Observations of chromium-oxide films containing cerium and yttrium using transmission electron microscopy

1995 ◽  
Vol 43 (5-6) ◽  
pp. 411-433 ◽  
Author(s):  
David A. Downham ◽  
Sanjay B. Shendye
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chromium Oxide ◽  
Oxide Films ◽  
Transmission Electron

Transmission electron microscopy investigations of defects in molecular beam epitaxy-grown oxide films

1997 ◽  
Vol 251 (1-2) ◽  
pp. 11-14 ◽  
Author(s):  
E.J. Williams ◽  
A. Daridon ◽  
F. Arrouy ◽  
J. Perret ◽  
Y. Jaccard ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Oxide Films ◽  
Transmission Electron

Comparison of Different Thickness Measurements of Oxide Films on Silicon

1991 ◽  
Vol 238 ◽  
Author(s):  
Shou-Chen Kao ◽  
Robert H. Doremus
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Thermal Oxidation ◽  
Oxidation Kinetics ◽  
Oxide Films ◽  
Transmission Electron ◽  
Parabolic Relationship ◽  
Thickness Measurements ◽  
Different Thickness

ABSTRACTThe thermal oxidation of silicon in dry oxygen is examined with three different thickness measurements: Ellipsometry, transmission electron microscopy and step-profile measurements. The oxidation kinetics follow a linear-parabolic relationship throughout the measured thickness range. Previous deviations from linear-parabolic behavior result from inaccurate ellipsometer measurements of film thickness for films thinner than 0.05 /zm.

The amorphous to crystalline transition of ultrathin (Al,Mg)-oxide films grown by thermal oxidation of AlMg alloys: A high-resolution transmission electron microscopy investigation

2010 ◽  
Vol 25 (5) ◽  
pp. 871-879 ◽  
Author(s):  
Emila Panda ◽  
Lars P.H. Jeurgens ◽  
Gunther Richter ◽  
Eric J. Mittemeijer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Oxide Film ◽  
Thermal Oxidation ◽  
Photoelectron Spectroscopy ◽  
Oxide Films ◽  
Relative Depth ◽  
Face Centered Cubic ◽  
Transmission Electron

The microstructural evolution of ultrathin (<3 nm) oxide films grown on bare Al-based AlMg alloy substrates, by thermal oxidation in the temperature range of 300 to 610 K and at partial oxygen pressures in the range 10−4–10−2 Pa, was investigated by high-resolution transmission electron microscopy. Angle-resolved x-ray photoelectron spectroscopy was applied to establish the chemical constitution of the analyzed oxide films (i.e., the overall Al/Mg cationic ratio, as well as the relative depth distributions of Al and Mg in the grown oxide films). The ˜0.8-nm-thick (Al,Mg)-oxide film grown at 300 K is fully amorphous. A gradual development of long-range order in the oxide film sets in for thickening (Al,Mg)-oxide films of relatively high Mg content at T ≥ 475 K. The amorphous-to-crystalline transition proceeds by a phase separation: still predominantly amorphous oxide regions exist next to crystallized oxide regions, which are constituted of an MgO-type of oxide phase with a face-centered-cubic oxygen sublattice and an average lattice parameter of 4.146 ± 0.1 Å.

The Photoluminescence from (Eu, Yb) Co-Doped Silicon-Rich Si Oxides

2014 ◽  
Vol 936 ◽  
pp. 207-211
Author(s):  
Cheng Lin Heng ◽  
Wen Yong Su ◽  
Qi Wei Zhang ◽  
X.Q. Ren ◽  
P.G. Yin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Pl Intensity ◽  
Co Doped ◽  
The Eu

We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon oxide films with different Si excess. After annealing the films in N2, strong PL were observed from Eu and Yb3+ ions and their intensities are correlated. The PL intensity of Eu is mainly from 3+ for no and relatively low temperature anneals (<900 °C) while the Eu2+ emission is dominating for annealing at 1000 °C or above in the co-doped Si-rich oxide films. Transmission electron microscopy shows amorphous (Eu, Yb, Si, O)-containing precipitates in the Si-rich oxide during 1000-1200 °C annealing and these precipitates are considered to be responsible for the Eu2+-related luminescence.

Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

1971 ◽  
Vol 29 ◽  
pp. 204-205
Author(s):  
G. G. Shaw
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Pure Aluminum ◽  
Ion Milling ◽  
Transmission Electron ◽  
Fiber Matrix ◽  
Ion Erosion ◽  
Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

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