Microhardness Characterization of 80/20 MOL % TiO2/SiO2 Sol-Gel Films

1991 ◽  
Vol 239 ◽  
Author(s):  
S. M. Melpolder ◽  
A. W. West ◽  
C. L. Bauer
Keyword(s):  
Thin Film ◽  
Indentation Depth ◽  
Sol Gel ◽  
Knoop Hardness ◽  
Film Properties ◽  
Knoop Microhardness ◽  
Sol Gel Films ◽  
Microscopy Techniques ◽  
Substrate Influence

ABSTRACTKnoop hardness and nanoindentation studies were performed on single and multilayered 80/20 mol % TiO2/SiO2 films spin-coated onto [100] silicon wafers. The Knoop microhardness results indicated that a total sol-gel thickness (h) to indentation depth (h*) ratio of >2 was sufficient to obtain reliable thin film properties independent of substrate influence. Electron microscopy techniques were used to determine the sample's absolute film thickness, to examine the morphology of the indentations, and to determine the phase of the sol-gel thin films.

Synthesis of WO3 Electrochromic Sensor by Sol-Gel Method and Characterization of Its Electrochemical and Optical Properties

2006 ◽  
Vol 317-318 ◽  
pp. 807-810 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Jin Wook Choi ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dip Coating ◽  
Xrd Pattern ◽  
Starting Solution ◽  
Oxide Crystal ◽  
Heat Treated ◽  
Coating Method ◽  
Dip Coating Method

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Thin Film Properties of Sol-Gel Derived High-K Lanthanum-Doped Zirconium Oxides

2009 ◽  
Vol 384 (1) ◽  
pp. 126-133 ◽  
Author(s):  
Ho-Seung Jeon ◽  
Joo-Nam Kim ◽  
Gwang-Geun Lee ◽  
Yun-Soo Choi ◽  
Byung-Eun Park
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Film Properties ◽  
Zirconium Oxides ◽  
High K

Characterization of SiO2 Thin Film Obtained by the Sol-Gel Route from TEOS and Triton X45

Langmuir ◽  
1995 ◽  
Vol 11 (10) ◽  
pp. 3970-3974 ◽  
Author(s):  
P. Piaggio ◽  
A. Bottino ◽  
G. Capannelli ◽  
E. Carosini ◽  
A. Julbe
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Sio2 Thin Film

Sol–gel synthesis and characterization of Ag2S nanocrystallites in silica thin film glasses

1999 ◽  
Vol 9 (11) ◽  
pp. 2893-2898 ◽  
Author(s):  
Lidia Armelao ◽  
Paolo Colombo ◽  
Monica Fabrizio ◽  
Silvia Gross ◽  
Eugenio Tondello
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Synthesis And Characterization ◽  
Silica Thin Film ◽  
Sol Gel Synthesis

Characterization of spinel Co3O4 and Li-doped Co3O4 thin film electrocatalysts prepared by the sol–gel route

2000 ◽  
Vol 45 (25-26) ◽  
pp. 4359-4371 ◽  
Author(s):  
F Švegl ◽  
B Orel ◽  
I Grabec-Švegl ◽  
V Kaučič
Keyword(s):  
Thin Film ◽  
Sol Gel

Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

1998 ◽  
Vol 520 ◽  
Author(s):  
A. Maldonado ◽  
D.R. Acosta ◽  
M. De La Luz Olvera ◽  
R. Castanedo ◽  
G. Torres ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Film Properties ◽  
Preferential Growth ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

Sign in / Sign up

Export Citation Format

Share Document