Structural and Electrical Properties of ZnO Films Deposited on GaAs Substrates by RF Magnetron Sputtering

1991 ◽  
Vol 238 ◽  
Author(s):  
Hong Koo Kim ◽  
Michelle Mathur
Keyword(s):  
Rf Magnetron Sputtering ◽  
Breakdown Field ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates ◽  
Deposition Parameters ◽  
Structural And Electrical Properties ◽  
Deposited Films

ABSTRACTSputter deposition of ZnO films on GaAs substrates has been investigated. ZnO Alms were deposited using a ZnO compound target in Ar or Ar/O2 (95/5) ambient. Deposition parameters such as RF power, substrate-target distance, and gas composition/pressure were optimized to obtain highly c-axis oriented and highly resistive films. Deposited films were characterized by X-ray diffraction, scanning electron microscopy, capacitance, resistivity, and breakdown field strength measurements. X-ray diffraction measurements show a strong (0002)-plane peak with a full-width-half-maximum of less than 1°, indicating that the ZnO films deposited on GaAs substrates are highly c-axis oriented. DC resistivities of the films were measured to be on the order of 1011 Ω-cm.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Properties of Nano-ZnO Films Deposited by RF Magnetron Sputtering for SAW Biosensors

2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Nano Zno ◽  
Axis Orientation ◽  
X Ray

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Effects of Substrate Pre-deposition Annealing and Deposition Parameters on the Properties of RF Sputter-deposited ZnO Films

2012 ◽  
Vol 1394 ◽  
Author(s):  
T. N. Oder ◽  
M. McMaster ◽  
A. Smith ◽  
N. Velpukonda ◽  
D. Sternagle
Keyword(s):  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Sapphire Substrates ◽  
Deposition Parameters ◽  
Ultra High Purity ◽  
Luminescence Peak ◽  
Sputter Deposited ◽  
P Type

ABSTRACTZinc Oxide thin films were deposited on sapphire substrates by radio frequency (RF) magnetron sputtering from an ultra-high purity ZnO solid target. The ZnO films were deposited on sapphire substrates heated in oxygen and/or in vacuum prior to deposition. Additional parameters investigated included the substrate temperature varied from 25 °C to 600 °C, the deposition gas pressure varied from 5 mTorr to 40 mTorr and the gas flow rate varied from 5 to 30 standard cubic centimeter per minute (sccm). The resulting films were annealed using a rapid thermal processor in N2 gas at 900 °C for 5 min. Analyses carried out using photoluminescence spectroscopy (PL) and X-ray diffraction (XRD) measurements indicate that films deposited at 300 °C using Ar:O2 (1:1) had the best optical and microstructure qualities. Pre-heating the sapphire substrate in oxygen prior to deposition was found to create a smoother sapphire surface, and this produced a ZnO film with greatly improved qualities. This film had a luminescence peak at 3.362 eV with a full-width-half maximum (FWHM) value of 15.3 meV when measured at 11 K. The XRD 2θ-scans had peaks at 34.4° with the best FWHM value of only 0.10°. Production of high quality ZnO materials is a necessary step towards realizing highly conductive p-type doped ZnO materials which is currently a major goal in research efforts on ZnO.

X-ray diffraction characterization of MOVPE ZnSe films deposited on (100) GaAs using conventional and high-resolution diffractometers

2009 ◽  
Vol 24 (2) ◽  
pp. 78-81 ◽  
Author(s):  
T. N. Blanton ◽  
C. L. Barnes ◽  
M. Holland ◽  
K. B. Kahen ◽  
S. K. Gupta ◽  
...  
Keyword(s):  
High Resolution ◽  
Phase Identification ◽  
Pin Diode ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sample Throughput ◽  
Gaas Substrates ◽  
Deposition Parameters

ZnSe-based heterostructures grown on GaAs substrates have been investigated for use in pin-diode LED applications. In this study, a conventional Bragg-Brentano diffractometer (BBD) has been used to screen samples for phase identification, crystallite size, presence of polycrystalline ZnSe, and initial rocking curve (RC) analysis. A limitation of the conventional diffractometer is that the smallest RC full width at half maximum (FWHM) that can be achieved is 500 to 600 arc sec. As deposition parameters are optimized and the RC limit of the conventional diffractometer is reached, analysis is moved to a four-bounce high-resolution diffractometer (HRD). Although more time for analysis is required, using the HRD has a RC resolution advantage, where RCs of <20 arc sec are obtained for neat GaAs wafers. Combining the BBD and HRD instruments for analysis of ZnSe films grown on GaAs substrates allows for an efficient means of high sample throughput combined with an accurate measurement of film alignment.

Effects of Sputtering Parameters on the Properties of Sputtered ZnO Films

2010 ◽  
Vol 160-162 ◽  
pp. 1541-1544
Author(s):  
Bo Huang ◽  
Hui Dong Yang
Keyword(s):  
Crystal Structure ◽  
Total Pressure ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Quartz Glass Substrate ◽  
X Ray Diffraction ◽  
High Quality ◽  
Experimental Conditions ◽  
X Ray ◽  
Deposition Power

The ZnO films were deposited on quartz glass substrate by RF magnetron sputtering. The influences of the deposition power, the Ar/O2 ratio and the total press on the crystallinity of ZnO films were analyzed by X-ray diffraction. The results show that the films deposited at Ar/O2 ratio of 2:3 have better crystalline quality under our experimental conditions. The optimum power is about 120-160 W. The crystal structure was significantly influenced by the total pressure in the chamber. The total press should below 1 Pa in order to get high quality ZnO films.

Growth of highly oriented La0.84Sr0.16MnO3 perovskite films

1995 ◽  
Vol 10 (10) ◽  
pp. 2518-2522 ◽  
Author(s):  
Brandon W. Chung ◽  
Eric L. Brosha ◽  
Fernando H. Garzon ◽  
Ian D. Raistrick ◽  
Robert J. Houlton ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Rf Magnetron Sputtering ◽  
Scanning Tunneling ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Tunneling Microscopy ◽  
Sputtering Deposition ◽  
X Ray ◽  
Deposited Films

We have grown thin films of La0.84Sr0.16MnO3 on SrTiO3 (100), MgO (100), CeO2 (100)/Al2O3, and (100) oriented yttria-stabilized zirconia (YSZ) substrates by using a 90°off-axis RF magnetron sputtering deposition. X-ray diffraction analysis and ion beam channeling experiments reveal that the deposited films grow epitaxially on SrTiO3, biaxially textured on MgO, and highly textured on YSZ. Scanning tunneling microscopy reveals that the thin films possess extremely smooth surfaces.

X-Ray Line Broadening Analysis of Ybacuo Superconducting Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
M. Ece ◽  
R.W. Vook ◽  
John P. Allen
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Superconducting Thin Films ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Flash Evaporation ◽  
Critical Temperatures ◽  
X Ray ◽  
Deposited Films ◽  
Nonuniform Strain

AbstractThin films of YBaCuO were prepared on MgO and SrTi03/Al2 03 substrates by rf magnetron sputtering. The SrTi03 was deposited onto AI2O3 by flash evaporation. The as‐deposited films on both substrates had an (001) orientation and were superconductors. Annealing the films in O2 improved their crystal 1inity and raised their critical temperatures (Tc). A detailed X‐ray diffraction study of the YBaCuO films was carried out. Values for the particle sizes and nonuniform strains along the c axis were obtained from broadened diffraction lines by using an integral breadth method. It was found that the broadening was mainly caused by nonuniform strain. It was also observed that nonuniform strain decreased as the films were annealed at various temperatures. The Tc's of the films were very sensitive to changes in nonuniform strain.

scholarly journals Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

2021 ◽  
Vol 127 (10) ◽  
Author(s):  
Somayeh Asgary ◽  
Elnaz Vaghri ◽  
Masoumeh Daemi ◽  
Parisa Esmaili ◽  
Amir H. Ramezani ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Sputtering Power ◽  
Microstructural Surface ◽  
Deposited Films

AbstractIn this research, aluminum (Al) thin films were deposited on SiO2/Si substrates using RF magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphologies. Different sputtering RF powers (100–400 W) were employed to form Al thin films. The characteristics of deposited Al thin films are investigated using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Fourier-transforms infrared (FTIR) spectroscopy. The X-ray diffraction (XRD) results demonstrate that the deposited films in low sputtering power have amorphous nature. By increasing the sputtering power, crystallization is observed. AFM analysis results show that the RF power of 300 W is the optimum sputtering power to grow the smoothest Al thin films. FTIR results show that the varying RF power affect the chemical structure of the deposited films. The SEM results show that by increasing the sputtering power leads to the formation of isolated texture on the surface of substrate. In conclusion, RF power has a significant impact on the properties of deposited films, particularly crystallization and shape.

Structural and Electro-Physical Properties of ZnO Films, Obtained by a MOCVD Method on Glass and Silicon Substrates

2015 ◽  
Vol 230 ◽  
pp. 205-210 ◽  
Author(s):  
K.A. Avramenko ◽  
Nina N. Roshchina ◽  
G.P. Olkhovik ◽  
Petro S. Smertenko ◽  
Lyudmyla V. Zavyalova
Keyword(s):  
Electrical Transport ◽  
Electronic Devices ◽  
Zno Films ◽  
Silicon Substrates ◽  
Transport Mechanisms ◽  
X Ray Diffraction ◽  
Zno Film ◽  
X Ray ◽  
Current Voltage ◽  
Structural And Electrical Properties

This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc and diethyldithiocarbamate of zinc on silicon substrates at 280-320 оС substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.

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