Characterization of Thin Films by Internal Friction Measurements

1991 ◽  
Vol 239 ◽  
Author(s):  
H. G. Bohn ◽  
C. M. Su
Keyword(s):  
Internal Friction ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Al Alloy ◽  
Alloy Films ◽  
Boundary Relaxation ◽  
Friction Measurements ◽  
Influence Of Impurities

ABSTRACT: Internal friction has been employed to characterize various properties of thin Al and Al-alloy films. The grain boundary relaxation peak was useda) to determine the activation energies for grain boundary diffusion in the alloy films,b) to investigate the influence of impurities on the grain boundary diffusion in Al at concentration levels as low as 300 ppm, andc) to get information about the adhesion strength between the film and the substrate.

Grain Boundary Relaxation in a Fe-Cr-Al Alloy

2011 ◽  
Vol 415-417 ◽  
pp. 2134-2137
Author(s):  
Zheng Cun Zhou ◽  
Q. Z. Wang ◽  
J. Du ◽  
H. Yang ◽  
Y.J. Yan
Keyword(s):  
Activation Energy ◽  
Grain Size ◽  
Internal Friction ◽  
Grain Boundary ◽  
Relaxation Peak ◽  
Al Alloy ◽  
Relaxation Strength ◽  
Exponential Factor ◽  
Friction Temperature ◽  
Boundary Relaxation

The features of grain boundary relaxation of a (wt.%)Fe-25Cr-5Al alloy have been investigated using a multifunction internal friction apparatus. The grain boundary relaxation peak appears at about 630oC on the internal friction-temperature curves for the alloy. The peak temperature shifts toward high temperature with increasing frequency. In terms of Arrihenius relation, the activation energy is calculated to be 4.07(±0.15)eV and the pre-exponential factor is 6.2×10-24±1s. Grain boundary relaxation strength remarkably decreases with increasing grain size. When grain size reaches 520μm, the grain boundary relaxation peak almost disappears.

Texture Control and Electromigration Performance in Al-Based and Cu-Based Layered Interconnects

1998 ◽  
Vol 514 ◽  
Author(s):  
Makiko Kageyama ◽  
Kazuhide Abe ◽  
Yusuke Harada ◽  
Hiroshi Onoda
Keyword(s):  
Grain Boundary ◽  
Epitaxial Growth ◽  
Refractory Metal ◽  
Boundary Diffusion ◽  
Early Stage ◽  
Grain Boundary Diffusion ◽  
Al Alloy ◽  
Interfacial Diffusion ◽  
Atomic Arrangement ◽  
Atomic Distance

ABSTRACTTexture control of Al and Cu by underlying refractory metal is discussed. Al texture can be controlled with underlayer metals like as Ti and TiN which have the same atomic arrangement within 3% misfits to Al. Cu texture can be also controlled by underlayer TiN in spite of a large difference in inter-atomic distance of Cu and TiN. Since the epitaxial growth of TiN on Cu is observed, it is suggested that epitaxial growth may occur at the early stage of Cu deposition on TiN.The electromigration performance was evaluated in double level interconnects with W-stud via. It is confirmed that highly <111> textured Al and Cu have high electromigration resistance. Both the diffusion of Cu in Al-Cu and Al drift are suppressed in <111> textured Al-alloy interconnects, and Cu drift is also suppressed in Cu damascene lines formed on <111> textured TiN. Grain boundary diffusion and the interfacial diffusion would be suppressed in highly textured metals with underlayer and it is speculated that interfacial diffusion is more important in Cu damascene lines.

Fabrication and Characterization of MgO Bicrystals

1993 ◽  
Vol 318 ◽  
Author(s):  
Michael Liberatore ◽  
B.J. Wuensch ◽  
I.G. Solorzano ◽  
J.B. Vander Sande
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Chemical Vapor ◽  
Grain Boundary Diffusion ◽  
Chemical Vapor Transport ◽  
Symmetric Tilt ◽  
Preferential Diffusion ◽  
Tilt Boundaries ◽  
Fabrication And Characterization

ABSTRACTHigh purity bicrystals of MgO have been grown using chemical vapor transport for the purpose of studying oxygen grain boundary diffusion. Preliminary data indicate preferential diffusion of oxygen along ∑ 13 symmetric tilt boundaries. The measured grain boundary diffusivities were approximately 4 orders of magnitude higher than the corresponding bulk values. The activation energies for bulk and grain boundary diffusion were found to be equal to within experimental error, (≈3.9eV)

GRAIN BOUNDARY DIFFUSION OF BULK INTERSTITIALS IN ALPHA-ZIRCONIUM

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-691-C1-696 ◽  
Author(s):  
K. VIEREGGE ◽  
R. WILLECKE ◽  
Chr. HERZIG
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion

Room-temperature grain boundary diffusion data measured from historical artifacts

2005 ◽  
Vol 96 (10) ◽  
pp. 1187-1192 ◽  
Author(s):  
Raymond J. Kremer ◽  
Mysore A. Dayananda ◽  
Alexander H. King
Keyword(s):  
Grain Boundary ◽  
Room Temperature ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Diffusion Data
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