Characterization of the Si/Diamond Interface
Keyword(s):
ABSTRACTAuger spectroscopy is used to determine the bonding states of carbon in the interfacial region between silicon and PECVD diamond films. SiC and sp2-hybridized carbon are observed. We suggest a possible growth sequence for diamond films to account for the interfacial layer.
1991 ◽
Vol 47
(1-3)
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pp. 677-686
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1994 ◽
Vol 12
(4)
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pp. 1491-1495
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2007 ◽
Vol 390
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pp. 151-154
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1995 ◽
Vol 4
(7)
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pp. 948-953
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1993 ◽
Vol 2
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pp. 694-698
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2010 ◽
Vol 204
(12-13)
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pp. 1997-2001
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1994 ◽
1995 ◽
Vol 4
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pp. 517-519
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