray Diffraction yielded three diffraction peaks at a 2ø position of 33, 36 and 38 degrees corresponding to 100, 002, and 101 lattice planes respectively. Cathodoluminescence results show strong visible emitted light from incorporated manganese. The relative percentage of manganese to aluminum was below the detection limit (0.01 %) of the Xray fluorescence spectrometer. Amorphous Mn doped AlN films have also been grown using a low temperature atomically abrupt sputter epitaxial system. The amorphous Mn doped AlN showed no cathodoluminescence.


2009 ◽  
Vol 421-422 ◽  
pp. 135-138
Author(s):  
Ken Nishida ◽  
Minoru Osada ◽  
Shintaro Yokoyama ◽  
Takafumi Kamo ◽  
Takashi Fujisawa ◽  
...  

Micro-patterned Pb(Zr,Ti)O3 (PZT) films with dot-pattern were grown by metal organic chemical vapor phase deposition (MOCVD). Micro-patterned Pb(Zr,Ti)O3 (PZT) films were formed on dot-patterned SrRuO3 (SRO) buffer layer that was prepared by MOCVD through the metal mask on (111)Pt/Ti/SiO2/Si substrate. The orientation of dot-patterned PZT films was ascertained by the micro-beam x-ray diffraction (XRD) and their crystallinity was characterized by Raman spectroscopy. It was found that PZT films were oriented to (111) on dot-pattern, while (100)/(001) out of dot-pattern and the amount of oxygen vacancies at the circumference of the dot-pattern were larger than that of center of dot-pattern.


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