Characterization of SiO2 Thin Film Obtained by the Sol-Gel Route from TEOS and Triton X45

Langmuir ◽  
1995 ◽  
Vol 11 (10) ◽  
pp. 3970-3974 ◽  
Author(s):  
P. Piaggio ◽  
A. Bottino ◽  
G. Capannelli ◽  
E. Carosini ◽  
A. Julbe
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Sio2 Thin Film

scholarly journals Synthesis and Characterization of TiO2/SiO2 Thin Film via Sol-Gel Method

2017 ◽  
Vol 209 ◽  
pp. 012002 ◽  
Author(s):  
D S C Halin ◽  
M M A B Abdullah ◽  
N Mahmed ◽  
S N A Abdul Malek ◽  
P Vizureanu ◽  
...  
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Synthesis And Characterization ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sio2 Thin Film

Synthesis of WO3 Electrochromic Sensor by Sol-Gel Method and Characterization of Its Electrochemical and Optical Properties

2006 ◽  
Vol 317-318 ◽  
pp. 807-810 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Jin Wook Choi ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dip Coating ◽  
Xrd Pattern ◽  
Starting Solution ◽  
Oxide Crystal ◽  
Heat Treated ◽  
Coating Method ◽  
Dip Coating Method

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Sol–gel synthesis and characterization of Ag2S nanocrystallites in silica thin film glasses

1999 ◽  
Vol 9 (11) ◽  
pp. 2893-2898 ◽  
Author(s):  
Lidia Armelao ◽  
Paolo Colombo ◽  
Monica Fabrizio ◽  
Silvia Gross ◽  
Eugenio Tondello
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Synthesis And Characterization ◽  
Silica Thin Film ◽  
Sol Gel Synthesis

Characterization of spinel Co3O4 and Li-doped Co3O4 thin film electrocatalysts prepared by the sol–gel route

2000 ◽  
Vol 45 (25-26) ◽  
pp. 4359-4371 ◽  
Author(s):  
F Švegl ◽  
B Orel ◽  
I Grabec-Švegl ◽  
V Kaučič
Keyword(s):  
Thin Film ◽  
Sol Gel
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