Characterization of Inconel/Carbon Multilayer Structures

1991 ◽  
Vol 238 ◽  
Author(s):  
J. Liu ◽  
Y. Cheng ◽  
M. W. Lund ◽  
Q. Wang ◽  
A. Higgs
Keyword(s):  
High Resolution Electron Microscopy ◽  
Optical Systems ◽  
Multilayer Structures ◽  
High Angle ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
X Ray Scattering ◽  
Resolution Electron ◽  
Microscopy Techniques

ABSTRACTDC magnetron sputtering technique is used to fabricate inconel/carbon multilayers (ML) for applications in soft x-ray optical systems. The ML films were characterized by small angle x-ray scattering (SAXS), high resolution electron microscopy (HREM) and high-angle annular darkfield (HAADF) microscopy techniques. The HREM showed that the ML films are composed of smooth layers of amorphous components. The HAADF showed strong interdiffusion between inconel and carbon. There is no indication of any pure inconel or carbon regions in the ML films.

Atomic Level Investigations of W-Si Multilayers by High Resolution Tem and X Ray Scattering

1987 ◽  
Vol 103 ◽  
Author(s):  
S. R Nutt ◽  
J. E. Keem
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Interface Roughness ◽  
Bilayer Thickness ◽  
Individual Layer ◽  
X Ray ◽  
X Ray Scattering ◽  
Resolution Electron ◽  
Ray Scattering

ABSTRACTWe have prepared multilayer films of W-Si with bilayer repeat spacing from approximately 1.5 nm to 9 nm and performed high resolution electron microscopy and low angle x-ray scattering on them. Average composition estimates as inferred from deposition conditions, x ray scattering and electron microscopy are compared. Determinations of the individual layer thickness ratios by electron microscopy and x ray scattering vary significantly from expectations as the bilayer thickness approaches 1.5 nm. Layer intermixing to increase as the bilayer thickness decreases. Composition profiles as inferred from the Cuk x ray profile are compared to those inferred from the high resolution electron micrographs. Visual observations from melectron microscopy are presented indicating that the interface roughness is rapidly damped in the W-Si multilayer system. Estimates of the layer uniformity are made from the high resolution images.

Defect structure and chemistry of (Ca x Sr 1-x ) n+1 Ti n 0 3n+1 layer perovskites

1991 ◽  
Vol 336 (1644) ◽  
pp. 541-569 ◽  
Keyword(s):  
Neutron Diffraction ◽  
Alkaline Earth ◽  
Structural Information ◽  
High Resolution Electron Microscopy ◽  
Oxide Superconductors ◽  
Orthorhombic Symmetry ◽  
X Ray ◽  
Resolution Electron ◽  
The Stability

The Ruddlesden-Popper structural family is constructed from ordered intergrowths of rocksalt type (AX) layers with perovskite (ABX 3 ) blocks of varying widths, yielding phases with the general formula n ABX 3 AX where 1 < n < ∞ In this article, the characterization of (Ca x Sr 1-x ) n+1 Ti n O 3n+1 layer perovskites by powder X-ray and neutron diffraction and high resolution electron microscopy is described. These phases undergo a phase transition from tetragonal to orthorhombic symmetry at x = 0.65. Structure solutions of neutron diffraction data are presented for the end-member phases Sr 3 Ti 2 O 7 (I4/mmm), Ca 3 Ti 2 O 7 (Ccm2 1 ) and Ca 4 Ti 3 O 10 (Pcab). Refinement of the mixed alkaline earth preparation (Ca 0.85 Sr 0.15 ) 4 Ti 3 O 10 showed that Sr partitioned preferentially to the perovskite blocks rather than the rocksalt layers. Ordered and disordered intergrowths of rocksalt layers were found on the{101} orth = {100} tet perovskite planes with extensive disorder most prevalent in samples annealed for short periods (less than 24 hours). Evidence is presented for the existence of V"A and V"," point defects in the intermediate structures that precede the formation of ordered layer sequences. These data are discussed in terms of existing thermodynamic and structural information. For generalized Ruddlesden Popper phases the relation between chemistry and symmetry is reviewed and factors contributing to the stability of different n -members enunciated. For completeness, the (Ca x Sr 1-x ) n+1 Ti n O 3n+1 perovskites are considered as the structural prototypes of the oxide superconductors being a subset of an extended n ABX 3 mAX Ruddlesden-Popper family.

High‐resolution electron microscopy study of x‐ray multilayer structures

1987 ◽  
Vol 61 (4) ◽  
pp. 1422-1428 ◽  
Author(s):  
Amanda K. Petford‐Long ◽  
Mary Beth Stearns ◽  
C.‐H. Chang ◽  
S. R. Nutt ◽  
D. G. Stearns ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Multilayer Structures ◽  
X Ray ◽  
Resolution Electron

Quantitative characterization of epitaxial superlattices by x‐ray diffraction and high resolution electron microscopy

1993 ◽  
Vol 63 (4) ◽  
pp. 482-484 ◽  
Author(s):  
Eric E. Fullerton ◽  
Wei Cao ◽  
Gareth Thomas ◽  
Ivan K. Schuller ◽  
Matthew J. Carey ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
X Ray Diffraction ◽  
Quantitative Characterization ◽  
X Ray ◽  
Resolution Electron

Morphology of Vapor Evaporated Mo Thin Films

1991 ◽  
Vol 222 ◽  
Author(s):  
Y. Cheng ◽  
M. B. Stearns
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Large Angle ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
X Ray ◽  
X Ray Scattering ◽  
Resolution Electron ◽  
Deposition Angle

ABSTRACTStudies were made of the dependence of the morphology of Mo films, prepared by ebeam evaporation in an UHV system, on the substrate temperature and deposition angle. The main characterization techniques used were large angle x-ray scattering and cross-sectional high resolution electron microscopy.

Characterization of Ultrathin Doping Layers in Semiconductors

1997 ◽  
Vol 3 (4) ◽  
pp. 352-363 ◽  
Author(s):  
C.P. Liu ◽  
R.E. Dunin-Borkowski ◽  
C.B. Boothroyd ◽  
P.D. Brown ◽  
C.J. Humphreys
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
High Angle ◽  
Compositional Profile ◽  
Resolution Electron ◽  
Annular Dark Field ◽  
Contrast Analysis

Abstract: The compositional profile of a narrow layer of InAsxPl−x in InP has been determined using energy-filtered Fresnel contrast analysis, high-resolution electron microscopy (HREM), and high-angle annular dark-field (HAADF) imaging. The consistency of the results obtained using the three techniques is discussed, and conclusions are drawn both about the validity of interpreting the magnitude of Fresnel contrast data quantitatively and about the degree to which high-angle annular dark-field images of such materials are affected by inelastic scattering and strain.

Structural Characterization Of Laser Lift-Off GaN

2000 ◽  
Vol 617 ◽  
Author(s):  
Eric A. Stach ◽  
M. Kelsch ◽  
W.S. Wong ◽  
E.C. Nelson ◽  
T. Sands ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Characterization ◽  
High Resolution Electron Microscopy ◽  
Economic Benefits ◽  
Thin Layers ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Lift Off ◽  
Microscopy Techniques

AbstractLaser lift-off and bonding has been demonstrated as a viable route for the integration of III-nitride opto-electronics with mainstream device technology. A critical remaining question is the structural and chemical quality of the layers following lift-off. In this paper, we present detailed structural and chemical characterization of both the epitaxial layer and the substrate using standard transmission electron microscopy techniques. Conventional diffraction contrast and high resolution electron microscopy indicate that the structural alteration of the material is limited to approximately the first 50 nm. Energy dispersive electron spectroscopy line profiles show that intermixing is also confined to similar thicknesses. These results indicate that laser lift-off of even thin layers is likely to result in materials suitable for device integration. Additionally, because the damage to the sapphire substrate is minimal, it should be possible to polish and re-use these substrates for subsequent heteroepitaxial growths, resulting in significant economic benefits.

scholarly journals High-temperature structural behavior of Ni/Au Contact on GaN(0001)

2001 ◽  
Vol 6 ◽  
Author(s):  
Chong Cook Kim ◽  
Jong Kyu Kim ◽  
Jong-Lam Lee ◽  
Jung Ho Je ◽  
Min-Su Yi ◽  
...  
Keyword(s):  
Structural Evolution ◽  
High Resolution Electron Microscopy ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
X Ray Scattering ◽  
Smooth Interface ◽  
Resolution Electron ◽  
Device Reliability ◽  
Relationship Of

We investigated the structural evolution of the Ni/Au contact on GaN(000l) during annealing in N2, using in-situ x-ray diffraction, anomalous x-ray scattering, and high resolution electron microscopy. GaN decomposition occurred mostly along GaN dislocations at temperature higher than 500°C. The decomposed Ga diffused into Au and Ni substitutional positions, and the decomposed nitrogen reacted with Ni, forming Ni4N. Interestingly, Ni4N was grown epitaxially. The epitaxial relationship of the Ni4N, Au, and Ni was identified as M(111)//GaN(0002) and M[1 −1 0]//GaN[1 1 −2 0] (M= Ni4N, Au, and Ni). At dislocation free regions, however, the atomically smooth interface remained intact up to 700 °C. Remarkable improvement of device reliability is expected in the contact on dislocation free regions compared with the contact on dislocations.

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