Dislocation Dissociation in the Σ13 Grain Boundary in Silicon

1991 ◽  
Vol 238 ◽  
Author(s):  
Laurent Sagalowicz ◽  
Richard Beanland ◽  
William A. T. Clark
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Crystal Lattice ◽  
Dislocation Structure ◽  
Alternative Structures ◽  
Transmission Electron ◽  
Dislocation Dissociation

ABSTRACTTransmission electron microscopy has been used to study the atomic and dislocation structure of deformed and undeformed Σ13 {510} boundary in Si. It is shown that there are several alternative structures for this boundary, which may be separated by imperfect and partial grain boundary dislocations. It is also shown that the dissociation of crystal lattice dislocations which interact with the boundary during deformation results is far more complicated than simple geometrical models applicable in monatomic materials predicts.

High-Resolution Transmission Electron Microscopy Studies of a Near Sigma11 Grain Boundary in alpha-Alumina

1994 ◽  
Vol 77 (2) ◽  
pp. 339-348 ◽  
Author(s):  
Thomas Hoche ◽  
Philip R. Kenway ◽  
Hans-Joachim Kleebe ◽  
Manfred Ruhle ◽  
Patricia A. Morris
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Transmission Electron ◽  
Alpha Alumina

Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Grain Boundary ◽  
Boundary Motion ◽  
High Temperature Annealing ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Grain Boundary Motion

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.

Microstructural Studies of High Coercivity Nd15Fe77B8 Sintered Magnets

1987 ◽  
Vol 96 ◽  
Author(s):  
M. H. Ghandehari ◽  
J. Fidler
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Electron Microprobe ◽  
Boundary Phase ◽  
High Coercivity ◽  
Transmission Electron ◽  
Microstructural Studies ◽  
Domain Reversal

ABSTRACTMicrostructures of Nd15−xDyxFe77B8 prepared by alloying with Dy, and by using Dy2O3 as a sinl'ken adidive, have been determined using electron microprobe and transmission electron microscopy. The results have shown a higher Dy concentration near the grain boundaries of the 2–14–1 phase for magnets doped with Dy2O 3, as compared to the Dy-alloyed magnets. A two-step post sintering heat treatment was also studied for the two systems. The resultant concentration gradient of Dy in the 2–14–1 phase of the oxide-doped magnets is explained by the reaction of Dy2O3 with the Nd-rich grain boundary phase and its slow diffusion into thg 4–14–1 phase. Increased Dy concentration near the grain boundary is more effective in improving the coercivity, as domain reversal nucleation originates at or near this region.

Localized dissolution of grain boundary T1 precipitates in Al-3Cu-2Li

2015 ◽  
Vol 33 (6) ◽  
pp. 395-401 ◽  
Author(s):  
Ramasis Goswami
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Orientation Relationship ◽  
S Phase ◽  
Dissolution Behavior ◽  
Moist Air ◽  
Orientation Relation ◽  
Transmission Electron ◽  
Relationship Of

AbstractTransmission electron microscopy (TEM) was employed to investigate the dissolution behavior of nanocrystalline grain boundary T1 precipitates in Al-3Cu-2Li. These grain boundary T1 plates exhibit an orientation relation with matrix, with the (1-11)α-Al parallel to (0001)T1 and [022]α-Al parallel to [10-10]T1, which is similar to the orientation relationship of T1 plates formed within grains. TEM studies showed that these grain boundary T1 plates react readily in moist air. As a result of the localized dissolution, the Cu-rich clusters form onto T1, which is consistent with the localized dissolution behavior observed in nanocrystalline S phase in Al-Cu-Mg.

Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

2004 ◽  
Vol 810 ◽  
Author(s):  
H.B. Yao ◽  
D.Z. Chi ◽  
S. Tripathy ◽  
S.Y. Chow ◽  
W.D. Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Surface Morphology ◽  
Morphological Stability ◽  
Triple Junctions ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Segregation Process

ABSTRACTThe germanosilicidation of Ni on strained (001) Si0.8Ge0.2, particularly Ge segregation, grain boundary grooving, and surface morphology, during rapid thermal annealing (RTA) was studied. High-resolution cross-sectional transmission electron microscopy (HRXTEM) suggested that Ge-rich Si1−zGez segregation takes place preferentially at the germanosilicide/Si1−xGex interface, more specifically at the triple junctions between two adjacent NiSi1−uGeu grains and the underlying epi Si1−xGex, and it is accompanied with thermal grooving process. The segregation process accelerates the thermal grooving of NiSi1−uGeu grain boundaries at the interface. The segregation-accelerated grain boundary grooving has significant effect on the surface morphology of NiSi1−uGeu films in Ni-SiGe system.

Sign in / Sign up

Export Citation Format

Share Document