Optical Anisotropy in a GaAs/AlAs Quantum Wire Array Grown on Vicinal Substrate

1991 ◽  
Vol 240 ◽  
Author(s):  
H. Kanbe ◽  
A. Chavez-Pirson ◽  
M. Kumagai ◽  
H. Saito ◽  
T. Fukui
Keyword(s):  
Quantum Wire ◽  
Optical Anisotropy ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Wire Array ◽  
Chemical Vapor ◽  
Cross Sectional ◽  
Polarization Spectroscopy ◽  
Cross Sectional Size

ABSTRACTThe optical properties of a quantum wire array which was successfully realized in a 4-nm-thick (GaAs)1/2 (AlAs)1/2 fractional-layer superlattice (FLS) are described. The FLS sample was grown by metalorganic chemical vapor deposition on a (001) vicinal GaAs substrate tilted 2 ° towards [110]. The nominal cross sectional size of the GaAs wires is 4×4 nm. Optical anisotropy in absorption, refractive index and photoluminescence was clearly observed by polarization spectroscopy at room temperature as well as lower temperatures.

scholarly journals Characteristics of MOCVD-Grown High-Quality CdTe Layers on GaAs Substrates

1995 ◽  
Vol 18 (4) ◽  
pp. 247-258
Author(s):  
P. W. Sze ◽  
K. F. Yarn ◽  
Y. H. Wang ◽  
M. P. Houng ◽  
G. L. Chen
Keyword(s):  
Growth Temperature ◽  
Vapor Deposition ◽  
Gaas Substrate ◽  
Concentration Ratio ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Double Crystal ◽  
X Ray ◽  
Gaas Substrates ◽  
Growth System

CdTe epitaxial layers are grown successfully on a (100)-GaAs substrate by metalorganic chemical vapor deposition (MOCVD) using dimethylcadrnium (DMCd) and diethyltelluride (DETe) as alkyl sources. The CdTe epilayers grown between 365°C and 380°C possess the best surface morphology. DETe is used as the controlling species of this growth system. Typical growth rates are varied from 2.51µm/hr to 5.31µm/hr. Low-temperature (12K) photoluminscence (PL) measurements reveal that 380°C is the best growth temperature and the full width at half maximum (FWHM) of the dominated peak is about 1.583eV by the bound-exciton emission of 9.38meV. The double crystal X-ray rocking curves (DCRC) indicate that the FWHM decreases while increasing the epilayer thickness and approaches a stable value about 80 arc sec under the growth rate of 5.2µm/hr, the growth temperature of 380°C and the DETe/DMCd concentration ratio of 1.7. The value of 80 arc sec in FWHM is the smallest one ever reported to date.

The Properties of GaInAsSb/GaSb Heterostructure Grown by Mocvd and P-GaInAsSb/N-GaSb Photodiodes

1995 ◽  
Vol 415 ◽  
Author(s):  
Baolin Zhang ◽  
Yixin Jin ◽  
Tianming Zhou ◽  
Hong Jiang ◽  
Yongqiang Ning ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Long Wavelength ◽  
Measurement Results ◽  
P Type ◽  
Metalorganic Chemical

ABSTRACTGaInAsSb/GaSb heterostructures have been grown by metalorganic chemical vapor deposition (MOCVD). The optical properties were characterized using low temperature(71K) photoluminescence(PL) and infrared transmission spectroscopy. The FWHM of the typical PL spectrum peaked at 2.3μm is 30meV. Hall measurement results for undoped GaInAsSb layers are presented showing a p-type background and low hole concentration of 6.5 × 1015cm−3. The room temperature performances of the p-GaInAsSb/n-GaSb photodiodes are reported. Its responsivity spectrum is peaked at 2.2 5μm and cuts off at 1.7μm in the short wavelength and at 2.4μm in the long wavelength, respectively. The room temperature detectivity D* is of 1 × 109cm.Hz1/2.W−2

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