The Role Of Ion Species On The Adhesion Enhancement Of ION Beam Mixed Fe/Al2O3 Systems

1991 ◽  
Vol 238 ◽  
Author(s):  
J. E. Pawel ◽  
C. J. Mchargue ◽  
L. J. Romana ◽  
L. L. Horton ◽  
J. J. Wert
Keyword(s):  
Interfacial Energy ◽  
Peak Concentration ◽  
Ion Beam ◽  
Scratch Test ◽  
Film Deposition ◽  
Ion Concentration ◽  
Concentration Profiles ◽  
Pull Test ◽  
Ion Species

ABSTRACTThe role of the ion species on the adhesion enhancement of ion beam mixed Fe/Al2O3 systems has been investigated. The ion implantations were carried out after film deposition using Cr (300 keV), Fe (320 keV), or Ni (340 keV) ions. The adhesion of the films was measured by a pull test and a scratch test. While the three types of implantation result in similar ion concentration profiles (with the peak concentration at the interface) and similar damage profiles, the three species were not equally effective in improving the adhesion. The effects are proposed to be due to changes in the interfacial energy resulting from both the damage and the presence of the ion species at the interface.

Duplex Hard Coatings with Aditional Ion Implantation

2012 ◽  
Vol 157-158 ◽  
pp. 1320-1323
Author(s):  
Branko Škorić ◽  
D. Kakaš ◽  
G. Favato ◽  
A. Miletić ◽  
M. Arsenovic
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Scratch Test ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Hard Coatings ◽  
X Ray ◽  
Atomic Force ◽  
Tin Thin Films

In this paper, we present the results of a study of TiN thin films which are deposited by a Physical Vapour Deposition (PVD) and Ion Beam Assisted Deposition (IBAD). In the present investigation the subsequent ion implantation was provided with N2+ ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of effects such as crystallographic orientation, morphology, topography, densification of the films.. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM), Atomic Force Microscope (AFM), X-ray diffraction (XRD) and Energy Dispersive X-ray analysis (EDAX).

Using Weibull Statistics to Analyze Ion Beam Enhanced Adhesion as Measured by the pull Test

1991 ◽  
Vol 239 ◽  
Author(s):  
J. E. Pawel ◽  
W. E. Lever ◽  
D. J. Downing ◽  
C. J. Mchargue ◽  
L. J. Romana ◽  
...  
Keyword(s):  
Weibull Distribution ◽  
Failure Probability ◽  
Random Distribution ◽  
Ion Beam ◽  
Film Deposition ◽  
Test Results ◽  
Adhesion Test ◽  
Iron Films ◽  
Weibull Statistics ◽  
Pull Test

ABSTRACTThe adhesion of iron films to single crystal Al2O3 substrates was investigated using a pull test. Chromium (300 keV) or nickel (340 keV) ions were implanted to a fluence of 1 × 1015 ions-cm-2 after film deposition. The adhesion test results were widely scattered due to a random distribution of interfacial flaw sizes controlling the failure nucleation. Because Weibull statistics were developed to describe the failure probability due to a population of flaw-initiated cracks, the Weibull distribution was chosen to analyze the data. Modifications in the adhesion strength due to the ion implantation were reflected in the failure distributions. It was found that the chromium ions improved the adhesion of the Fe/Al2O3 system while the implantation of nickel did not.

The Competition between Ion Beam Induced Epitaxial Crystallization and Amorphization in Silicon: The Role of the Divacancy

1986 ◽  
Vol 74 ◽  
Author(s):  
J. Linnros ◽  
R. G. Elliman ◽  
W. L. Brown
Keyword(s):  
Activation Energy ◽  
Dose Rate ◽  
Dynamic Equilibrium ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Linear Displacement ◽  
Epitaxial Crystallization ◽  
Critical Dose ◽  
Ion Species

AbstractThe transition from ion induced epitaxial crystallization to planar amorphization of a preexisting amorphous layer in silicon has been investigated. The conditions for dynamic equilibrium at the transition were determined for different ion species as a function of dose rate and temperature. The critical dose rate for equilibrium varies exponentially with 1/T, exhibiting an activation energy of ∼1.2 eV. Furthermore, for different ions, the critical dose rate is inversely proportional to the square of the linear displacement density created by individual ions. This second order defect production process and the activation energy, which is characteristic of divacancy dissociation, suggest that the accumulation of divacancies at the amorphous/crystalline interface controls the balance between crystallization and amorphization.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

Applications of Energy Beams in Material and Device Processing

1983 ◽  
Vol 23 ◽  
Author(s):  
G.J. Galvin ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
M. Nastasi
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Traditional Role ◽  
Near Surface ◽  
Device Processing ◽  
Composition Modification ◽  
Directed Energy ◽  
Transistor Fabrication

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.

scholarly journals Chemical Composition and Corrosion Behavior of a-C:H/DLC Film-Coated Titanium Substrate in Simulated PEMFC Environment

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 820
Author(s):  
Beibei Han ◽  
Mengyuan Yan ◽  
Dongying Ju ◽  
Maorong Chai ◽  
Susumu Sato
Keyword(s):  
Corrosion Resistance ◽  
Corrosion Behavior ◽  
Metal Ion ◽  
Ion Beam ◽  
Titanium Substrate ◽  
Corrosion Current ◽  
Ion Concentration ◽  
Bipolar Plates ◽  
High Adhesion ◽  
Corrosion Behaviors

The amorphous hydrogenated (a-C:H) film-coated titanium, using different CH4/H2 and deposition times, was prepared by the ion beam deposition (IBD) method, which has the advantage of high adhesion because of the graded interface mixes at the atomic level. The chemical characterizations and corrosion behaviors of a-C:H film were investigated and evaluated by SEM, AFM, Raman spectroscopy, EPMA, TEM and XPS. An a-C:H film-coated titanium was corroded at 0.8 V, 90 °C in a 0.5 mol/L H2SO4 solution for 168 h. The metal ion concentration in the H2SO4 corrosion solution and the potentiodynamic polarization behavior were evaluated. Results indicate that a higher CH4/H2 of 1:0 and a deposition time of 12 h can result in a minimum ID/IG ratio of 0.827, Ra of 5.76 nm, metal ion concentration of 0.34 ppm in the corrosion solution and a corrosion current of 0.23 µA/cm2. The current density in this work meets the DOE’s 2020 target of 1 µA/cm2. Electrical conductivity is inversely proportional to the corrosion resistance. The significant improvement in the corrosion resistance of the a-C:H film was mainly attributed to the increased sp3 element and nanocrystalline TiC phase in the penetration layer. As a result, the a-C:H film-coated titanium at CH4/H2 = 1:0 with improved anti-corrosion behavior creates a great potential for PEMFC bipolar plates.

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Role of ion beam etching in the fabrication of ramp-type junctions

2001 ◽  
Vol 351 (3) ◽  
pp. 200-214 ◽  
Author(s):  
U. Schoop ◽  
M. Schonecke ◽  
S. Thienhaus ◽  
S. Schymon ◽  
L. Alff ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching
Sign in / Sign up

Export Citation Format

Share Document