Room-temperature grain boundary diffusion data measured from historical artifacts

2005 ◽  
Vol 96 (10) ◽  
pp. 1187-1192 ◽  
Author(s):  
Raymond J. Kremer ◽  
Mysore A. Dayananda ◽  
Alexander H. King
Keyword(s):  
Grain Boundary ◽  
Room Temperature ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Diffusion Data

Low-Temperature Grain Boundary Diffusion Data Measured from Historical Artifacts

2004 ◽  
Vol 852 ◽  
Author(s):  
R.J. Kremer ◽  
M.A. Dayananda ◽  
A.H. King
Keyword(s):  
Low Temperature ◽  
Grain Boundary ◽  
Room Temperature ◽  
Boundary Diffusion ◽  
Diffusion Processes ◽  
Grain Boundary Diffusion ◽  
Accelerated Tests ◽  
Temperature Diffusion ◽  
Diffusion Profiles

ABSTRACTDiffusion processes in typical metals are slow at room temperature but there are many applications for which very long-term use is envisaged and stability needs to be assured over a timescale of 10, 000 years, where even slow processes can be important. It is common to perform accelerated tests at higher temperatures and extrapolate the necessary information from the measurements so obtained. We have tested the validity of this type of extrapolation for room-temperature, grain boundary diffusion in the copper-silver system, by measuring low-temperature diffusion profiles in antique samples of Sheffield plate.

The formation of intermetallics in Cu/In thin films

1992 ◽  
Vol 7 (6) ◽  
pp. 1377-1386 ◽  
Author(s):  
Rita Roy ◽  
S.K. Sen ◽  
Suchitra Sen
Keyword(s):  
Electron Microscopy ◽  
Activation Energy ◽  
Grain Boundary ◽  
Room Temperature ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Contact Electrical Resistance ◽  
Higher Temperature

The kinetics of the formation of intermetallics in the Cu–In bimetallic thin film couple have been studied from room temperature to 432 K by measuring the evolution of composite and contact electrical resistance with time and temperature. The resistivity measurements have been supplemented by x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Copper reacts with indium even at room temperature to form CuIn intermetallic and assuming a model of defect assisted diffusion into the grains, the activation energy averaged over five different samples is found to be 0.40 eV. The grain boundary diffusion is found to occur with an average activation energy of 0.55 eV. XRD confirms the growth of CuIn intermetallic and on annealing at higher temperature, for copper-rich films copper further reacts with CuIn to form Cu9In4. Further evidences of solid state reactions and grain boundary diffusion through Cu grain boundaries have been obtained from SEM study. TEM indicates the growth of the grain size on annealing and confirms the presence of the CuIn phase.

GRAIN BOUNDARY DIFFUSION OF BULK INTERSTITIALS IN ALPHA-ZIRCONIUM

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-691-C1-696 ◽  
Author(s):  
K. VIEREGGE ◽  
R. WILLECKE ◽  
Chr. HERZIG
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion
Sign in / Sign up

Export Citation Format

Share Document