Pinning of Misfit Dislocations in film Growth Studied by Grazing Incidence X-ray Scattering

1991 ◽  
Vol 237 ◽  
Author(s):  
K. S. Liang ◽  
C. H. Lee
Keyword(s):  
Diffuse Scattering ◽  
Film Growth ◽  
Grazing Incidence ◽  
Misfit Dislocations ◽  
X Ray ◽  
X Ray Scattering ◽  
Incommensurate Structures ◽  
Lorentzian Lineshape ◽  
Ray Scattering

ABSTRACTUsing grazing incidence x-ray scattering, we have studied incommensurate structures of Pb adlayers on Cu(110) surface and epitaxial Al films grown on Si(111) surface. Similar diffuse scattering profiles were found in both cases, which can be fitted with a Gaussian-plus-Lorentzian lineshape. The results are attributed to a overlayer structure with pinned misfit dislocations at the interface.

Grazing-incidence small-angle X-ray scattering: new tool for studying thin film growth

1989 ◽  
Vol 22 (6) ◽  
pp. 528-532 ◽  
Author(s):  
J. R. Levine ◽  
J. B. Cohen ◽  
Y. W. Chung ◽  
P. Georgopoulos
Keyword(s):  
Thin Film ◽  
Small Angle ◽  
Film Growth ◽  
Grazing Incidence ◽  
Thin Film Growth ◽  
Synchrotron Source ◽  
X Ray ◽  
X Ray Scattering ◽  
Sampling Statistics ◽  
Ray Scattering

Grazing-incidence small-angle X-ray scattering (GISAXS) is introduced as a method of studying discontinuous thin films. In this method, the incident beam is totally externally reflected from the substrate followed by small-angle scattering of the refracted beam by the thin film. The experiment described establishes the ability of GISAXS to provide size information for islands formed in the initial stages of thin film growth. The data presented are for gold films of 7 and 15 Å average thicknesses on Corning 7059 glass substrates. The advantages of this technique are that it is non-destructive, can be done in situ, provides excellent sampling statistics, does not necessarily require a synchrotron source, and is not limited to thin or conducting substrates.

X-Ray Diffuse Scattering from Misfit Dislocation at Buried Interface

2001 ◽  
Vol 673 ◽  
Author(s):  
Kaile Li ◽  
Paul F. Miceli ◽  
Christian Lavoie ◽  
Tom Tiedje ◽  
Karen L. Kavanagh
Keyword(s):  
Diffuse Scattering ◽  
Present Model ◽  
Misfit Dislocations ◽  
Model Calculations ◽  
X Ray ◽  
High Q ◽  
X Ray Scattering ◽  
Low Dislocation Density ◽  
Good Agreement ◽  
Ray Scattering

ABSTRACTMotivated by x-ray scattering experiments on heteroepitaxially grown thin films, we present model calculations of the diffuse x-ray scattering arising from misfit dislocations. The model is based on the elastic displacements from dislocations whose positions are spatially uncorrelated. These numerical results give support to a phenomenological model [Phys. Rev. B 51, 5506 (1995)] that predicts the scaling of diffuse scattering intensity with perpendicular wavevector, Qz. At low Qz the diffuse width scales inversely with the defect size, which is given by the film thickness due to the effect of the elastic image field, whereas at high Qz the diffuse width is mosaic-like, scaling with Qz. New experimental results for InxGa1−xAs/GaAs are also presented and compared to the model. The calculations are in good agreement with these experiments, as well as other measurements in the literature for high and low dislocation density.

Diffuse X-ray scattering from local chemical inhomogeneities in InGaN layers

2018 ◽  
Vol 51 (4) ◽  
pp. 969-981 ◽  
Author(s):  
Václav Holý ◽  
Marcin Kryśko ◽  
Michał Leszczyński
Keyword(s):  
Diffuse Scattering ◽  
Reciprocal Space ◽  
Space Distribution ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Linear Elasticity Theory ◽  
X Ray ◽  
X Ray Scattering ◽  
Simulation Results ◽  
Ray Scattering

Diffuse X-ray scattering from random chemical inhomogeneities in epitaxial layers of InGaN/GaN was simulated using linear elasticity theory and kinematical X-ray diffraction. The simulation results show the possibility of determining the r.m.s. deviations of the local In content and its lateral correlation length from reciprocal-space maps of the scattered intensity. The reciprocal-space distribution of the intensity scattered from inhomogeneities is typical and it can be distinguished from other sources of diffuse scattering such as threading or misfit dislocations.

Strain Analysis in Thin La1−xCaxMnO3 Films by Grazing Incidence X-ray Scattering

1999 ◽  
Vol 602 ◽  
Author(s):  
M. Petit ◽  
L. J. Martinez-Miranda ◽  
M. Rajeswari ◽  
A. Biswas ◽  
D. J. Kang ◽  
...  
Keyword(s):  
Film Thickness ◽  
Lattice Mismatch ◽  
Compressive Strain ◽  
Strain Analysis ◽  
Grazing Incidence ◽  
Relaxation Processes ◽  
Near Surface ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

AbstractWe have performed depth profile analyses of the lattice parameters in epitaxial thin films of La1−xCaxMno3 (LCMO), where x = 0.33 or 0.3, to understand the evolution of strain relaxation processes in these materials. The analyses were done using Grazing Incidence X-ray Scattering (GIXS) on films of different thicnesses on two different substrates, (100) oriented LaAlO3 (LAO), with a lattice mismatch of ∼2% and (110) oriented NGO, with a lattice mismatch of less than 0.1%. Films grown on LAO can exhibit up to three in-plane strained lattice constants, corresponding to a slight orthorhombic distortion of the crystal, as well as near-surface and columnar lattice relaxation. As a function of film thickness, a crossover from a strained film to a mixture of strained and relaxed regions in the film occurs in the range of 700 Å. The structural evolution at this thickness coincides with a change in the resistivity curve near the metalinsulator transition. The in-plane compressive strain has a range of 0.2 – 1.5%, depending on the film thickness for filsm in the range of 400 - 1500 A.

Evolution of Interfacial Roughness Correlations of Fe Au Films Grown on Mgo(001) Substrates

1996 ◽  
Vol 440 ◽  
Author(s):  
P. C. Chow ◽  
R. Paniago ◽  
R. Forrest ◽  
S. C. Moss ◽  
S. S. P. Parkin ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffuse Scattering ◽  
Perfect Match ◽  
Grazing Incidence ◽  
Interface Roughness ◽  
Metallic Structures ◽  
X Ray ◽  
Dimensional Image ◽  
X Ray Scattering ◽  
Image Plate Detector

AbstractThe growth by sputtering of a series of thin films of Fe/Au on MgO(001) substrates was analyzed using Bragg and diffuse X-ray scattering. The Fe (bcc) layer grows rotated by 45° with respect to the MgO – Au(fcc) (001) epitaxial orientation, resulting in an almost perfect match between the two metallic structures. By collecting the X-ray diffuse scattering under grazing incidence using a 2-dimensional image plate detector, we mapped the reciprocal space of these films. We characterized the correlated interface roughness starting with a buffer of Fe in which only three interfaces are present. The propagation of the roughness was subsequently characterized for Fe/Au multilayers with 40 and 100 bilayers. We observe an enlargement of the surface features as a function of time, evidenced by the longer lateral cutoff length measured for thicker films.

A general model for estimating the ordering of mesoporous film by grazing incidence small angle X-ray scattering

2014 ◽  
Vol 115 (20) ◽  
pp. 204311 ◽  
Author(s):  
Nie Zhao ◽  
Chunming Yang ◽  
Qian Zhang ◽  
Xueming Lu ◽  
Yuzhu Wang ◽  
...  
Keyword(s):  
Small Angle ◽  
General Model ◽  
Grazing Incidence ◽  
X Ray ◽  
X Ray Scattering ◽  
Mesoporous Film ◽  
Ray Scattering

Grazing incidence small angle x-ray scattering from free-standing nanostructures

1999 ◽  
Vol 86 (12) ◽  
pp. 6763-6769 ◽  
Author(s):  
Markus Rauscher ◽  
Rogerio Paniago ◽  
Hartmut Metzger ◽  
Zoltan Kovats ◽  
Jan Domke ◽  
...  
Keyword(s):  
Small Angle ◽  
Grazing Incidence ◽  
Free Standing ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Molecular structure of poly(3-alkyl-thiophenes) investigated by calorimetry and grazing incidence X-ray scattering

2012 ◽  
Vol 97 ◽  
pp. 109-118 ◽  
Author(s):  
Jose Abad ◽  
Nieves Espinosa ◽  
Pilar Ferrer ◽  
Rafael García-Valverde ◽  
Carmen Miguel ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Grazing Incidence ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering
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