Evolution of Intrinsic Stress During Nucleation and Growth of Polycrystalline Tungsten Films by Chemical Vapor Deposition.

1991 ◽  
Vol 239 ◽  
Author(s):  
G. J. Leusink ◽  
T. G. M. Oosterlaken ◽  
G. C. A. M. Janssen ◽  
S. Radelaar
Keyword(s):  
Experimental Study ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Growth Stress ◽  
Model System ◽  
Intrinsic Stress ◽  
Evolution Of Microstructure

AbstractWe present in situ measurements of the intrinsic (growth) stress during nucleation and growth of thin tungsten films by chemical vapor deposition. It is shown that interfering stress sources, as recrystallization or plasic flow, do not contribute to the intrinsic stress in these films. This makes W-CVD a model system for the experimental study of the relation between the evolution of microstructure and the development ofgrowth stress.

Nucleation and Growth Processes During the Chemical Vapor Deposition of Diamond

1994 ◽  
Vol 363 ◽  
Author(s):  
Yaxin Wang ◽  
Edward A. Evans ◽  
Christopher S. Kovach ◽  
Uziel Landau ◽  
John C. Angus
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Diamond Growth ◽  
Impurity Incorporation ◽  
Simple Criterion ◽  
Thiele Modulus ◽  
Hot Filament

AbstractIn situmicrobalance measurements of diamond growth rates are described. These results can be used to test proposed mechanisms for diamond growth and suggest mechanisms for sp2impurity incorporation. The Thiele modulus is a simple criterion for growth uniformity and is used to compare hot-filament and combustion-assisted growth.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped

Ti3C2MXenes modified with in situ grown carbon nanotubes for enhanced electromagnetic wave absorption properties

2017 ◽  
Vol 5 (16) ◽  
pp. 4068-4074 ◽  
Author(s):  
Xinliang Li ◽  
Xiaowei Yin ◽  
Meikang Han ◽  
Changqing Song ◽  
Hailong Xu ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electromagnetic Wave ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Absorption Properties ◽  
Electromagnetic Wave Absorption ◽  
Catalytic Chemical Vapor Deposition ◽  
Wave Absorption

Ti3C2TxMXenes modified within situgrown carbon nanotubes (CNTs) are fabricatedviaa simple catalytic chemical vapor deposition (CVD) process.

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