Electrical Properties of Fine Grain Composite Carbon Films

1992 ◽  
Vol 242 ◽  
Author(s):  
Hsiung Chen ◽  
R. O. Dillon
Keyword(s):  
Electrical Properties ◽  
Amorphous Carbon ◽  
Composite Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Average Roughness ◽  
Force Microscopy ◽  
Fine Grain ◽  
Hot Filament

ABSTRACTWe have studied the electrical properties of boron doped composite films that consist of diamond and amorphous carbon. These films were deposited by hot filament chemical vapor deposition at a relatively high carbon/hydrogen ratio. The mixture of trimethyl borate vapor, and methane served as a source gas. The composite films had much smoother surfaces than polycrystalline diamond films.The surface morphology and average roughness were determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Raman spectroscopy and x-ray diffraction were used to analyze the structure of the films.A composite film grown with 4% methane in hydrogen had a higher resistivity than a well faceted diamond film grown at 0.5% methane. In contrast to hydrogenated amorphous carbon films which have a lower resistivity after thermal annealing, the resistivities of composite films increased by a factor of two to ten after 3 hours annealing at 600°C.

Characterization and Tribological Properties of Nanostructured Copper/Carbon Composite Films Prepared by Microwave Plasma-Assisted Dual Deposition Processes

2002 ◽  
Vol 750 ◽  
Author(s):  
François Thiery ◽  
Yves Pauleau ◽  
Jacques Pelletier
Keyword(s):  
Amorphous Carbon ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Composite Films ◽  
Chemical Vapor ◽  
Carbon Matrix ◽  
Carbon Composite ◽  
Carbon Films ◽  
Radius Of Curvature

ABSTRACTNanocrystalline copper/hydrogenated amorphous carbon films have been deposited on Si substrates at the floating potential using a distributed electron cyclotron resonance microwave plasma reactor. In this deposition technique, the microwave plasma-enhanced chemical vapor deposition process of carbon from argon-methane or argon-acetylene mixtures of various compositions was associated with the sputter deposition of copper from a copper target. The total pressure was fixed at 0.13 Pa. For deposition, the substrates mounted on a water-cooled substrate holder were maintained at ambient temperature. The composition of films determined by Rutherford backscattering spectroscopy, energy recoil detection analyses and nuclear reaction analyses was investigated as a function of the gas phase composition. The structure of films was identified by X-ray diffraction (XRD) techniques and the size of copper crystallites incorporated in the amorphous carbon matrix was deduced from XRD data. The magnitude of residual stresses developed in these films was calculated from the radius of curvature of film/substrate samples determined by profilometry. The residual stress values were found to be nearly independent on the composition of films and deposition parameters.

Area Selective Laser Chemical Vapor Deposition of Diamond

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Lindstam ◽  
M. Boman ◽  
K. Larsson ◽  
G. Stenberg ◽  
J.-O. Carlsson
Keyword(s):  
Substrate Temperature ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Scanning Force Microscopy ◽  
Silicon Substrates ◽  
Laser Chemical Vapor Deposition ◽  
Force Microscopy ◽  
Scanning Force ◽  
Hot Filament

ABSTRACTHigh quality diamond spots were deposited on silicon substrates by a hot filament process combined with laser heating. A mixture of CH4(1.8 vol%) and H2was passed over a tantalum filament having a temperature of about 2200 °C. The substrate temperature was varied by small adjustments of the filament power. A focused laser beam was used to locally raise the temperature on the substrate surface. By a proper choice of filament temperature, background substrate temperature and laser induced temperature, isolated islands of polycrystalline diamond could be deposited on the silicon substrate. The deposited diamond spots were characterized by micro-Raman spectroscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy and scanning force microscopy.

A NOVEL OF SURFACE WAVE MICROWAVE PLASMA CVD METHOD ON THE PREPARATION OF NITROGENATED AMORPHOUS CARBON FILMS

2005 ◽  
Vol 19 (05) ◽  
pp. 857-867
Author(s):  
M. RUSOP ◽  
S. ADHIKARY ◽  
A. M. M. OMER ◽  
S. ADHIKARI ◽  
H. UCHIDA ◽  
...  
Keyword(s):  
Surface Wave ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Films ◽  
X Rays ◽  
Plasma Chemical Vapor Deposition

We have studied the influence of the methane gas ( CH 4) pressure on the surface morphology, composition, structural and electrical properties of nitrogenated amorphous carbon ( a-C:N ) films grown by surface wave microwave plasma chemical vapor deposition (SWMP-CVD) using Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Auger electron spectroscopy (AES), X-rays photoelectron spectroscopy (XPS), UV-visible spectroscopy and 4-point probe resistance measurement. We have succeeded in growing a-C:N films using a novel method of SWMP-CVD at room temperature and found that the surface morphology, bonding, optical and electrical properties of a-C:N films are strongly dependent on the CH 4 gas sources and the a-C:N films grown at higher CH 4 gas pressure have relatively high electrical conductivity.

Study of the Effects of Heavy-Ion Radiation on Nanocomposite Carbon Films

2003 ◽  
Vol 777 ◽  
Author(s):  
Kathleen E. Kristian ◽  
Nadia M. Medina-Emmanuelli ◽  
Oscar O. Ortiz ◽  
Adolfo González ◽  
Juan A. González ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Chemical Vapor ◽  
Heavy Ion ◽  
Carbon Films ◽  
Information Storage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Composite Nature ◽  
Hot Filament ◽  
Carbon Bonding

AbstractThe compositional and microstructural transformations induced by heavy ions (GeV/amu Fe and Si ions) on nanocomposite carbon (n-C) films were investigated by Raman Spectroscopy (RS), Atomic Force Microscopy (AFM), and X-ray Photoelectron Spectrscopy (XPS). Two identical sets of n-C films were prepared in a sulfur-assisted hot filament chemical vapor deposition (HFCVD) system using methane, hydrogen and hydrogen sulfide. Films with various sp3 C and sp2 C bonding distributions were present within each set, which were obtained by varying the substrate temperature (400-600 °C). One set of films was submitted to a 20 krad dose of energetic Si and Fe ions at the NASA space radiation simulation facility hosted in Brookhaven National Laboratory's Alternating Gradient Synchrotron (AGS). All the films showed the characteristic diamond (tetragonal sp3 C) band at around 1332 cm-1 and the graphitic (trigonal sp2 C) D and G bands at around 1350 and 1590 cm-1, respectively, evidencing their composite nature. The results indicate that sp2 C ←sp3 C interconversions take place in the nanocomposite carbon material during heavy ion irradiation. A mechanism is proposed to explain this behavior. The overall results imply that there could be a range of sp3/sp2 C ratios for which carbon bonding interconversion takes place under ion radiation without significant changes to the average composition of the material. Nanocomposite carbon materials with this characteristic would be radiation insensitive. A technique could be developed based on this carbon bonding interconversion property by using focused energetic beams onto carbon films to produce a robust information storage technology that would survive catastrophic events.

Thin Film Carbon Layers with Continously Changing Bonding Properties

2007 ◽  
Vol 537-538 ◽  
pp. 207-214
Author(s):  
Gergely Kovách ◽  
Gábor Pető ◽  
Albert Karacs ◽  
M. Veres ◽  
Hajnalka Csorbai ◽  
...  
Keyword(s):  
Lower Energy ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Ion Bombardment ◽  
Peak Position ◽  
Carbon Films ◽  
Laser Deposition ◽  
Energy Part ◽  
Bonding Properties ◽  
Electron Energy Loss

Polycrystalline diamond and diamond-like carbon (DLC) films were deposited by microwave chemical vapor deposition (MW-CVD) and by pulsed laser deposition (PLD) respectively. Ar ion bombardment was used to change the properties of these layers. The sp2 bonds were determined directly by reflected electron energy loss spectroscopy (REELS) and further characterization was made by Raman scattering. The polycrystalline diamond showed only very slight π-π* transition at 6.5 eV, but after Ar ion bombardment strong peak was formed but definitely shifted to lower energy compared to the well known π-π* transition of graphite. The as deposited PLD carbon films showed broad peak around 5eV clearly different than the π-π* transition (6.5eV). After Ar+ ion bombardment the peak was shifted also to lower energy range (4-5eV) with a remaining part at 6.5eV. The lower energy part of the peak can be correlated to the transition of sp3 sites, while this change in peak position was not detectable after ion bombardment of the reference HOPG sample, which does not contain sp3 hybridized carbon atoms.

Examination of the material properties and performance of thin-diamond film cutting tool inserts produced by arc-jet and hot filament chemical vapor deposition

1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Cutting Tool ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
And Performance ◽  
Hot Filament

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.

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