Comparison of Different Thickness Measurements of Oxide Films on Silicon

1991 ◽  
Vol 238 ◽  
Author(s):  
Shou-Chen Kao ◽  
Robert H. Doremus
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Thermal Oxidation ◽  
Oxidation Kinetics ◽  
Oxide Films ◽  
Transmission Electron ◽  
Parabolic Relationship ◽  
Thickness Measurements ◽  
Different Thickness

ABSTRACTThe thermal oxidation of silicon in dry oxygen is examined with three different thickness measurements: Ellipsometry, transmission electron microscopy and step-profile measurements. The oxidation kinetics follow a linear-parabolic relationship throughout the measured thickness range. Previous deviations from linear-parabolic behavior result from inaccurate ellipsometer measurements of film thickness for films thinner than 0.05 /zm.

The Effects of Interface Roughness on Ellipsometric Measurements of Thin Oxides

1987 ◽  
Vol 105 ◽  
Author(s):  
Scott T. Dunham ◽  
Bhawana Agrawal
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Transmission Electron ◽  
Thickness Measurements

AbstractMeasurements of film thickness using ellipsometry assume all interfaces to be ideally planar. This approximation works well for films much thicker than the roughness of the interfaces. For very thin films. the interface roughness can cause significant errors in thickness measurements. In this paper, we calculate the effect of interface roughness on oxide thickness measurements and use those calculations to account for some of the observed differences between film thickness measurements of thin oxides (< 200 A) as measured by ellipsometry and transmission electron microscopy.

The amorphous to crystalline transition of ultrathin (Al,Mg)-oxide films grown by thermal oxidation of AlMg alloys: A high-resolution transmission electron microscopy investigation

2010 ◽  
Vol 25 (5) ◽  
pp. 871-879 ◽  
Author(s):  
Emila Panda ◽  
Lars P.H. Jeurgens ◽  
Gunther Richter ◽  
Eric J. Mittemeijer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Oxide Film ◽  
Thermal Oxidation ◽  
Photoelectron Spectroscopy ◽  
Oxide Films ◽  
Relative Depth ◽  
Face Centered Cubic ◽  
Transmission Electron

The microstructural evolution of ultrathin (<3 nm) oxide films grown on bare Al-based AlMg alloy substrates, by thermal oxidation in the temperature range of 300 to 610 K and at partial oxygen pressures in the range 10−4–10−2 Pa, was investigated by high-resolution transmission electron microscopy. Angle-resolved x-ray photoelectron spectroscopy was applied to establish the chemical constitution of the analyzed oxide films (i.e., the overall Al/Mg cationic ratio, as well as the relative depth distributions of Al and Mg in the grown oxide films). The ˜0.8-nm-thick (Al,Mg)-oxide film grown at 300 K is fully amorphous. A gradual development of long-range order in the oxide film sets in for thickening (Al,Mg)-oxide films of relatively high Mg content at T ≥ 475 K. The amorphous-to-crystalline transition proceeds by a phase separation: still predominantly amorphous oxide regions exist next to crystallized oxide regions, which are constituted of an MgO-type of oxide phase with a face-centered-cubic oxygen sublattice and an average lattice parameter of 4.146 ± 0.1 Å.

Surface Films on Zircaloy-2 Samples Cracked in Neutral Aqueous NaCl by Stress Corrosion

1973 ◽  
Vol 31 ◽  
pp. 46-47
Author(s):  
R.A. Ploc
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Stress Corrosion ◽  
Zirconium Dioxide ◽  
Surface Film ◽  
Surface Films ◽  
Continuous Layer ◽  
Transmission Electron ◽  
Product Film

Samples of low-nickel Zircaloy-2 (material MLI-788-see(1)), when anodically polarized in neutral 5 wt% NaCl solutions, were found to be susceptible to pitting and stress corrosion cracking. The SEM revealed that pitting of stressed samples was occurring below a 2000Å thick surface film which behaved differently from normal zirconium dioxide in that it did not display interference colours. Since the initial film thickness was approximately 65Å, attempts were made to examine the product film by transmission electron microscopy to deduce composition and how the corrosion environment could penetrate the continuous layer.

Structure of vacuum-deposited Zn3P2 films

1986 ◽  
Vol 64 (10) ◽  
pp. 1369-1373 ◽  
Author(s):  
U. von Sacken ◽  
D. E. Brodie
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Columnar Structure ◽  
Major Effect ◽  
Film Structure ◽  
Electron Bombardment ◽  
Initial Growth ◽  
Transmission Electron

The structure of polycrystalline Zn3P2 films has been studied for 1- to 2-μm-thick vacuum-deposited films on glass substrates. Transmission electron microscopy and X-ray diffraction techniques have been used to obtain a detailed, quantitative analysis of the film structure. The initial growth consists of small (≤ 10 nm), randomly oriented grains. As the film thickness increases, the growth of crystallites with the {220} planes oriented approximately parallel to the substrate is favoured, and a columnar structure develops along with a highly preferred orientation. This structure has been observed directly by transmission electron microscopy of thin cross sections of the films. The size of the grains at the free surface increases with the film thickness, reaching approximately 200–300 nm when the film is 1 μm thick. The effects of substrate temperature and low-energy (0.5–2 keV) electron bombardment of the film during growth have also been studied. Neither substrate temperature nor electron bombardment appear to have a major effect on the film structure. The primary effect of electron bombardment appears to be the creation of preferred nucleation sites on the substrate.

Characterization of spray-pyrolized superconducting YBaCuO thin films on single-crystal MgO by transmission electron microscopy

1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Processing Parameters ◽  
Transmission Electron ◽  
Film Substrate ◽  
Mgo Substrate

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.

Epitaxy of Nb3 Sn Films on Sapphire

1984 ◽  
Vol 37 ◽  
Author(s):  
A. F. Marshall ◽  
F. Hellman ◽  
B. Oh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Domain Structure ◽  
High Temperatures ◽  
Defect Structure ◽  
Epitaxial Relationship ◽  
Crystal Matrix ◽  
Transmission Electron

AbstractFilms of Nb3Sn vapor deposited at low rates and high temperatures on (1102) sapphire form an epitaxial <100> single crystal matrix with a domain structure of misoriented regions bounded by low-angle dislocation boundaries. Nucleation of other orientations at the interface result in a highly oriented but polycrystalline film through approximately the first thousand Angstroms of film thickness. After this point random orientations become overgrown by epitaxial <100> regions. At slightly lower temperatures many small <100> grains with a second epitaxial relationship also nucleate at the interface. These rotated grains persist through greater thicknesses than random orientations. The misorientation defect structure of the single crystal matrix is analyzed by transmission electron microscopy.

Identification of the Failure Mechanism of a Thin Film on a Thick Substrate by Means of Synchrotron X-Ray Topography Combined with Transmission Electron Microscopy

1987 ◽  
Vol 108 ◽  
Author(s):  
D. Goyal ◽  
W. Ng ◽  
A. H. King ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Film Stress ◽  
Silicon Substrates ◽  
X Ray ◽  
Transmission Electron ◽  
Thick Substrate

ABSTRACTWe have used synchrotron x-ray topographic techniques to study the stresses in thin films formed upon silicon substrates either by evaporation or sputtering. It is found that the film stress generally decreases with increasing film thickness for evaporated films, but film delamination occurs at a well defined film thickness. Transmission electron microscope studies have been performed on the same specimens in order to reveal what mechanisms are involved with the delamination of the films.

Threading Dislocations in InxGabxAs/GaAs System

1991 ◽  
Vol 240 ◽  
Author(s):  
M. Tamura ◽  
A. Hashimoto ◽  
Y. Nakatsugawa
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Cross Section ◽  
Molecular Beam ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Edge Type ◽  
Transmission Electron ◽  
Fixed Film

ABSTRACTThreading dislocation morphologies and characters, as well as their generation conditions in InxGa1−xAs films grown by molecular-beam epitaxy on GaAs (001) substrates have been examined, mainly using cross-section al transmission electron microscopy (XTEM) as a function of x and film thickness. The formation of severe threading dislocations is detected in epilayers ofx≧0.2 at a fixed film thickness of 3 μm and with film thicknesses greater than 2μmat x=0.2. Most of the observed threading dislocations are 60°- and pure-edge type dislocations along the <211> and [001] directions, respectively. The former type dislocations are mainly observed in layers of x≧0.2; the latter predominantly exist in layers of X≧O.3.

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