Characterization of the Si/Diamond Interface

1992 ◽  
Vol 242 ◽  
Author(s):  
K. E. Williams ◽  
J. S. Speck ◽  
M. D. Drory

ABSTRACTAuger spectroscopy is used to determine the bonding states of carbon in the interfacial region between silicon and PECVD diamond films. SiC and sp2-hybridized carbon are observed. We suggest a possible growth sequence for diamond films to account for the interfacial layer.

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  

1994 ◽  
Vol 12 (4) ◽  
pp. 1491-1495 ◽  
Author(s):  
Dieter M. Gruen ◽  
Xianzheng Pan ◽  
Alan R. Krauss ◽  
Shengzhong Liu ◽  
Jianshu Luo ◽  
...  

1993 ◽  
Vol 2 (5-7) ◽  
pp. 694-698 ◽  
Author(s):  
Hsien-Wen Ko ◽  
S.E. Hsu ◽  
S.J. Yang ◽  
M.S. Tsai ◽  
Y.H. Lee

2010 ◽  
Vol 204 (12-13) ◽  
pp. 1997-2001 ◽  
Author(s):  
Monika Karásková ◽  
Lenka Zajíčková ◽  
Vilma Buršíková ◽  
Daniel Franta ◽  
David Nečas ◽  
...  

1995 ◽  
Vol 4 (4) ◽  
pp. 517-519 ◽  
Author(s):  
C. Manfredotti ◽  
F. Fizzotti ◽  
M. Boero ◽  
E. Vittone ◽  
P. Polesello

2004 ◽  
Vol 455-456 ◽  
pp. 318-322 ◽  
Author(s):  
H. Ahn ◽  
H.-W. Chen ◽  
D. Landheer ◽  
X. Wu ◽  
L.J. Chou ◽  
...  

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